ECH8601

Ordering number : ENN7288B ECH8601 N-Channel Silicon MOSFET ECH8601 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Suitable for lithim-ion battery use. Drain common specification. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±12 7 40 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=4A, VGS=4.5V ID=4A, VGS=4.0V ID=4A, VGS=3.1V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 20 1 ±10 0.5 7.7 14 15 17 21 11 17 18 20 24 910 350 170 23 24 30 35 1.3 typ max Unit V µA µA V S mΩ mΩ mΩ mΩ pF pF pF Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : KC Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1504 TS IM TB-00000096 / 22503 TS IM TA-100363 / O1002 TS IM TA-3673 No.7288-1/4 ECH8601 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A IS=7A, VGS=0 Ratings min typ 15 100 61 90 23 1.3 3.4 0.83 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2206B 0.25 Switching Time Test Circuit VIN VDD=10V 0.3 8 5 0.15 4V 0V VIN PW=10µs D.C.≤1% ID=3.5A RL=2.86Ω VOUT D 2.3 2.8 G 0.65 2.9 0.9 0.25 1 4 ECH8601 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 P.G 50Ω S Electrical Connection 8 7 6 5 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view No.7288-2/4 ECH8601 12 11 10 ID -- VDS 3.5V 3.0V 10 ID -- VGS VDS=10V 2.5V 2.0V 1.5V Drain Current, ID -- A 9 8 7 Drain Current, ID -- A 9 8 4.0V 6 5 4 3 2 1 0 0 5 4 3 2 Ta=7 5 --25°C 1.5 7 °C 0 0.5 1.0 6 VGS=1.0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1 0 2.0 IT03627 Drain-to-Source Voltage, VDS -- V 50 45 40 35 30 IT03626 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 40 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 35 30 25 2A I D= , =2. V GS 5V 4A 25 20 15 10 0 2 4 6 8 10 IT03628 ID=2A 20 I D= =4.0 VGS 4A, V 15 10 --50 --25 0 25 50 75 100 25°C 125 150 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID Ambient Temperature, Ta -- °C 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT03629 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S VDS=10V 3 2 Forward Current, IF -- A Ta= 7 7 5 3 2 = Ta °C C 75 25° 1.0 0.1 2 3 5 7 0.1 2 3 5 7 10 2 3 0.01 7 5 3 2 0.001 0.3 0.4 0.5 0.6 0.7 --25 ° 0.8 0.9 5 --2 25° °C C C 10 5°C 1.0 1.1 1.2 Drain Current, ID -- A 5 3 IT03630 3 2 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT03631 VDD=10V VGS=4V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 1000 7 5 Ciss 100 7 5 3 2 td(off) tf Coss 3 2 tr td(on) Crss 100 7 5 10 7 0.1 2 3 5 7 1.0 2 3 5 7 2 10 IT03632 0 2 4 6 8 10 12 14 16 18 20 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V IT03633 No.7288-3/4 ECH8601 10 9 VGS -- Qg VDS=10V ID=3.5A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1.5 1 0 0 5 10 15 20 25 IT03634 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=40A ID=7A