FTD2014

Ordering number:ENN6267 N-Channel Silicon MOSFET FTD2014 Load Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2014] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 0.5 1 0.25 4 (0.95) 0.125 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 20 ±10 4 20 0.8 1.3 150 –55 to +150 Unit V V A A W W Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) 0.1 Specifications 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 1.0 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=4A ID=4A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 7 10 32 42 700 200 150 42 59 Conditions Ratings min 20 1 ±10 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : D2014 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2166 No.6267–1/4 FTD2014 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=4A, VGS=0 VDS=10V, VGS=10V, ID=4A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 14 130 83 110 24 1.4 3.2 0.85 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=10V VIN 4V 0V VIN PW=10µs D.C.≤1% ID=4A RL=2.5Ω Electrical Connection D2 S2 S2 G2 D VOUT G P.G 50Ω FTD2014 D1 S1 S1 G1 (Top view) S 3.5V 4.0V 12 ID -- VDS 3.0V 2.5V Ta=25°C 2.0V 12 ID -- VGS VDS=10V 10 10 Drain Current, ID – A Drain Current, ID – A 8 8 6 6 1.5V 4 4 VGS=1.0V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00425 0 0 0.2 0.4 0.6 0.8 1.0 1.2 --2 5 1.4 1.6 2 °C 2 °C 25 Ta= 75° C 1.8 2.0 Drain-to-Source Voltage, VDS – V 90 Gate-to-Source Voltage, VGS – V 60 IT00426 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ RDS(on) -- Ta =2.5 , VGS V Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 80 70 50 4A 60 50 40 30 20 10 0 0 2 4 6 8 10 IT00427 A I D=2 40 ID=2A =4.0V , V GS I D=4A 30 20 10 0 --50 --25 Gate-to-Source Voltage, VGS – V Ambient Temperature, Ta – °C 0 25 50 75 100 125 150 IT00428 No.6267-2/4 FTD2014 100 | yf s | - ID VDS=10V 7 5 3 2 10 7 5 3 2 C 25° °C --25 Ta= C 75° 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.2 0.3 IF -- VSD VGS=0 Forward Transfer Admittance, | yfs | – S Forward Current, IF – A 1.0 0.1 0.001 2 3 5 7 1.0 2 3 5 Drain Current, ID – A 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16 10 IT00429 7 0.4 75 °C 25° C --25 °C 0.6 Ta = 0.5 0.7 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD – V 10 IT00430 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS – V VGS -- Qg VDS=10V ID=4A 9 8 7 6 5 4 3 2 1 0 0 Ciss, Coss, Crss – pF Ciss Coss Crss 18 20 5 10 15 20 25 IT00432 Drain-to-Source Voltage, VDS – V 1000 7 5 IT00431 100 7 5 3 2 Total Gate Charge, Qg – nC SW Time -- ID VDD=10V VGS=4V Drain Current, ID – A td(off) tf ASO IDP ID