ECH8608

Ordering number : ENN8179 ECH8608 N-Channel and P-Channel Silicon MOSFETs ECH8608 Features • General-Purpose Switching Device Applications • The ECH8608 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions N-channel 20 ±10 6 40 1.3 1.5 150 --55 to +150 P-channel -20 ±10 --4 -40 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=4V ID=1.5A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 20 1 ±10 0.5 7 10 22 30 780 300 150 30 44 1.3 V µA µA V S mΩ mΩ pF pF pF Symbol Conditions Ratings min typ max Unit Marking : FA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11205PE TS IM TB-00001088 No.8179-1/6 ECH8608 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGS=±8V, VDS=0 VDS=--10V, ID=-1mA VDS=--10V, ID=-2A ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--4A VDS=--10V, VGS=-10V, ID=--4A VDS=--10V, VGS=-10V, ID=--4A IS=--4A, VGS=0 --0.4 4.9 7 37 58 800 210 160 17 197 88 128 21 1.4 3.2 --0.82 --1.2 54 87 --20 --1 ±10 --1.3 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A IS=6A, VGS=0 Ratings min typ 19 134 90 94 23 1.6 3.6 0.84 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2206B 0.25 0.3 8 5 0.15 Electrical Connection 8 7 6 5 0.65 2.9 0.25 1 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 2.3 2.8 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 0.07 0.9 No.8179-2/6 ECH8608 Switching Time Test Circuit [N-channel] [P-channel] VIN 4V 0V VIN PW=10µs D.C.≤1% VDD=10V 0V --4.5V ID=3A RL=3.3Ω VIN VDD= --10V VIN PW=10µs D.C.≤1% ID= --4A RL=2.5Ω D VOUT D VOUT G G ECH8608 P.G 50Ω ECH8608 P.G 50Ω S S --3.5V --3.0V --2.5 V 10 ID -- VDS 3.0V [Nch] --5.0 --4.5 ID -- VDS --2.0 V --1 .5 V [Pch] 9 8 4.0V 2.0V 2.5 V --4.0 Drain Current, ID -- A Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 1.5V --4.0V VGS= --1.0V VGS=1.0V Drain-to-Source Voltage, VDS -- V IT04385 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 10 9 8 ID -- VGS Drain-to-Source Voltage, VDS -- V --10 --9 --8 IT04367 [Nch] VDS= --10V ID -- VGS [Pch] VDS=10V Drain Current, ID -- A Drain Current, ID -- A 7 6 5 4 --7 --6 --5 --4 --3 --2 --1 5°C --25°C Ta= 7 3 2 1 0 0 0.5 1.0 25° 1.5 2.0 IT04386 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 25 --1.6 75 °C --25 °C °C --1.8 C Ta = --2.0 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V IT04368 No.8179-3/6 ECH8608 70 RDS(on) -- VGS [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 RDS(on) -- VGS [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 60 --2A 50 50 1.5A 40 ID=3A ID= --1A 40 30 30 20 10 0 0 2 4 6 8 10 IT04387 20 10 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Gate-to-Source Voltage, VGS -- V 50 Gate-to-Source Voltage, VGS -- V 90 IT04369 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 45 40 35 30 25 20 15 10 5 0 --50 --25 0 25 50 75 100 125 150 80 , VG 1.5A I D= 2.5 S= V 70 I D= =4.0V 3A, V GS 60 -I D= 1A , = -V GS 2.5 V 50 40 = --4 , VGS --2A I D= .5V 30 20 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 5 IT04388 yfs -- ID Ambient Temperature, Ta -- °C 5 IT04370 Forward Transfer Admittance, yfs -- S Forward Transfer Admittance, yfs -- S [Nch] VDS=10V yfs -- ID [Pch] VDS= --10V 3 2 3 2 10 7 5 3 2 °C --25 Ta= C 75° 10 7 5 3 2 2 5°C Ta= --25 °C C C 25° 75° 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 IT04389 2 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 IT04371 Drain Current, ID -- A 3 2 10 7 5 3 2 Drain Current, ID -- A 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IF -- VSD [Nch] VGS=0 IF -- VSD [Pch] VGS=0 Forward Current, IF -- A °C 25° C --25 °C 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 --0.01 7 5 3 2 --0.001 --0.2 --0.3 --0.4 --0.5 --0.6 25° C --25 °C --0.7 --0.8 --0.9 Ta= 75 Ta = 1.0 7 5 3 2 Forward Current, IF -- A 75 °C --1.0 --1.1 --1.2 Diode Forward Voltage, VSD -- V IT04390 Diode Forward Voltage, VSD -- V IT04372 No.8179-4/6 ECH8608 7 5 SW Time -- ID [Nch] VDD=10V VGS=4V 5 3 SW Time -- ID [Pch] VDD= --10V VGS= --4.5V Switching Time, SW Time -- ns 3 2 Switching Time, SW Time -- ns 2 td(off) 100 7 5 3 2 100 7 5 3 2 td(off) tf tr tf tr td(on) td(on) 10 10 0.1 2 3 5 7 1.0 2 3 5 10 IT04391 7 7 --0.1 2 3 5 7 --1.0 2 3 5 7 Drain Current, ID -- A 3 2 Drain Current, ID -- A 3 2 IT04373 Ciss, Coss, Crss -- VDS [Nch] f=1MHz Ciss, Coss, Crss -- VDS [Pch] f=1MHz Ciss, Coss, Crss -- pF Ciss Ciss, Coss, Crss -- pF 1000 7 5 3 2 1000 7 5 Ciss Coss Crss 3 2 Coss Crss 100 7 5 0 2 4 6 8 10 12 14 16 18 20 100 7 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain-to-Source Voltage, VDS -- V 10 9 IT04392 Drain-to-Source Voltage, VDS -- V --10 --9 IT04374 VGS -- Qg VDS=10V ID=6A [Nch] VDS= --10V ID= --4A VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 IT04393 Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 16 18 20 22 Total Gate Charge, Qg -- nC 100 7 5 3 2 Total Gate Charge, Qg -- nC --100 7 5 3 2 IT04375 ASO IDP=40A [Nch]