ECH8619

Ordering number : ENA0658 ECH8619 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8619 Features • General-Purpose Switching Device Applications • The ECH8619 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 60 ±20 3 20 1.3 1.5 150 --55 to +150 P-channel -60 ±20 --2 -20 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=10V ID=0.5A, VGS=4V 60 1 ±10 1.2 2.2 3.8 70 92 93 133 2.6 V µA µA V S mΩ mΩ Symbol Conditions Ratings min typ max Unit Marking : FM Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22107PE TI IM TC-00000521 No. A0658-1/6 ECH8619 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1A ID=--1A, VGS=--10V ID=--0.5A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--30V, VGS=-10V, ID=--2A VDS=--30V, VGS=-10V, ID=--2A VDS=--30V, VGS=-10V, ID=--2A IS=--2A, VGS=0V --60 --1 ±10 --1.2 2.1 3.5 160 210 660 54 42 10.5 7.0 93 30 15 2.1 2.7 --0.82 --1.2 210 295 --2.6 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=3A VDS=30V, VGS=10V, ID=3A VDS=30V, VGS=10V, ID=3A IS=3A, VGS=0V Ratings min typ 560 60 41 11 11 61 32 12.8 2.1 2.7 0.81 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7011A-001 Electrical Connection 8 Top View 0.25 7 6 5 2.9 0.15 8 5 0 to 0.02 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 2.8 2.3 1 1 0.65 2 3 4 4 0.3 0.9 0.25 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bottom View 0.07 SANYO : ECH8 No. A0658-2/6 ECH8619 Switching Time Test Circuit [N-channel] [P-channel] VIN 0V --10V VIN ID= --1A RL=30Ω VDD= --30V VIN 10V 0V VIN VDD=30V ID=1.5A RL=20Ω D PW=10µs D.C.≤1% VOUT D PW=10µs D.C.≤1% VOUT G G ECH8619 P.G 50Ω ECH8619 P.G 50Ω S S 10V 8.0V 3.0V Drain Current, ID -- A Drain Current, ID -- A 2 5.0 V --1.0 --15 .0V --6 . --1.5 --5. 0V 0V -4.0 V --3 .0V 3 ID -- VDS V 6.0 [Nch] --2.0 ID -- VDS --10. 0V [Pch] 4.0 V VGS= --2.5V 1 --0.5 VGS=2.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V 3.0 IT08979 ID -- VGS Drain-to-Source Voltage, VDS -- V --4 IT10644 [Nch] ID -- VGS [Pch] VDS=10V VDS= --10V 2.5 Drain Current, ID -- A 2.0 Drain Current, ID -- A --3 1.5 --2 1.0 Ta= 75° C 0 --0.5 --1.0 --1.5 --2.0 0.5 Ta= 7 5°C --1 0 0 0.5 1.0 1.5 2.0 25 0 3.0 3.5 IT08980 --2.5 --3.0 --3.5 IT10645 2.5 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V 25° --25 C °C No. A0658-3/6 °C --2 5°C ECH8619 200 RDS(on) -- VGS [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 450 400 350 300 250 200 150 100 50 0 RDS(on) -- VGS [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 160 --1A ID=0.5A 140 1.5A 120 100 80 60 40 0 2 4 6 8 10 IT08981 ID= --0.5A 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V 200 Gate-to-Source Voltage, VGS -- V 450 IT10646 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 160 140 120 100 80 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 400 350 300 250 200 150 100 50 0 --60 4V S= A, VG V 0.5 =10 I D= VGS 5A, 1. I D= 4V = -V GS , 0V 5A --0. = --1 VGS I D= A, --1.0 I D= --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 IT08982 Ambient Temperature, Ta -- °C 10 IT10647 yfs -- ID VDS=10V [Nch] Forward Transfer Admittance, yfs -- S yfs -- ID VDS= --10V [Pch] Forward Transfer Admittance, yfs -- S 7 5 3 2 = Ta --2 C 5° °C 75 1.0 7 5 3 2 = Ta C 5° --2 25 25 °C 75 C ° °C Drain Current, ID -- A 10 7 5 3 2 5 7 10 IT08983 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 IS -- VSD Drain Current, ID -- A 7 5 3 2 IT10648 [Nch] IS -- VSD [Pch] VGS=0V VGS=0V Source Current, IS -- A Source Current, IS -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 --1.0 7 5 3 2 Ta= 75° C Ta= 75° C 25° C --25 °C --0.1 7 5 3 2 25° C --0.01 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 IT10649 0.001 0.2 --0.001 --0.2 Diode Forward Voltage, VSD -- V IT08984 Diode Forward Voltage, VSD -- V --25° C No. A0658-4/6 ECH8619 1000 7 5 SW Time -- ID [Nch] VDD=30V VGS=10V 1000 7 5 SW Time -- ID [Pch] VDD= --30V VGS= --10V Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08985 Switching Time, SW Time -- ns 3 2 100 7 5 3 2 td(off) tf td(on) td(off) tf td(on) tr 10 7 5 3 2 1.0 --0.01 2 3 5 7 --0.1 tr 2 3 5 7 --1.0 2 3 57 IT10650 3 2 1000 Ciss, Coss, Crss -- VDS Drain Current, ID -- A [Nch] f=1MHz 2 Ciss, Coss, Crss -- VDS Drain Current, ID -- A [Pch] f=1MHz 1000 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 7 5 3 2 100 7 5 3 2 10 0 5 10 Ciss 7 5 3 2 Ciss Coss Crss 100 7 5 3 2 Coss Crss 15 20 25 30 IT08986 0 --5 --10 --15 --20 --25 --30 IT10651 Drain-to-Source Voltage, VDS -- V 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V --10 --9 [Nch] VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Gate-to-Source Voltage, VGS -- V VDS=30V ID=3A VDS= --30V ID= --2A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IT10652 Total Gate Charge, Qg -- nC 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT08987 Total Gate Charge, Qg -- nC 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP=20A 10 [Nch] ASO IDP= --20A [Pch] PW≤10µs 0 1m µs s PW≤10µs 10 Drain Current, ID -- A ID=3A m s 10 op 0m er s ati on (T a= 25 Operation in this °C area is limited by RDS(on). ) 10 Drain Current, ID -- A 1m s ID= --2A 10 0µ s DC DC op 10 era tio ms 0m s 25 n( Operation in this area is limited by RDS(on). Ta = °C ) 0.01 0.01 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Drain-to-Source Voltage, VDS -- V 5 7 100 IT08988 --0.01 --0.1 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT10653 No. A0658-5/6 ECH8619 1.8 PD -- Ta Mounted on a ceramic board [Nch / Pch] (900mm2✕0.8mm) Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 To t al di ss 1u ip nit ati on 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT10654 Note on usage : Since the ECH8619 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. PS No. A0658-6/6