FSS138

Ordering number:ENN6400 P-Channel Silicon MOSFET FSS138 DC/DC Converter Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2116 [FSS138] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Conditions Ratings –30 ±20 –11 Unit V V A A W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2×0.8mm) –52 2.0 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–11A ID=–11A, VGS=–10V ID=–4A, VGS=–4.5V ID=–4A, VGS=–4V –1.0 17 25 11 15 16 15 21 23 Conditions Ratings min –30 –1 ±10 –2.4 typ max Unit V µA µA V S mΩ mΩ mΩ Marking : S138 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2506 No.6400-1/4 FSS138 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=–10V, VGS=–10V, ID=–11A VDS=–10V, VGS=–10V, ID=–11A VDS=–10V, VGS=–10V, ID=–11A IS=–11A, VGS=0 Conditions Ratings min typ 3700 840 440 24 265 240 165 75 10 12 –0.79 –1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=--15V VIN 0V --10V VIN PW=10µs D.C.≤1% ID=--11A RL=1.36Ω D VOUT G P.G 50Ω FSS138 S --10 --9 --8 ID -- VDS --4.5V --6.0V --18 --16 --14 ID -- VGS VDS=--10V Drain Current, ID – A 0V --3 . --2.5V 5V --4. --7 --6 --5 --4 --3 --2 --1 0 0 Drain Current, ID – A --12 --10 --8 --6 --10.0 V --3 . 0V 75° Ta= VGS=--2.0V --0.1 --0.2 --0.3 --0.4 --0.5 IT00414 --2 0 0 --0.5 --1.0 --1.5 --2.0 --25 °C --2.5 25°C --3.0 IT00415 140 160 IT00417 --4 Drain-to-Source Voltage, VDS – V 50 Gate-to-Source Voltage, VGS – V 40 35 RDS(on) -- VGS Ta=25°C RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 40 Static Drain-to-Source On-State Resistance, RDS (on) – mΩ --11A 30 30 25 20 15 10 5 0 --60 20 ID=--4A --4.0 V GS= 10 --4A V, I D= --4A V, I D= =--4.5 V GS I =--11A =--10.0V, D V GS 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 --40 --20 0 20 40 60 80 C 100 120 Gate-to-Source Voltage, VGS – V IT00416 Ambient Temperature, Ta – ˚C No.6400-2/4 FSS138 Forward Transfer Admittance, | yfs | – S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 yfs -- ID VDS=--10V --100 7 5 3 2 IF -- VSD VGS=0 Ta= °C --25 25 C 75° °C Forward Current, IF – A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 0 --0.2 Ta= 75° C 25 ° C --25 °C --0.4 --0.6 --0.8 --1.0 --1.2 IT00419 Drain Current, ID – A IT00418 --10 Diode Forward Voltage, VSD – V 10000 7 5 Ciss, Coss, Crss -- VDS f=1MHz VGS -- Qg VDS=--10V ID=--11A --9 Ciss Gate-to-Source Voltage, VGS – V --20 --25 --30 IT00420 --8 --7 --6 --5 --4 --3 --2 --1 Ciss, Coss, Crss – pF 3 2 1000 7 5 3 2 Coss Crss 100 0 --5 --10 --15 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 IT00421 Drain-to-Source Voltage, VDS – V 1000 7 Total Gate Charge, Qg – nC --100 7 5 3 2 SW Time -- ID VDD=--15V VGS=--10V td(off) tf ASO IDP=--52A ID=--11A