ECH8616

Ordering number : ENN8191 ECH8616 N-Channel Silicon MOSFET ECH8616 Features • • • General-Purpose Switching Device Applications Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 60 ±20 3 20 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=10V ID=0.5A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 60 1 ±10 1.2 2.2 3.8 70 92 560 60 41 11 11 61 32 93 133 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : FJ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12505PE TS IM TB-00001009 No.8191-1/4 ECH8616 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=30V, VGS=10V, ID=3A VDS=30V, VGS=10V, ID=3A VDS=30V, VGS=10V, ID=3A IS=3A, VGS=0 Ratings min typ 12.8 2.1 2.7 0.81 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2206B 0.25 Electrical Connection 8 0.3 8 5 0.15 7 6 5 0.65 2.9 0.25 1 4 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 2.3 2.8 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Switching Time Test Circuit VIN 10V 0V VIN PW=10µs D.C.≤1% ID=1.5A RL=20Ω VDD=30V 0.07 0.9 D VOUT G ECH8616 P.G 50Ω S No.8191-2/4 ECH8616 3 ID -- VDS 10V 8.0V 6.0 V 3.0 ID -- VGS VDS=10V 4.0 V 3.0V Drain Current, ID -- A 2.5 Drain Current, ID -- A 2 2.0 5.0 V 1.5 1 1.0 VGS=2.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.5 0 0 0.5 1.0 1.5 2.0 2.5 25 3.0 °C --2 5 °C Ta= 75 ° C 3.5 IT08980 Drain-to-Source Voltage, VDS -- V 200 IT08979 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 200 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 160 180 160 140 120 100 80 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 ID=0.5A 140 1.5A 120 100 80 60 40 0 2 4 6 8 10 IT08981 I D= , VG 0.5A 1.5A I D= 4V S= V =10 , VGS Gate-to-Source Voltage, VGS -- V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 yfs -- ID Ambient Temperature, Ta -- °C 10 7 5 3 2 IT08982 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S VDS=10V Forward Current, IF -- A = Ta --2 C 5° °C 75 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Drain Current, ID -- A 1000 7 5 5 7 10 IT08983 0.001 0.2 SW Time -- ID VDD=30V VGS=10V Ciss, Coss, Crss -- pF 3 2 1000 7 5 3 2 100 7 5 3 2 10 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V --25 ° 2 C 5° Ta= 75° C 25° C C IT08984 Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08985 Ciss td(off) tf td(on) tr Coss Crss 0 5 10 15 20 25 30 IT08986 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No.8191-3/4 ECH8616 10 9 VGS -- Qg VDS=30V ID=3A Drain Current, ID -- A 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=20A