ECH8603

Ordering number : ENN7218B ECH8603 P-Channel Silicon MOSFET ECH8603 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --20 ±10 --4 --40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=±8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-2A ID=--2A, VGS=-4.5V ID=--1A, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --20 --1 ±10 --0.4 4.9 7 37 58 800 210 160 17 197 88 128 54 87 --1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : JC Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13105PE TS IM / 32003 TS IM / 72602 TS IM TA-3570 No.7218-1/4 ECH8603 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--10V, VGS=-10V, ID=--4A VDS=--10V, VGS=-10V, ID=--4A VDS=--10V, VGS=-10V, ID=--4A IS=--4A, VGS=0 Ratings min typ 21 1.4 3.2 --0.82 --1.2 max Unit nC nC nC V Package Dimensions unit : mm 2206B 0.25 Electrical Connection 8 0.3 8 5 0.15 7 6 5 0.65 2.9 0.25 1 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 2.3 2.8 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Switching Time Test Circuit VIN 0V --4.5V VIN PW=10µs D.C.≤1% ID= --4A RL=2.5Ω VDD= --10V 0.07 0.9 D VOUT G ECH8603 P.G 50Ω S No.7218-2/4 ECH8603 --3.5V --3.0V --2.5 V --1 .5 V --5.0 --4.5 --4.0 ID -- VDS --2.0 V --10 --9 --8 ID -- VGS VDS= --10V Drain Current, ID -- A Drain Current, ID -- A --4.0V --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --7 --6 --5 --4 --3 --2 --1 VGS= --1.0V --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 5 °C 25 --25° °C C --1.4 --1.6 --1.8 Ta =7 --2.0 Drain-to-Source Voltage, VDS -- V 70 IT04367 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 90 IT04368 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 80 --1A 50 70 ID= --2A 60 --2A I D= 2.5 = -GS ,V V 40 50 30 40 = --4 , VGS --1A I D= .5V 20 30 20 --60 10 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 5 IT04369 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 yfs -- ID Ambient Temperature, Ta -- °C IT04370 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S VDS= --10V 3 2 5 3 2 Ta= 75° C 25° C 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 IT04371 --0.01 7 5 3 2 --0.001 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --25 ° --0.8 --0.9 -- Ta =7 25° 7 C 25° 5°C 10 Forward Current, IF -- A C C --1.0 --1.1 --1.2 Drain Current, ID -- A 5 3 Diode Forward Voltage, VSD -- V 3 IT04372 SW Time -- ID VDD= --10V VGS= --4.5V Ciss, Coss, Crss -- VDS f=1MHz 2 Switching Time, SW Time -- ns 2 Ciss, Coss, Crss -- pF td(off) 100 7 5 3 2 1000 7 5 Ciss tf tr 3 2 td(on) Coss Crss 10 7 --0.1 2 3 5 7 --1.0 2 3 5 7 100 7 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A IT04373 Drain-to-Source Voltage, VDS -- V IT04374 No.7218-3/4 ECH8603 --10 --9 VGS -- Qg VDS= --10V ID= --4A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 16 18 20 22 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --40A 1m