FSS207

Ordering number:ENN6346 N-Channel Silicon MOSFET FSS207 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 2.5V drive. Package Dimensions unit:mm 2116 [FSS207] 8 5 0.3 4.4 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 Conditions 0.1 1.8max 1 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Ratings 20 ±10 10 6.0 Unit V V A A W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 52 2 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 23 32 10 15 1700 1200 680 13 21 Conditions Ratings min 20 10 ±10 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : S207 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-1507 No.6346-1/4 FSS207 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A IS=10A, VGS=0 Ratings min typ 40 260 260 280 75 10 12 1.0 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=10V 4V 0V VIN ID=10A RL=1Ω VIN D PW=10µs D.C.≤1% VOUT G P.G 50Ω S FSS207 2.5V 2.0 V 10 9 8 ID -- VDS 8.0V 20 ID -- VGS VDS=10V 18 16 Drain Current, ID – A 7 6 5 4 3 2 1 0 0 0.1 Drain Current, ID – A 6.0V 3.0V 4.0V VGS=1.5V 14 12 10 8 5°C Ta= 7 0.2 0.4 0.6 0.8 1.0 1.2 1.4 6 4 2 0.2 0.3 0.4 0.5 IT01469 0 0 --25 1.6 1.8 °C 25°C 2.0 IT01470 120 140 160 IT01472 Drain-to-Source Voltage, VDS – V 40 Gate-to-Source Voltage, VGS – V 25 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 35 30 20 ID=10A 25 20 15 10 5 0 0 2A 15 VG 2A, I D= 2.5 S= V 10 =4.0V , V GS =10A ID 5 1 2 3 4 5 6 7 8 9 10 0 --60 --40 --20 0 20 40 60 80 100 Gate-to-Source Voltage, VGS – V IT01471 Ambient Temperature, Ta – ˚C No.6346-2/4 FSS207 Forward Transfer Admittance, | yfs | – S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 23 57 23 57 23 57 23 57 100 IT01473 10 yfs -- ID VDS=10V 100 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF – A =-Ta 25 °C 10 7 5 3 2 1.0 7 5 3 2 °C 75 Ta= 75°C 0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT01474 Drain Current, ID – A 10000 7 5 Diode Forward Voltage, VSD – V Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS – V VGS -- Qg VDS=10V ID=10A 9 8 7 6 5 4 3 2 1 Ciss, Coss, Crss – pF 3 2 Ciss Coss Crss 1000 7 5 3 2 100 0 2 4 6 8 10 12 14 16 18 20 0 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS – V 1000 7 IT01475 100 7 5 3 2 Total Gate Charge, Qg – nC --25°C 45 50 55 60 65 70 75 IT01476 SW Time -- ID td(off) tf VDD=10V VGS=4V Drain Current, ID – A ASO IDP=52A ID=10A 10 DC op 25°C 25 °C 0.1 7 5 3 2 100µs Switching Time, SW Time – ns 5 3 2 1m s 10 0m s ms 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 100 7 5 3 2 tr td(on) Operation in this area is limited by RDS(on). era tio n 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID – A 2.5 5 7 100 IT01477 0.01 0.01 Ta=25°C Single pulse Mounted on a ceramic board (1000mm2×0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Drain-to-Source Voltage, VDS – V 5 7 100 IT01478 PD -- Ta Allowable Power Dissipation, PD – W 2.0 M ou nt ed 1.5 on ac er am ic 1.0 bo ar d( 10 00 m 0.5 m2 ×0 .8m m ) 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta – ˚C IT01479 No.6346-3/4 FSS207 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6346-4/4