FTD2011

Ordering number:ENN6072A N-Channel Silicon MOSFET FTD2011 Load Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2011] 0.65 8 5 0.95 3.0 0.425 4.5 6.4 0.5 1 0.25 4 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 20 ±10 5 20 0.8 1.3 150 –55 to +150 Unit V V A A W W Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) 0.1 Specifications 1.0 (0.95) 0.125 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=4A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.5 8 12 22 30 900 260 200 28 40 Conditions Ratings min 20 1 ±10 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : D2011 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52200TS (KOTO) TA-2077 No.6072–1/4 FTD2011 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=5A, VGS=0 VDS=10V, VGS=10V, ID=4A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 15 150 100 150 32 1.5 6 0.82 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit 4V 0V VIN VIN PW=10µs D.C.≤1% D Electrical Connection D2 S2 S2 G2 VDD=10V ID=4A RL=2.5Ω VOUT G P.G 50Ω S FTD2011 A11947 D1 S1 S1 G1 A11948 10 9 8 I D - VDS 3.5V 3.0V 2.5V 2.0V Drain Current, ID – A 4.0V 10 9 8 7 6 5 4 3 2 1 ID - VGS VDS=10V Drain Current, ID – A 7 6 5 4 3 2 1 0 0 1.5V VGS=1.0V 0.5 1.0 1.5 2.0 2.5 3.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 25° C 1.4 Ta= 1.6 1.8 75 ° C -25° C 2.0 Drain-to-Source Voltage, VDS – V 5 Gate-to-Source Voltage, VGS – V 70 | yf s | - ID VDS=10V Static Drain-to-Source On-State Resistance, RDS(on) – mΩ R DS(on) - VGS Ta=25°C Forward Transfer Admitance, | yfs | – S 3 2 60 ID=5A 50 10 7 5 3 2 T -2 a= 5°C 7 5°C 25° C 40 ID=2A 30 20 10 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 0 0 2 4 6 8 10 12 Drain Current, ID – A Gate-to-Source Voltage, VGS – V No.6072-2/4 FTD2011 60 R DS(on) - Ta Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 50 100 7 5 3 2 I F - VSD Forward Current, IF – A 40 30 20 10 0.1 7 5 3 2 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 -60 -40 -20 Ambient Temperature, Ta – °C 0 20 40 60 80 100 120 140 160 Diode Forward Voltage, VSD – V f=1MHz Gate-to-Source Voltage, VGS – V 10 9 8 7 6 5 4 3 2 1 10000 7 5 3 2 Ciss, Coss, Crss - VDS VDS=10V Ciss, Coss, Crss – pF 1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16 Ciss Coss Crss 18 20 0 0 4 8 Ta= A I D=4 1.0 7 5 3 2 VGS - Qg 12 75° C 25° C -25° C 16 20 2A I D= V =2.5 ,VGS =4V ,VGS 10 7 5 3 2 24 28 32 Drain-to-Source Voltage,VDS – V 1000 7 5 Total Gate Charge, Qg – nC SW Time - I D VDD=10V 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO