ECH8673

Ordering number : ENA1892 ECH8673 SANYO Semiconductors DATA SHEET ECH8673 Features • • • • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications ON-resistance Nch: RDS(on)1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm) Conditions N-channel 40 ±20 3.5 30 1.3 1.5 150 --55 to +150 P-channel --40 ±20 --2.5 --30 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7011A-001 Top View 0.25 2.9 0.15 8 5 0 to 0.02 2.8 2.3 Product & Package Information • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TU TL Lot No. 0.25 1 0.65 4 0.3 Electrical Connection 8 7 6 5 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bottom View 0.07 SANYO : ECH8 1 2 3 4 http://semicon.sanyo.com/en/network D0810PE TKIM TC-00002347 No. A1892-1/6 ECH8673 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--40V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A ID=--1.5A, VGS=--10V ID=--0.75A, VGS=--4.5V ID=--0.75A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--2.5A VDS=--20V, VGS=--10V, ID=--2.5A VDS=--20V, VGS=--10V, ID=--2.5A IS=--2.5A, VGS=0V --1.2 2.7 125 190 215 198 36 8.1 5.8 10.3 27.6 17.3 5.9 0.84 1.3 --0.87 --1.2 163 266 301 --40 --1 ±10 --2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=1A, VGS=4.5V ID=1A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=20V, VGS=10V, ID=3.5A VDS=20V, VGS=10V, ID=3.5A VDS=20V, VGS=10V, ID=3.5A IS=3.5A, VGS=0V 40 1 ±10 1.2 1.7 65 105 125 230 36 9.9 5.8 10.6 18.5 9.8 5.3 1.1 1.1 0.84 1.2 85 147 175 2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit No. A1892-2/6 ECH8673 Switching Time Test Circuit [N-channel] 10V 0V VIN VDD=20V [P-channel] 0V --10V VIN VDD= --20V VIN PW=10μs D.C.≤1% G D ID=2A RL=10Ω VOUT PW=10μs D.C.≤1% VIN D ID= --1.5A RL=13Ω VOUT G P.G ECH8673 50Ω S P.G ECH8673 50Ω S 16.0V 10.0V 6.0V 3.5 3.0 ID -- VDS 4.5 4.0 V [Nch] 7.0 6.5 6.0 5.5 ID -- VGS VDS=10V [Nch] V Drain Current, ID -- A Drain Current, ID -- A 2.5 2.0 5.0 4.5 4.0 3.5 3.0 2.0 1.5 1.0 0.5 0 2.5 3.5V 1.5 1.0 0.5 0 VGS=3.0V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25° C --25°C 4.0 4.5 Ta= 75° C 5.0 Drain-to-Source Voltage, VDS -- V 250 RDS(on) -- VGS IT16156 Gate-to-Source Voltage, VGS -- V 250 [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta IT16157 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 ID=1A 2A 200 150 150 100 100 1A , I D= =4.0V VGS =1A V, I D =4.5 VGS =2A V, I D =10.0 VGS 50 50 0 0 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT16158 Ambient Temperature, Ta -- °C IT16159 No. A1892-3/6 ECH8673 10 | yfs | -- ID Forward Transfer Admittance, | yfs | -- S 7 5 [Nch] VDS=10V 10 7 5 3 2 1.0 7 5 IS -- VSD [Nch] VGS=0V 2 7 5 3 2 0.1 0.01 °C 25 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 100 7 SW Time -- ID 5 7 10 IT16160 0.01 0 0.2 0.4 Ta=7 5°C 25°C --25°C 0.6 0.8 1.0 °C -25 =C Ta 75° Source Current, IS -- A 3 3 2 1.0 1.2 1.4 IT16161 Switching Time, SW Time -- ns 5 3 2 [Nch] VDD=20V VGS=10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V [Nch] f=1MHz td(off) 10 7 5 3 2 1.0 0.1 tf td(on) tr Coss Crss 2 3 5 7 1.0 2 3 5 7 1.0 10 0 5 10 15 20 25 30 35 40 Drain Current, ID -- A 10 9 VGS -- Qg IT16162 Drain-to-Source Voltage, VDS -- V 100 7 5 3 2 [Nch] ASO IT16163 [Nch] Gate-to-Source Voltage, VGS -- V VDS=20V ID=3.5A Drain Current, ID -- A IDP=30A (PW≤10μs) 10 0μ 1m s s 10 10 ms 0m s 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT16164 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=3.5A DC op tio n( Ta Operation in this =2 5°C area is limited by RDS(on). ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 era 0.01 0.1 Total Gate Charge, Qg -- nC V 0V --10. 0V --2.5 ID -- VDS .0V 5V Drain-to-Source Voltage, VDS -- V --5.0 --4.5 --4.0 [Pch] 5V --3. ID -- VGS 5 7 100 IT16165 [Pch] --6. 0 VDS= --10V --4 . --2.0 --4 Drain Current, ID -- A Drain Current, ID -- A --16. --3.5 --3.0 --2.5 --2.0 --1.5 --3.0V --1.0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 25° --3.0 --3.5 VGS= --2.5V --0.5 Ta= 7 --0.5 --1.0 C --25 °C --1.5 5°C --4.0 Drain-to-Source Voltage, VDS -- V IT16166 Gate-to-Source Voltage, VGS -- V IT16167 No. A1892-4/6 ECH8673 450 RDS(on) -- VGS ID= --0.75A --1.5A [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 450 400 350 300 250 200 150 100 50 0 --60 --40 --20 0 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 350 300 250 200 150 100 50 0 0 --2 --4 = -VGS = -, ID 4.0V 0.75 A = VGS = -V, I D --4.5 0.75 A 0.0 = --1 VGS .5A = --1 V, I D --6 --8 --10 --12 --14 --16 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID IT16168 --10 7 5 3 2 --1.0 7 5 3 2 Ambient Temperature, Ta -- °C Forward Transfer Admittance, | yfs | -- S 7 5 [Pch] VDS= --10V IS -- VSD IT16169 [Pch] VGS=0V 2 1.0 7 5 3 2 0.1 --0.01 °C -25 =C Ta 75° 25 °C Source Current, IS -- A 3 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT16170 --0.01 0 --0.2 --0.4 Ta=75 ° C 25°C --25°C --0.6 --0.8 --0.1 7 5 --1.0 --1.2 --1.4 Drain Current, ID -- A 100 7 SW Time -- ID Switching Time, SW Time -- ns 5 3 2 [Pch] VDD= --20V VGS= --10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT16171 [Pch] f=1MHz td(off) Ciss tf tr td(on) Coss 10 7 5 3 2 1.0 --0.1 Crss 2 3 5 7 --1.0 2 3 5 7 1.0 --10 0 --5 --10 --15 --20 --25 --30 --35 --40 Drain Current, ID -- A --10 --9 VGS -- Qg IT16172 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 [Pch] ASO IT16173 [Pch] Gate-to-Source Voltage, VGS -- V VDS= --20V ID= --2.5A Drain Current, ID -- A IDP= --30A (PW≤10μs) 10 --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 IT16174 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --2.5A DC op era 0μ 1m s s 10 ms 10 0m s Operation in this area is limited by RDS(on). tio n( Ta = 25 °C ) --0.01 --0.1 Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 --100 IT16175 No. A1892-5/6 ECH8673 1.8 Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 PD -- Ta [Nch/Pch] When mounted on ceramic substrate (1200mm2×0.8mm) To t al Di 1u ss nit ip ati on 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16176 Note on usage : Since the ECH8673 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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