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FH104

FH104

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    FH104 - High-Frequency Low-Noise Amplifier, Differential Amplifier Applications - Sanyo Semicon Devi...

  • 数据手册
  • 价格&库存
FH104 数据手册
Ordering number:ENN6218 NPN Epitaxial Planar Silicon Composite Transistor FH104 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features · Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. · The FH104 is formed with two chips equivalent to the 2SC4853 placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection B1 B2 E2 12 0.65 2.0 3 0.2 0.425 Package Dimensions unit:mm 2149 [FH104] 0.425 0.15 6 5 4 1.25 2.1 0 to 0.1 C1 E1 C2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg 1 unit Conditions 0.9 TR1 TR2 Ratings 12 6 1.5 15 80 150 150 –55 to +150 0.2 0.25 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6 Unit V V V mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Base-to-Emitter Voltage Difference Symbol ICBO IEBO hFE hFE VCB=10V, IE=0 VEB=1V, IC=0 VCE=1V, IC=1mA VCE=1V, IC=1mA VCB=1V, IC=1mA 90 0.7 0.95 1.0 mV Conditions Ratings min typ max 1.0 10 200 Unit µA µA (small/large) (large-small) VBE Continued on next page. Note) The specifications shown above are for each individual transistor. However, the ratings for hFE (small/large) and VBE (large-small) indicate pair characteristics. Marking : 104 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1099TS (KOTO) TA-2353 No.6218–1/4 FH104 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol fT Cob | S21e |2 1 | S21e |2 2 NF VCE=1V, IC=1mA VCB=1V, f=1MHz VCE=1V, IC=1mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=1V, IC=1mA, f=1GHz 4.5 Conditions Ratings min typ 5 0.6 7 10.5 2.6 4.5 1.0 max Unit GHz pF dB dB dB 3 2 hFE -- IC Gain-Bandwidth Product, fT – GHz 2 f T -- IC DC Current Gain, hFE 100 7 5 3 2 V CE = 1V 10 7 5 3 2 2V V CE =2 V 1V 1.0 7 5 3 10 7 5 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 2 3 5 7 1.0 2 3 5 7 10 2 IT00312 Collector Current, IC – mA IT00311 14 Collector Current, IC – mA 2 S21e -- IC 2 Cob -- VCB f=1MHz Forward Transfer Gain, S21e – dB f=1GHz 12 Output Capacitance, Cob – pF 1.0 7 5 10 =2 E VC V 2 1V 8 6 3 2 4 2 0.1 7 5 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 IT00313 0 2 3 5 7 1.0 2 3 5 7 Collector-to-Base Voltage, VCB -- V 10 NF -- IC f=1GHz 14 S21e , NF -- VCE 2 Collector Current, IC – mA IT00314 f=1GHz 12 8 IC=3mA S21e 2 Noise Figure, NF – dB 10 6 S21e – dB 8 1mA 2 4 6 VCE=1V 2 4 NF 2 IC=1mA 3mA 2V 0 2 3 5 7 1.0 2 3 5 7 10 2 IT00315 0 0 1 2 3 4 5 6 7 IT00316 Collector Current, IC – mA Collector-to-Emitter Voltage,VCE – V No.6218–2/4 FH104 160 150 140 120 100 80 60 40 20 0 0 20 PC -- Ta Collector Dissipation, PC – mW To t 1u al D iss ip nit at io n Ambient Temperature, Ta – °C 40 60 80 100 120 140 160 IT00317 S parameter f=200MHz to 2000MHz(200MHz Step) S11e j50 j25 120˚ j100 j150 j10 j200 j250 150˚ 0.2 GH f=200MHz to 2000MHz(200MHz Step) S21e 90˚ 60˚ VCE=2V IC=3mA z =1V V CE 1mA I C= 30˚ 0 GH z --j10 VCE=2V IC=3mA V C IC= E=1V 1mA 0.2GHz 2.0 --j250 --j200 --j150 0.2 GH 10 25 50 100 150 250 ±180˚ z z GH 2.0 2 4 6 8 10 0 --150˚ --30˚ --j25 --j50 --j100 --120˚ IT00318 --60˚ --90˚ IT00319 f=200MHz to 2000MHz(200MHz Step) S12e 90˚ 120˚ 60˚ 2. 0G Hz 30˚ V =2 A CE 3m V= IC f=200MHz to 2000MHz(200MHz Step) S22e j50 j25 j100 j150 j10 j200 j250 150˚ V =1 A CE 1m V= IC 0.2G ±180˚ Hz 0.05 0.10 0.15 0.20 0 0 10 25 50 100 150 250 --150˚ --30˚ --j25 --120˚ --90˚ --60˚ IT00320 --j50 2.0 --j10 z VCE=2V .2GH 0 IC=3mA --j250 --j200 --j150 VCE=1V IC=1mA --j100 GH z IT00321 No.6218–3/4 FH104 S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50Ω Freq (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.940 0.863 0.778 0.698 0.608 0.546 0.470 0.418 0.388 0.354 ∠ S11 –17.9 –33.7 –48.0 –60.5 –73.5 –84.7 –96.2 –106.4 –117.3 –127.0 | S21 | 3.228 2.983 2.732 2.469 2.320 2.106 1.977 1.826 1.700 1.615 ∠ S21 159.6 143.7 129.9 117.7 106.2 96.3 87.1 78.8 72.2 65.9 | S12 | 0.058 0.107 0.145 0.173 0.195 0.210 0.129 0.224 0.230 0.234 ∠ S12 77.1 66.6 58.1 50.9 45.4 40.9 37.6 35.3 33.8 32.9 | S22 | 0.972 0.914 0.844 0.773 0.717 0.668 0.624 0.590 0.562 0.546 ∠ S22 –12.2 –22.7 –31.7 –39.6 –46.0 –51.7 –56.5 –60.6 –64.3 –67.5 VCE=2V, IC=3mA, ZO=50Ω Freq (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.839 0.672 0.536 0.431 0.360 0.310 0.265 0.242 0.228 0.217 ∠ S11 –30.6 –53.7 –71.7 –85.7 –99.0 –111.4 –122.6 –134.7 –148.0 –157.2 | S21 | 7.428 6.016 4.908 4.073 3.494 3.033 2.694 2.422 2.205 2.061 ∠ S21 149.3 128.5 113.6 101.9 92.7 84.4 77.4 70.9 65.9 60.8 | S12 | 0.050 0.083 0.105 0.121 0.135 0.150 0.162 0.175 0.189 0.205 ∠ S12 71.4 60.6 55.1 52.5 51.4 50.9 50.9 51.0 51.1 51.0 | S22 | 0.916 0.778 0.672 0.597 0.548 0.514 0.492 0.475 0.461 0.456 ∠ S22 –18.3 –30.2 –37.1 –41.9 –45.7 –49.2 –52.3 –55.6 –59.0 –61.8 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 1999. Specifications and information herein are subject to change without notice. PS No.6218–4/4
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