ECH8901

Ordering number : ENA1472 ECH8901 SANYO Semiconductors DATA SHEET ECH8901 Appllications • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features • • • • Composite type, facilitating high-density mounting. Mounting height 0.9mm. IECO is guaranteed for preventing reverse flow from the collector to the emitter. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP PW≤10μs, duty cycle≤1% --12 ±10 -6 --40 V V A A VCBO VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (900mm2×0.8mm) 1unit --30 --30 -5 -3 -6 --600 1.3 150 --55 to +150 V V V A A mA W °C °C Symbol Conditions Ratings Unit Marking : LA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 21010EA TK IM TC-00002268 No. A1472-1/6 ECH8901 Continued from preceding page. Parameter Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol PD PT Tch Tstg Conditions When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 1.3 1.5 150 --55 to +150 Unit W W °C °C Electrical Characteristics at Ta=25°C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS1 IDSS2 IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--8V, VGS=0V VDS=--12V, VGS=0V VGS=±8V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--3A ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--6A VDS=--6V, VGS=--4.5V, ID=--6A VDS=--6V, VGS=--4.5V, ID=--6A IS=--6A, VGS=0V --0.4 6.6 11 21 31 49 1000 320 250 11 72 105 87 11 1.5 2.9 --0.81 --1.2 28 45 78 --12 --1 --10 ±10 --1.4 V μA μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ICBO IEBO IECO hFE fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB= --30V, IE=0A VEB= --4V, IC=0A VEC= --4.5V, IB=0A VCE= --2V, IC= --500mA VCE= --10V, IC= --500mA VCB= --10V, f=1MHz IC= --1.5A, IB= --30mA IC= --1.5A, IB= --75mA IC= --1.5A, IB= --30mA IC= --10μA, IE=0A IC= --1mA, RBE=∞ IE= --10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 200 380 25 --140 --90 --0.83 --30 --30 --5 50 270 25 --200 --135 --1.2 --0.1 --0.1 --1 560 MHz pF mV mV V V V V ns ns ns μA μA μA Symbol Conditions Ratings min typ max Unit Note : The specifications shown above are for each individual transistor. No. A1472-2/6 ECH8901 Package Dimensions unit : mm (typ) 7011A-006 Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 1 2 3 4 Electrical Connection 8 7 6 5 1 : Emitter 2 : Base 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Collector 8 : Collector Top view 0.25 1 0.65 4 0.3 1 : Emitter 2 : Base 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Collector 8 : Collector Bot t om View 0.07 0.9 SANYO : ECH8 Switching Time Test Circuit [TR] PW=20μs D.C.≤1% INPUT VR 50Ω IB1 IB2 RB + 100μF VBE=5V IC=20IB1= --20IB2=500mA + 470μF VCC= --12V Vout [FET] 0V --4.5V VIN VDD= --6V VIN RL PW=10μs D.C.≤1% G D ID= --2A RL=3Ω VOUT P.G ECH8901 50Ω S --2.0 IC -- VCE --3 0m A [TR] --3.0 IC -- VBE --1.8 --40m --2 0m A --10mA --8mA --2.5 [TR] VCE= --2V Collector Current, IC -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 Collector Current, IC -- A --1.6 --50mA A --6mA --2.0 --4mA --1.5 --1.0 --2mA --0.5 IB=0mA 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 Ta=75° C 25°C --25°C --0.8 --1.0 --1.2 IT14664 Collector-to-Emitter Voltage, VCE -- V IT14663 Base-to-Emitter Voltage, VBE -- V No. A1472-3/6 ECH8901 5 hFE -- IC Ta=75°C [TR] VCE= --0.5V 5 hFE -- IC Ta=75°C [TR] VCE= --2V 3 3 DC Current Gain, hFE 2 DC Current Gain, hFE 25°C --25°C 25°C --25°C 2 100 100 7 5 --0.01 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 7 IT14665 f T -- IC Collector Current, IC -- A 100 7 [TR] VCE= --10V Cob -- VCB IT14666 [TR] f=1MHz Gain-Bandwidth Product, f T -- MHz 5 Output Capacitance, Cob -- pF 3 2 5 3 100 7 5 2 10 7 --1.0 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 2 3 5 7 --10 2 3 5 IT14668 Collector Current, IC -- A 3 2 VCE(sat) -- IC IT14667 Collector-to-Base Voltage, VCB -- V 7 5 [TR] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V VCE(sat) -- IC [TR] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --100 7 5 3 2 --100 7 5 3 2 = Ta °C 75 5 --2 °C 2 C 5° = Ta °C 75 °C --25 °C 25 --10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 3 VBE(sat) -- IC IT14669 Collector Current, IC -- A 2 --10 7 5 [TR] IC / IB=50 ASO IT14670 [TR] Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 ICP= --6A s 0μ 10 μs 500 Collector Current, IC -- A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IC= --3A DC op 1m 10 er --1.0 7 5 0m s 10 m Ta= --25°C ati s s on 75°C 25°C 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.01 --0.01 2 3 Ta=25°C Single pulse 5 7--0.1 23 5 7--1.0 23 5 7 --10 23 5 Collector Current, IC -- A IT14671 Collector-to-Emitter Voltage, VCE -- V IT14672 No. A1472-4/6 ECH8901 --8.0V --6.0V --6 ID -- VDS --2.5V --1. 8V [FET] --10 --9 --8 ID -- VGS [FET] VDS= --6V --5 Drain Current, ID -- A --4 V GS= -- 1.5V Drain Current, ID -- A --4.5 V --4.0 V --7 --6 --5 --4 --3 --2 --1 --2 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 25° --1.5 C --25°C Ta= 75° C --3 --2.0 --2.5 IT12948 Drain-to-Source Voltage, VDS -- V 100 RDS(on) -- VGS IT12947 Gate-to-Source Voltage, VGS -- V 80 [FET] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta [FET] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 80 70 60 50 40 30 20 10 0 0 --2 --4 --6 --8 IT12949 70 60 50 40 30 20 10 0 --60 --3.0A --1.5A = --0.5 V, I D = --1.8 V GS --2.5 V GS= A ID= --0.5A --1.5 V, I D= A 3.0A , I D= -= --4.5V V GS --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 5 | yfs | -- ID Ambient Temperature, Ta -- ∞C --10 7 5 3 2 [FET] IS -- VSD IT12950 [FET] VGS=0V Forward Transfer Admittance, | yfs | -- S 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 VDS= --6V C 5° -2 =°C Ta 75 2 C 5° Source Current, IS -- A --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 0.001 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT12952 0.01 --0.001 2 3 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 Drain Current, ID -- A 1000 7 5 3 2 SW Time -- ID 5 7 --10 IT12951 [FET] VDD= --6V VGS= --4.5V Ciss, Coss, Crss -- pF 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V Ta= 7 5°C 25°C --25° C [FET] f=1MHz Switching Time, SW Time -- ns 1000 7 5 Ciss td(off) 100 7 5 3 2 10 7 --0.01 tf Coss 3 2 tr td(on) 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT12953 Crss 100 0 --2 --4 --6 --8 --10 --12 IT12954 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A1472-5/6 ECH8901 --4.5 --4.0 --3.5 VGS -- Qg VDS= --6V ID= --6A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --40A PW≤10μs 1m ID= --6A s 10 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 DC op 10 ms era 0m tio s n( Ta = Operation in this area is limited by RDS(on). 25 °C ) --0.01 --0.01 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC 1.8 IT12955 PD -- Ta Drain-to-Source Voltage, VDS -- V IT12956 Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 When mounted on ceramic substrate (900mm2×0.8mm) To t 1u al Di ss ip nit ati on 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12957 Note on usage : Since the ECH8901 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No. A1472-6/6