ECH8661

Ordering number : ENA1777 ECH8661 SANYO Semiconductors DATA SHEET ECH8661 Features • • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions N-channel 30 ±20 7 40 1.3 1.5 150 --55 to +150 P-channel --30 ±20 --5.5 --40 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7011A-001 Top View 0.25 2.9 0.15 8 5 0 to 0.02 2.8 2.3 Product & Package Information • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TG TL LOT No. 0.25 1 0.65 4 0.3 Electrical Connection 8 7 6 5 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bottom View 0.07 SANYO : ECH8 1 2 3 4 http://semicon.sanyo.com/en/network 72110PE TK IM TC-00002431 No. A1777-1/6 ECH8661 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--2.5A ID=--2.5A, VGS=--10V ID=--1.5A, VGS=--4.5V ID=--1.5A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--5.5A VDS=--15V, VGS=--10V, ID=--5.5A VDS=--15V, VGS=--10V, ID=--5.5A IS=--5.5A, VGS=0V --1.2 5.2 30 55 58 600 145 110 7.2 23 63 42 13 1.8 3.2 --0.82 --1.2 39 77 82 --30 --1 ±10 --2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=3.5A, VGS=10V ID=2A, VGS=4.5V ID=2A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=15V, VGS=10V, ID=7A VDS=15V, VGS=10V, ID=7A VDS=15V, VGS=10V, ID=7A IS=7A, VGS=0V 30 1 ±10 1.2 3.7 18 29 39 710 120 72 10 25 43 25 11.8 2.4 2.0 0.79 1.2 24 41 55 2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit No. A1777-2/6 ECH8661 Switching Time Test Circuit [N-channel] 10V 0V VIN VDD=15V [P-channel] 0V --10V VIN VDD= --15V VIN PW=10μs D.C.≤1% G D ID=3.5A RL=4.3Ω VOUT PW=10μs D.C.≤1% VIN D ID= --2.5A RL=6Ω VOUT G P.G ECH8661 50Ω S P.G ECH8661 50Ω S 16.0V 10.0V 8.0V 6.0V 4.5V 4.0V 7 6 ID -- VDS 3.5 V [Nch] 14 13 12 11 ID -- VGS [Nch] VDS=10V Drain Current, ID -- A 5 4 3 2 1 0 Drain Current, ID -- A 10 9 8 7 6 4 3 2 1 0 5 VGS=3.0V 0 0.2 0.4 0.6 0.8 1.0 IT13723 0 0.5 1.0 1.5 2.0 2.5 3.0 25°C --25 ° 3.5 4.0 Ta= 7 5°C C 4.5 5.0 Drain-to-Source Voltage, VDS -- V 80 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 70 [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta IT13724 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 60 50 40 30 20 10 0 60 50 40 30 20 10 0 --60 ID=2A 3.5A A I =2.0 4.0V, D S= VG 2.0A ,I = 4.5V D = VGS =3.5A V, I D =10.0 V GS 0 2 4 6 8 10 12 14 16 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT13725 Ambient Temperature, Ta -- °C IT13726 No. A1777-3/6 ECH8661 10 | yfs | -- ID [Nch] VDS=10V Forward Transfer Admittance, | yfs | -- S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IS -- VSD [Nch] VGS=0V 2 1.0 7 5 3 2 0.1 7 0.01 C 5° --2 = °C Ta 75 °C 25 Source Current, IS -- A 3 Ta =7 5°C 25° C 0.6 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 100 7 SW Time -- ID td(off) 5 7 10 2 IT13727 0.01 0.3 0.4 0.5 --25 0.7 0.8 °C 0.9 1.0 IT13728 [Nch] 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Nch] f=1MHz Switching Time, SW Time -- ns 5 3 2 1000 Ciss, Coss, Crss -- pF 7 5 3 2 Ciss tf tr 10 7 5 3 2 0.1 2 3 td(on) 100 7 Coss Crss VDD=15V VGS=10V 5 7 1.0 2 3 5 7 10 2 3 5 3 0 5 10 15 20 25 30 IT13730 Drain Current, ID -- A 10 9 VGS -- Qg IT13729 Drain-to-Source Voltage, VDS -- V 100 7 5 3 2 [Nch] ASO [Nch] Gate-to-Source Voltage, VGS -- V VDS=15V ID=7A Drain Current, ID -- A IDP=40A (PW≤10μs) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=7A 10 ms 10 0m op s era tio n( Ta= 25° Operation in this C) area is limited by RDS(on). 1m DC 100 s μs 0.01 0.01 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Total Gate Charge, Qg -- nC --10.0V --4.0V V-4.5 V --3. 5V --3.0 ID -- VDS .0 V IT15732 Drain-to-Source Voltage, VDS -- V --9 [Pch] ID -- VGS IT15731 [Pch] VDS= --10V --8 --7 --2.5 --18.0V --3 Drain Current, ID -- A --2.0 Drain Current, ID -- A --6 --5 --4 --3 --2 --1.5 --1.0 --6.0 VGS= --2.5V --0.5 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 Ta= 75° C --25 °C 25° C --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V IT14855 Gate-to-Source Voltage, VGS -- V IT14856 No. A1777-4/6 ECH8661 200 RDS(on) -- VGS ID= --1.5A --2.5A [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 90 80 70 60 50 40 30 20 10 --60 --40 --20 0 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 160 140 120 100 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 5A --1. I D= 0V, --4. 5A --1. S= VG I D= 5V, --4. A S= VG --2.5 I= .0V, D 0 = --1 VGS --14 --16 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 2 | yfs | -- ID IT15727 Ambient Temperature, Ta -- °C 2 --10 7 5 3 2 --1.0 7 5 3 2 [Pch] VDS= --10V IS -- VSD IT15728 Forward Transfer Admittance, | yfs | -- S [Pch] VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 57 IT14859 --0.01 7 5 3 2 --0.001 --0.2 --0.4 Ta= 7 --0.6 --25 ° --0.8 5°C --2 a= T °C 75 5°C --0.1 7 5 3 2 25°C C 25 °C Source Current, IS -- A --1.0 --1.2 IT14860 Drain Current, ID -- A 100 7 SW Time -- ID td(off) tf [Pch] 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Pch] f=1MHz Switching Time, SW Time -- ns 5 1000 Ciss, Coss, Crss -- pF 7 5 3 2 3 2 Ciss tr 10 7 5 3 --0.1 td(on) VDD= --15V VGS= --10V 2 3 5 7 --1.0 2 3 5 100 7 5 0 --5 --10 Coss Crss Drain Current, ID -- A --10 --9 VGS -- Qg 7 --10 2 IT14861 --15 --20 --25 --30 IT14862 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 [Pch] ASO [Pch] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --5.5A Drain Current, ID -- A IDP= --40A (PW≤10μs) 10 --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --5.5A 1m s 0μ s 10m DC ope 100 rat ion s ms Operation in this area is limited by RDS(on). (Ta =2 5°C ) --0.01 --0.1 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg -- nC IT15733 Drain-to-Source Voltage, VDS -- V IT15729 No. A1777-5/6 ECH8661 1.8 PD -- Ta [Nch/Pch] Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 To t al Di 1u ss nit ip ati on Ambient Temperature, Ta -- °C IT15730 Note on usage : Since the ECH8661 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No. A1777-6/6