ECH8660_10

Ordering number : ENA1358A ECH8660 SANYO Semiconductors DATA SHEET ECH8660 Features • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm) Conditions N-channel 30 ±20 4.5 30 1.3 1.5 150 --55 to +150 P-channel --30 ±20 --4.5 --30 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 30 1 ±10 2.6 V μA μA V Symbol Conditions Ratings min typ max Unit Marking : TF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/6 ECH8660 Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--2A ID=--2A, VGS=--10V ID=--1A, VGS=--4.5V ID=--1A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=--4.5A VDS=--10V, VGS=--10V, ID=--4.5A VDS=--10V, VGS=--10V, ID=--4.5A IS=--4.5A, VGS=0V --1.2 2.5 4.2 45 71 82 430 105 75 7.5 26 45 35 10 2.0 2.5 --0.85 --1.2 59 100 115 --30 --1 ±10 --2.3 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=2A ID=2A, VGS=10V ID=1A, VGS=4.5V ID=1A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=4.5A VDS=10V, VGS=10V, ID=4.5A VDS=10V, VGS=10V, ID=4.5A IS=4.5A, VGS=0V Ratings min 1 typ 1.66 45 85 110 240 45 30 6.2 11 17 7.5 4.4 1.1 0.64 0.84 1.2 59 119 155 max Unit S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V No. A1358-2/6 ECH8660 Package Dimensions unit : mm (typ) 7011A-001 Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 Electrical Connection 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view 0.25 1 0.65 4 0.3 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bot t om View 0.07 SANYO : ECH8 Switching Time Test Circuit [N-channel] 10V 0V VIN VDD=15V [P-channel] 0V --10V VIN VDD= --15V VIN PW=10μs D.C.≤1% G D ID=2A RL=7.5Ω VOUT PW=10μs D.C.≤1% VIN D ID= --2A RL=7.5Ω VOUT G P.G ECH8660 50Ω S P.G ECH8660 50Ω S 15.0V 10.0V 6.0V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 ID -- VDS V 4.5 4.0 V [Nch] 6 ID -- VGS [Nch] VDS=10V 5 Drain Current, ID -- A Drain Current, ID -- A 4 3.5V 3 5°C Ta= 7 0 1 2 3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 25° C VGS=3.0V 1 --25° 2 C 4 5 IT14211 Drain-to-Source Voltage, VDS -- V IT14210 Gate-to-Source Voltage, VGS -- V No. A1358-3/6 ECH8660 240 RDS(on) -- VGS ID=1A [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 2A 160 160 120 120 1A , I D= =4.0V VGS =1A V, I D =4.5 VGS 10.0 V GS= =2A V, I D 80 80 40 40 0 0 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 5 | yfs | -- ID IT16223 Ambient Temperature, Ta -- °C 7 5 3 2 [Nch] VDS=10V IS -- VSD IT14213 [Nch] VGS=0V Forward Transfer Admittance, | yfs | -- S 3 Source Current, IS -- A 2 1.0 7 5 2 0.1 7 5 3 2 2 3 2 C 5° 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT14214 0.01 0.2 0.4 Ta= 7 0.6 --25° C 0.8 25°C 5°C = Ta C 5° --2 °C 75 1.0 7 5 3 1.0 1.2 IT14215 Drain Current, ID -- A 7 5 SW Time -- ID [Nch] VDD=15V VGS=10V 5 3 2 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V [Nch] f=1MHz Switching Time, SW Time -- ns 3 2 td(off) Ciss, Coss, Crss -- pF 100 7 5 3 2 10 7 5 3 2 tf tr td(on) Coss Crss 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 10 0 5 10 15 20 25 30 IT14217 Drain Current, ID -- A 10 9 VGS -- Qg IT14216 Drain-to-Source Voltage, VDS -- V 7 5 3 2 [Nch] ASO [Nch] PW≤10μs 10 0μ 1m s s 10 ms 10 0m s Gate-to-Source Voltage, VGS -- V VDS=10V ID=4.5A Drain Current, ID -- A IDP=30A 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 IT14218 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=4.5A DC op era Operation in this area is limited by RDS(on). tio n( Ta = 25 °C ) 0.01 0.1 Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V IT14195 No. A1358-4/6 ECH8660 --4. 5V --4. 0V --3 .5V --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 ID -- VDS --10.0V [Pch] --6 ID -- VGS VDS= --10V [Pch] --5 Drain Current, ID -- A --6. 0V --3.0V Drain Current, ID -- A --4 --3 --2 VGS= --2.5V --1 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 Ta= 75°C --25° 25° C C --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 180 RDS(on) -- VGS IT14186 Gate-to-Source Voltage, VGS -- V 160 [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta IT14187 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 160 140 120 100 80 60 40 20 0 0 ID= --1A --2A 140 120 100 80 60 40 20 0 --60 --1A I D= .0V, = --4 A VGS = --1 V, I D --4.5 = VGS = --2A .0V, I D = --10 V GS --2 --4 --6 --8 --10 --12 --14 --16 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 2 | yfs | -- ID IT16224 Ambient Temperature, Ta -- °C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 [Pch] IS -- VSD IT14189 [Pch] VGS=0V Forward Transfer Admittance, | yfs | -- S 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 VDS= --10V Ta -25 =° 25 °C 7 C 5° C Source Current, IS -- A 25°C 0.01 7 --0.001 2 3 57 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 23 Drain Current, ID -- A 100 7 SW Time -- ID td(off) 5 7--10 IT14190 --0.01 --0.2 --0.4 Ta=7 5° --0.6 --25°C --0.8 C --1.0 --1.2 IT14191 [Pch] VDD= --15V VGS= --10V 1000 7 5 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Pch] f=1MHz Switching Time, SW Time -- ns 5 Ciss tf 3 2 Ciss, Coss, Crss -- pF 3 2 tr 10 7 5 3 --0.1 100 7 5 3 Coss Crss td(on) 2 3 5 7 --1.0 2 3 5 7 --10 0 --5 --10 --15 --20 --25 --30 IT14193 Drain Current, ID -- A IT14192 Drain-to-Source Voltage, VDS -- V No. A1358-5/6 ECH8660 --10 --9 VGS -- Qg VDS= --10V ID= --4.5A [Pch] Gate-to-Source Voltage, VGS -- V 7 5 3 2 ASO IDP= --30A 10 0μ 1m s s [Pch] PW≤10μs --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11 Drain Current, ID -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --4.5A 10 ms DC op 10 era 0m s Operation in this area is limited by RDS(on). tio n( Ta = 25 °C ) --0.01 --0.1 Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg -- nC 1.8 PD -- Ta IT14194 Drain-to-Source Voltage, VDS -- V IT14196 [Nch/Pch] Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 When mounted on ceramic substrate (1200mm2×0.8mm) To t al Di 1u ss nit ip ati on 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT14197 Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2010. Specifications and information herein are subject to change without notice. PS No. A1358-6/6