F5H2201

Ordering number : ENA0403 F5H2201 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor F5H2201 Applications • 50V / 15A High-Speed Switching Applications High-speed switching applications (switching regulator, driver circuit). Features • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. The F5H2201 consists of two chips which are equivalent to the 2SC6082 encapsulated in a package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (PW=1s) Collector Current (PW=100ms) Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC IC IC ICP IB PC PT Tj Tstg Duty cycle≤1% Duty cycle≤1% PW≤10µs, duty cycle≤10% Conditions Ratings 60 60 50 6 10 12 15 20 3 2 Tc=25°C, 1unit Tc=25°C 25 28 150 --55 to +150 Unit V V V V A A A A A W W W °C °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53007FA TI IM TC-00000572 No. A0403-1/5 F5H2201 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=330mA VCE=2V, IC=10A VCE=10V, IC=2A VCB=10V, f=1MHz IC=7.5A, IB=375mA IC=7.5A, IB=375mA IC=100µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=100µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 60 50 6 52 560 37 200 50 195 85 250 500 1.2 MHz pF mV V V V V V ns ns ns Ratings min typ max 10 10 560 Unit µA µA Note : The specifications shown above are for each individual transistor. Package Dimensions unit : mm (typ) 7526-001 10.0 3.2 4.5 2.8 4 TR2 5 1 Electrical Connection 2 TR1 3 7.2 3.5 1 : Base1(TR1) 2 : Emitter1(TR1) 3 : Collector(Common) 4 : Base2(TR2) 5 : Emitter2(TR2) Top view 16.0 3.6 2.4 0.9 0.5 14.0 12 2.54 1.27 3 45 0.7 2.75 1 : Base1(TR1) 2 : Emitter1(TR1) 3 : Collector(Common) 4 : Base2(TR2) 5 : Emitter2(TR2) SANYO : TO-220FI5H 1.27 2.54 Switching Time Test Circuit IB1 IB2 RB OUTPUT PW=20µs D.C.≤1% INPUT VR 50Ω 2.4 RL + + 470µF VCC=25V 100µF VBE= --5V IC=20IB1= --20IB2=5A No. A0403-2/5 F5H2201 15 14 13 IC -- VCE 250 mA 1 20 7 IC -- VCE 60 mA 50 mA 0mA 4 30mA 20mA 15mA A 50m A A 100m 6 300 350 mA mA Collector Current, IC -- A 11 10 9 8 7 6 5 4 3 2 1 0 0 50mA Collector Current, IC -- A 5 30mA 20mA 10mA 4 80m A 70m A 12 0m 10mA 3 2 5mA 1 IB=0mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IB=0mA 0.8 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V 15 14 13 12 10 9 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT11022 1000 7 5 IC -- VBE Collector-to-Emitter Voltage, VCE -- V IT11023 hFE -- IC Ta=75°C 25°C --25°C VCE=2V VCE=2V Collector Current, IC -- A DC Current Gain, hFE 11 3 2 100 7 5 3 2 5°C 25° C Ta= 7 --25 °C 1.4 IT11024 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC Collector Current, IC -- A 1000 7 IT11025 f T -- IC Ta=25°C VCE=2V Gain-Bandwidth Product, f T -- MHz 5 3 2 VC DC Current Gain, hFE 3 2 =2 E .0 0.2 V 0.5 V V 1.0V 100 7 5 3 2 0.7 100 7 5 3 2 V 10 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1000 7 IT11026 1.0 Cob -- VCB Collector Current, IC -- A 5 7 10 IT11027 VCE(sat) -- IC f=1MHz 7 IC / IB=20 Output Capacitance, Cob -- pF 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 0.1 7 5 3 2 0.01 7 5 0.01 100 7 5 3 2 = Ta °C 75 --2 C 5° °C 25 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V IT11028 Collector Current, IC -- A IT11029 No. A0403-3/5 F5H2201 1.0 7 VCE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 VBE(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 2 1.0 7 Ta= --25°C 75°C 0.1 7 5 3 2 0.01 0.01 25 2 3 5 7 0.1 2 3 °C --2 Ta 5 =7 5° C °C 5 25°C 3 5 7 1.0 2 3 5 7 10 2 3 2 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 IT11031 5 3 2 Forward Bias A S O ICP=20A IC=15A (PT=100ms) 10 Collector Current, IC -- A IT11030 2.5 Collector Current, IC -- A PC -- Ta Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Collector Dissipation, PC -- W IC=10A (DC) ms 2.0 50 10 s 0µ 0m s 1m s 1.5 No DC op era tio n he at 1.0 sin k 0.5 0.01 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0 0 20 40 60 80 100 120 140 160 IT11032 Collector-to-Emitter Voltage, VCE -- V 35 Ambient Temperature, Ta -- °C IT11033 PC -- Tc 30 Collector Dissipation, PC -- W 28 25 20 To ta lD iss 15 1u ipa nit tio n 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT11034 No. A0403-4/5 F5H2201 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No. A0403-5/5