ECH8668

Ordering number : ENA1510 ECH8668 SANYO Semiconductors DATA SHEET ECH8668 Features • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions N-channel 20 ±10 7.5 40 1.3 1.5 150 --55 to +150 P-channel --20 ±10 --5 --40 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 20 1 ±10 1.3 V μA μA V Symbol Conditions Ratings min typ max Unit Marking : TP Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2809PE TK IM TC-00002167 No. A1510-1/6 ECH8668 Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--3A ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--5A VDS=--10V, VGS=--4.5V, ID=--5A VDS=--10V, VGS=--4.5V, ID=--5A IS=--5A, VGS=0V --0.4 4.9 8.3 29 41 64 960 180 140 14 55 92 68 11 2.0 2.8 --0.82 --1.2 38 58 98 --20 --1 ±10 --1.3 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=4A ID=4A, VGS=4.5V ID=2A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4.5V, ID=7.5A VDS=10V, VGS=4.5V, ID=7.5A VDS=10V, VGS=4.5V, ID=7.5A IS=7.5A, VGS=0V Ratings min 4.2 typ 7 13 18 30 1060 180 135 17.5 120 68 80 10.8 2.1 2.9 0.74 1.2 17 26 48 max Unit S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V No. A1510-2/6 ECH8668 Package Dimensions unit : mm (typ) 7011A-001 Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 Electrical Connection 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view 0.25 1 0.65 4 0.3 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bot t om View 0.07 SANYO : ECH8 Switching Time Test Circuit [N-channel] 4V 0V VIN VDD=10V [P-channel] 0V --4V VIN VDD= --10V VIN PW=10μs D.C.≤1% G D ID=4A RL=2.5Ω VOUT PW=10μs D.C.≤1% VIN D ID= --3A RL=3.33Ω VOUT G P.G ECH8668 50Ω S P.G ECH8668 50Ω S 7.5 ID -- VDS 2.5V [Nch] 10 9 8 ID -- VGS 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Drain Current, ID -- A 6.0V 4.0V 2.0 7.0 V [Nch] VDS=10V Drain Current, ID -- A 3.0V 7 6 5 4 3 2 1 8.0V VGS=1.5V Ta=75 °C 0 0.5 1.0 0 0.1 0.2 0.3 0.4 0.5 IT12483 0 25°C 1.5 --25°C 2.0 2.5 IT12484 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V No. A1510-3/6 ECH8668 40 RDS(on) -- VGS [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 40 35 30 25 20 15 10 5 0 --60 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 35 30 ID=2A 25 4A 20 15 10 5 0 4A I D= .1V, =3 VGS =2.5 VGS = V, I D 2A =4A , ID 4.0V = VGS I =4A 4.5V, D V GS= 0 2 4 6 8 10 IT12485 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 [Nch] IS -- VSD IT12486 [Nch] VGS=0V Forward Transfer Admittance, | yfs | -- S 7 5 VDS=10V 2 = Ta --2 °C 75 1.0 7 5 3 2 0.1 0.01 0.1 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 1000 7 SW Time -- ID 5 7 10 IT12487 0 0.1 0.2 0.3 Ta=7 5°C 25°C --25°C 0.4 0.5 0.6 °C 25 Source Current, IS -- A 3 C 5° 2 0.7 0.8 0.9 1.0 [Nch] VDD=10V VGS=4V Ciss, Coss, Crss -- pF 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT12488 [Nch] f=1MHz Switching Time, SW Time -- ns 5 3 2 Ciss 1000 7 5 3 2 100 7 5 3 2 10 0.1 td(off) tf tr td(on) Coss Crss 100 7 2 3 5 7 1.0 2 3 5 7 5 10 0 2 4 6 8 10 12 14 16 18 20 Drain Current, ID -- A 4.5 4.0 3.5 VGS -- Qg IT12489 Drain-to-Source Voltage, VDS -- V 7 5 3 2 [Nch] ASO IT12490 Gate-to-Source Voltage, VGS -- V VDS=10V ID=7.5A Drain Current, ID -- A IDP=40A ID=7.5A 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 [Nch] PW≤10μs 10 1m 0μs s 10 10 DC ms op era 0m tio s n( Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 23 5 7 0.1 23 5 7 1.0 Ta =2 5° C) 0.01 0.01 23 5 7 10 23 5 Total Gate Charge, Qg -- nC IT12491 Drain-to-Source Voltage, VDS -- V IT14781 No. A1510-4/6 ECH8668 --2.5V --5 ID -- VDS --4.5V --8.0V V --2.0 --1. 8V [Pch] --8 --7 --6 --5 --4 --3 ID -- VGS [Pch] VGS= --10V --4 Drain Current, ID -- A --3 --1.5V --2 Drain Current, ID -- A Ta= 75° C 0 --0.5 --1.0 --2 --1 0 --1 VGS= --1.2V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 25° --1.5 C --25°C --2.0 --2.5 IT13074 Drain-to-Source Voltage, VDS -- V 140 RDS(on) -- VGS IT13073 Gate-to-Source Voltage, VGS -- V 100 [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 80 ID= --0.5A 80 60 40 20 0 --0.5 ,I = --1.8V D S= VG A --1.5A --3.0A 60 40 A = --1.5 V, I D = --2.5 V GS --3.0A ,I = --4.5V D V GS= 20 0 --1 --2 --3 --4 --5 --6 --7 --8 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 | yfs | -- ID IT13075 Ambient Temperature, Ta -- °C --10 7 5 3 2 --1.0 7 5 [Pch] VDS= --10V IS -- VSD IT13076 [Pch] VGS=0V Forward Transfer Admittance, | yfs | -- S 2 10 3 2 1.0 7 5 3 2 0.1 --0.01 C 5° --2 = °C Ta 75 2 C 5° Source Current, IS -- A 7 5 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 1000 7 5 3 2 100 7 5 3 2 10 7 --0.01 SW Time -- ID 5 7 --10 IT13077 --0.01 0 --0.2 --0.4 Ta= 75°C 25°C --25° C --0.6 3 2 --0.8 --1.0 --1.2 IT13078 [Pch] VDD= --10V VGS= --4V Ciss, Coss, Crss -- pF 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Pch] f=1MHz Switching Time, SW Time -- ns 1000 7 5 3 2 Ciss td(off) tf tr td(on) Coss Crss 100 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT13079 7 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V IT13080 No. A1510-5/6 ECH8668 --4.5 --4.0 --3.5 VGS -- Qg VDS= --10V ID= --5A [Pch] Gate-to-Source Voltage, VGS -- V --100 7 5 3 2 ASO IDP= --40A [Pch] PW≤10μs 10 0 1 m μs s Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --5A 10 DC op 10 ms era 0m s tio n( Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 5 7--0.1 23 5 7--1.0 Ta = 25 °C ) --0.01 --0.01 2 3 23 5 7 --10 23 5 Total Gate Charge, Qg -- nC 1.8 PD -- Ta IT13081 Drain-to-Source Voltage, VDS -- V IT13082 [Nch/Pch] Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 When mounted on ceramic substrate (900mm2×0.8mm) To t al Di 1u ss nit ip ati on 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT13083 Note on usage : Since the ECH8668 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2009. Specifications and information herein are subject to change without notice. PS No. A1510-6/6