FSS264

Ordering number : ENA0267 FSS264 N-Channel Silicon MOSFET FSS264 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10µs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD Tch Tstg Duty cycle≤1% Duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) PW≤10s Conditions Ratings 100 ±20 4 5 16 2.4 150 --55 to +150 Unit V V A A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=2A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min 100 1 ±10 1.2 3.0 5.5 65 80 1560 130 83 16 25 155 66 85 112 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : S264 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2005PA MS IM TB-00001963 No. A0267-1/4 FSS264 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=50V, VGS=10V, ID=4A VDS=50V, VGS=10V, ID=4A VDS=50V, VGS=10V, ID=4A IS=4A, VGS=0V Ratings min typ 34 5.5 6 0.81 1.2 max Unit nC nC nC V Package Dimensions unit : mm 7005-002 8 5 Switching Time Test Circuit VDD=50V 10V 0V 6.0 VIN ID=2A RL=25Ω VIN 0.3 4.4 PW=10µs D.C.≤1% D G VOUT 1 4 0.43 0.2 5.0 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 P.G 50Ω 0.595 1.27 0.1 1.5 1.8 MAX S FSS264 8.0V 4.0 3.5 3.0 ID -- VDS 6.0V 3.0V 8 ID -- VGS VDS=10V 7 6 5 4 3 Drain Current, ID -- A 2.5 2.0 1.5 1.0 0.5 0 0 Drain Current, ID -- A 10.0V 4.0V Ta=7 5° 0 0.5 1.0 1.5 2.0 2.5 C --25° C 3.0 VGS=2.5V 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 25 ° C 2 3.5 IT10021 Drain-to-Source Voltage, VDS -- V 200 IT10020 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 200 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 150 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=2A 150 100 100 50 50 2A I D= 4V, = V GS 2A I D= 0V, =1 V GS 0 0 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT10022 Ambient Temperature, Ta -- °C IT10023 No. A0267-2/4 FSS264 3 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 2 10 5 3 2 1.0 7 5 3 2 0.1 0.01 10 7 5 3 2 IS -- VSD VGS=0V = Ta 7 C 5° 5°C --2 Source Current, IS -- A 7 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 Ta=7 5°C 2 C 5° 25°C 0.001 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 3 2 5 7 10 IT10024 5 0.4 0.6 --25°C 0.8 1.0 1.2 IT10025 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=50V VGS=10V 3 2 Switching Time, SW Time -- ns Ciss Ciss, Coss, Crss -- pF td(off) 1000 7 5 3 2 100 7 5 3 2 tf Coss 100 7 5 3 2 tr td(on) Crss 10 0.1 2 3 5 7 1.0 2 3 5 7 0 10 20 30 40 50 60 IT10027 Drain Current, ID -- A 10 9 IT10026 3 2 10 7 5 Drain-to-Source Voltage, VDS -- V Qg -- VGS VDS=50V ID=4A ASO IDP=16A ID=4A