FSS174

Ordering number : EN8738 FSS174 SANYO Semiconductors DATA SHEET FSS174 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions Ratings --30 ± 20 --6 --24 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-30V, VGS=0V VGS= ± 16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=--6A ID=--6A, VGS=-10V ID=--4A, VGS=-4.5V ID=--4A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --30 --1 ± 10 -1.2 5.4 9 26 42 49 1500 280 250 34 59 69 --2.6 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF Marking : S174 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 33006PA MS IM TB-00002215 No.8738-1/4 FSS174 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=-6A VDS=--10V, VGS=--10V, ID=-6A VDS=--10V, VGS=--10V, ID=-6A IS=--6A, VGS=0V Ratings min typ 15 100 150 95 30 4.3 5.7 --0.86 --1.5 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7005-002 8 5 0.3 Switching Time Test Circuit VIN 0V --10V VIN 4.4 6.0 VDD= --15V ID= --6A RL=2.5Ω 1 4 0.43 0.2 5.0 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 PW=10µs D.C.≤1% D VOUT G 1.5 1.8 MAX FSS174 P.G 50Ω S 0.595 1.27 0.1 --6 ID -- VDS --4.0 V 5V --3 .5V --6.0 V = --3 VGS .0V --6 ID -- VGS VDS= --10V --5 --5 Drain Current, ID -- A --10.0V --8.0V --4 Drain Current, ID -- A V-4 . --4 --3 --5. 0 --3 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Drain-to-Source Voltage, VDS -- V 100 IT09963 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 100 25° --1 --1 C --25° C IT09964 120 140 --2 --2 RDS(on) -- Ta Ta=25°C ID= --4A --6A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 70 60 50 40 30 20 10 0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 90 80 70 60 50 40 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 160 , VG --4A I D= --4 S= .0V .5V = --4 , VGS --4A I D= -10.0V V S= = --6A, G ID --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V IT09965 Ambient Temperature, Ta -- °C Ta=7 5°C IT09966 No.8738-2/4 FSS174 3 yfs -- ID VDS= --10V Forward Transfer Admittance, yfs -- S 2 10 --10 7 5 3 IS -- VSD VGS=0V Source Current, IS -- A 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 C 25° --2 5 °C 2 --1.0 7 5 75 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 3 5 7 --10 IT09967 --0.01 --0.4 --0.5 --0.6 25°C --0.7 3 2 --25° C --0.8 °C Ta= 75° C = Ta --0.9 --1.0 --1.1 SW Time -- ID td(off) 5 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT09968 VDD= --15V VGS= --10V 3 2 Switching Time, SW Time -- ns 2 100 7 5 3 2 tf Ciss, Coss, Crss -- pF Ciss 1000 7 5 3 2 td(on) tr Coss Crss 10 7 5 --0.1 100 7 2 3 5 7 --1.0 2 3 5 --10 IT09969 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 7 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 --22 --24 --26 --28 --30 Drain Current, ID -- A --10 --9 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT09970 ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --6A IDP= --24A ≤10µs --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 30 IT09971 ID= --6A Drain Current, ID -- A DC 10 0 1m µs s 10 10 ms 0m s op era tio Operation in this area is limited by RDS(on). n --0.01 --0.01 2 3 Ta=25°C Single pulse Mounted on a ceramic board (1200mm2!0.8mm) 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 Total Gate Charge, Qg -- nC 1.8 PD -- Ta M Drain-to-Source Voltage, VDS -- V IT09972 Allowable Power Dissipation, PD -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 ou nt ed on ac er am ic bo ar d (1 20 0m m2 ! 0. 8m m ) 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT09973 No.8738-3/4 FSS174 Note on usage : Since the FSS174 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No.8738-4/4