ECH8656

Ordering number : EN9010 ECH8656 SANYO Semiconductors DATA SHEET ECH8656 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications • • ON-resistance RDS(on)1=13mΩ (typ.) Halogen free compliance Protection diode in 1.8V drive Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 20 ±10 7.5 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7011A-001 Product & Package Information • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 Packing Type : TL Marking TB TL LOT No. 0.25 1 0.65 4 0.3 Electrical Connection 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bot t om View 0.07 0.9 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 83111PE TKIM TC-00002622 No.9010-1/4 ECH8656 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Static Drain-to-Source On-State Resistance RDS(on)3 RDS(on)4 RDS(on)5 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A ID=4A, VGS=4.5V ID=4A, VGS=4.0V ID=4A, VGS=3.1V ID=2A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4.5V, ID=7.5A VDS=10V, VGS=4.5V, ID=7.5A VDS=10V, VGS=4.5V, ID=7.5A IS=7.5A, VGS=0V 9 9.4 11 12.5 17 Ratings min 20 1 ±10 0.5 7 13 13.5 16 18 30 1060 180 135 17.5 120 68 80 10.8 2.1 2.9 0.74 1.2 17 18 22 26 48 1.3 typ max Unit V μA μA V S mΩ mΩ mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN VDD=10V 4V 0V VIN PW=10μs D.C.≤1% G D ID=4A RL=2.5Ω VOUT P.G ECH8656 50Ω S 7.5 ID -- VDS 2.5V 10 9 8 ID -- VGS VDS=10V 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Drain Current, ID -- A 6.0V 4.0V 2.0 7.0 V Drain Current, ID -- A 3.0V 7 6 5 4 3 2 1 8.0V 1.8V VGS=1.5V Ta=75 °C 0 0.5 1.0 0 0.1 0.2 0.3 0.4 0.5 IT16586 0 25°C 1.5 --25°C 2.0 2.5 IT12484 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V No.9010-2/4 ECH8656 40 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 40 35 30 25 20 15 10 5 0 --75 RDS(on) -- Ta =0.5 V, I D =1.8 VGS A =4.0 , ID 3.1V A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 35 30 ID=0.5A 25 20 15 10 5 0 2.0A 4.0A = VGS 2.0 , I D= 2.5V = VGS A =4.0 , ID 4.0V = VGS A 4.0A , I D= =4.5V VGS 0 2 4 6 8 10 IT16587 --50 --25 0 25 50 75 100 125 150 175 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 IT16588 IS -- VSD Forward Transfer Admittance, | yfs | -- S 7 5 VDS=10V VGS=0V 2 = Ta --2 75 °C 1.0 7 5 3 2 0.1 0.01 0.1 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 1000 7 SW Time -- ID 5 7 10 IT12487 0 0.1 0.2 0.3 Ta=7 5°C 25°C --25°C 0.4 0.5 0.6 °C 25 Source Current, IS -- A 3 C 5° 2 0.7 0.8 0.9 1.0 Switching Time, SW Time -- ns 5 3 2 VDD=10V VGS=4V Ciss, Coss, Crss -- pF 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT12488 f=1MHz Ciss 1000 7 5 3 2 100 7 5 3 2 10 0.1 td(off) tf tr td(on) Coss Crss 100 7 2 3 5 7 1.0 2 3 5 7 5 10 0 2 4 6 8 10 12 14 16 18 20 Drain Current, ID -- A 4.5 4.0 3.5 VGS -- Qg IT12489 100 7 5 3 2 Drain-to-Source Voltage, VDS -- V ASO IT12490 Gate-to-Source Voltage, VGS -- V VDS=10V ID=7.5A Drain Current, ID -- A IDP=40A (PW≤10μs) 1m 100 μs s 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=7.5A DC op 10 10 er ati on 0m ms s (T a= Operation in this area is limited by RDS(on). 25 °C ) 0.01 0.01 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Total Gate Charge, Qg -- nC IT12491 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16507 No.9010-3/4 ECH8656 1.6 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) Allowable Power Dissipation, PD -- W 1.5 1.4 1.3 1.2 1.0 0.8 To t 1u al t di ss ip 0.6 0.4 0.2 0 ni at io n 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16508 Note on usage : Since the ECH8656 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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