ECH8617

Ordering number : ENA0297 ECH8617 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8617 Features • • • General-Purpose Switching Device Applications Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --100 ± 20 --1.5 --12 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-100V, VGS=0V VGS=± 16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=--1A ID=--1A, VGS=-10V ID=--0.5A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --100 --1 ± 10 --1.2 1.8 3.1 400 460 630 41 38 10.0 5.5 91 27 520 645 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : FK Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 12506PE MS IM TB-00001932 No. A0297-1/4 ECH8617 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--50V, VGS=-10V, ID=-1.5A VDS=--50V, VGS=-10V, ID=-1.5A VDS=--50V, VGS=-10V, ID=-1.5A IS=--1.5A, VGS=0V Ratings min typ 14.7 1.6 2.8 --0.80 --1.2 max Unit nC nC nC V Package Dimensions unit : mm 7011A-001 Top View 0.25 Electrical Connection 8 7 6 5 2.9 0.15 8 5 0 to 0.02 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 2.8 2.3 0.25 1 0.65 4 0.3 Top view 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bottom View 0.07 SANYO : ECH8 Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% VDD= --50V ID= --1A RL=50Ω VOUT D G P.G 50Ω ECH8617 S No. A0297-2/4 ECH8617 --1.5 ID -- VDS 0V --3.0 ID -- VGS VDS= --10V --1 5.0 -V 10 .0V --6 .0V --5 . --1.2 -- . --3 .0V 4 0V --2.5 Drain Current, ID -- A --0.9 --2.5V V GS= Drain Current, ID -- A --2.0 --1.5 --0.6 --1.0 Ta= 75° C 0 --0.5 --1.0 --1.5 --2.0 --0.3 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --2.5 25° --25 °C C --3.0 --3.5 IT10610 Drain-to-Source Voltage, VDS -- V 1000 IT10609 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 1000 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 900 800 900 800 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 --1A 700 600 500 400 300 200 100 0 0 ID= --0.5A -0. =ID 5A ,V V --4 S= G --1. I D= 0A , = -V GS 10V --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V IT10611 10 yfs -- ID Ambient Temperature, Ta -- °C 7 5 3 2 IT10612 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --10V 5 °C --0.4 7 5 3 2 --0.01 7 5 3 2 --0.6 --0.8 --1.0 --1.2 IT10614 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --0.001 --0.2 IT10613 2 1000 7 5 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD= --50V VGS= --10V Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 1.0 --0.01 2 3 57 td(off) Ciss, Coss, Crss -- pF 3 2 1000 7 5 3 2 tf td(on) 100 7 5 3 2 tr Ta= 7 0 --5 --10 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 25° 1.0 = Ta --0.1 7 5 3 2 C --25° C Coss Crss --15 --20 --25 --30 IT10616 --2 5° C °C 75 °C 25 3 57 IT10615 Source Current, IS -- A --1.0 7 5 3 2 Drain-to-Source Voltage, VDS -- V No. A0297-3/4 ECH8617 --10 --9 Gate-to-Source Voltage, VGS -- V VGS -- Qg VDS= --50V ID= --1.5A Drain Current, ID -- A 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --12A ≤10µs --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IT10617 10 1m ID= --1.5A 10 0µ s s DC op 10 ms era 0m tio s Operation in this area is limited by RDS(on). n( Ta = 25 °C ) --0.01 --0.1 Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Total Gate Charge, Qg -- nC 1.8 PD -- Ta Mounted on a ceramic board (900mm2!0.8mm) Drain-to-Source Voltage, VDS -- V IT10618 Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 To t al Di ss 1u ip nit ati on 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT10619 Note on usage : Since the ECH8617 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No. A0297-4/4