FSS145

Ordering number : ENA0341 FSS145 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET FSS145 Features • • • General-Purpose Switching Device Applications Load switching applications. Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10µs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD Tch Tstg Duty cycle≤1% Duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm), PW≤10s Conditions Ratings -45 ± 20 --8 --8.5 -32 2.9 150 --55 to +150 Unit V V A A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-45V, VGS=0V VGS=± 16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=--8A ID=--8A, VGS=-10V ID=--4A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --45 --1 ± 10 --1.2 10 17 18 28 3490 370 290 35 65 270 125 24 40 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : S145 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 22006PA MS IM TB-00002039 No. A0341-1/4 FSS145 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--24V, VGS=--10V, ID=-8A VDS=--24V, VGS=--10V, ID=-8A VDS=--24V, VGS=--10V, ID=-8A IS=--8A, VGS=0V Ratings min typ 63 9 12 --0.81 --1.5 max Unit nC nC nC V Package Dimensions unit : mm 7005-002 8 5 0.3 Switching Time Test Circuit VIN 0V --10V VIN VDD= --24V ID= --8A RL=3Ω 4.4 6.0 PW=10µs D.C.≤1% D VOUT 1 4 0.43 0.2 5.0 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 G FSS145 P.G 50Ω 1.5 1.8 MAX S 0.595 1.27 0.1 V --8 ID -- VDS --6.0 V --12 ID -- VGS VDS= --10V --3.3 --7 --6 --5 --4 --3 --2 --1 0 0 --3 . 0V --2.8V --10 Drain Current, ID -- A --10.0V --8.0V 0V Drain Current, ID -- A --4. --5. 0V --8 --6 VGS= --2.5V --4 Ta=7 5 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4 °C 0 --0.2 --0.4 --0.6 --0.8 --1.0 IT10745 60 25° --2 --25° --2.8 --3.2 C C 0 --3.6 Drain-to-Source Voltage, VDS -- V 80 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT10746 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 60 50 50 40 ID= --4A 40 30 20 10 0 --1 --8A 30 -I D= = --4 VGS 4A, .0V 20 VG -8A, I D= - --10 S= .0V 10 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT10747 Ambient Temperature, Ta -- °C IT10748 No. A0341-2/4 FSS145 5 yfs -- ID VDS= --10V C 25° Forward Transfer Admittance, yfs -- S 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IS -- VSD VGS=0V Tc= 75 25°C --0.6 0.01 --0.001 2 3 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain Current, ID -- A IT10749 7 5 --0.01 7 5 3 2 --0.001 --0.2 --0.4 --25° --0.8 = Tc °C --2 C 5° C 75 °C Source Current, IS -- A --1.0 --1.2 IT10750 SW Time -- ID td(off) 10000 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD= --24V VGS= --10V Ciss, Coss, Crss -- pF 7 5 3 2 Switching Time, SW Time -- ns 3 2 tf 100 7 5 1000 7 5 3 2 td(on) 3 2 tr Coss Crss 10 --0.1 100 7 2 3 5 7 --1.0 2 3 5 7 --10 2 3 0 --5 --10 --15 --20 --25 --30 --35 --40 --45 Drain Current, ID -- A --10 --9 IT10751 --100 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT10752 ASO Gate-to-Source Voltage, VGS -- V VDS= --24V ID= --8A Drain Current, ID -- A IDP= --32A ≤10µs --8 --7 --6 --5 --4 --3 --2 --1 0 0 10 20 30 40 50 60 70 IT10753 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --8A 1m 10 DC 10 0m s s m s 10 op era s n Operation in this area is limited by RDS(on). tio --0.01 --0.01 2 3 Ta=25°C Single pulse Mounted on a ceramic board (1200mm2!0.8mm) 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 23 Total Gate Charge, Qg -- nC 3.5 PD -- Ta M Drain-to-Source Voltage, VDS -- V 5 7--100 IT10754 Allowable Power Dissipation, PD -- W 3.0 2.9 2.5 ou nt ed on ac er 2.0 am ic bo ar 1.5 d( 12 00 m 1.0 m2 ! 0.8 m m 0.5 0 0 20 40 60 80 100 120 ), PW ≤1 0 140 s 160 Ambient Temperature, Ta -- °C IT10755 No. A0341-3/4 FSS145 Note on usage : Since the FSS145 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2006. Specifications and information herein are subject to change without notice. PS No. A0341-4/4