FTD2017

Ordering number:ENN6361 N-Channel Silicon MOSFET FTD2017 Load Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2017] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Conditions 0.1 Specifications 1.0 0.5 1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Ratings 20 ±10 5 20 0.8 1.3 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Conditions Ratings min 20 1 ±10 0.4 11.2 16 17 20 1500 350 230 23 29 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : D2017 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2502 No.6361–1/4 FTD2017 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=5A, VGS=0 VDS=10V, VGS=10V, ID=5A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 19 190 90 160 42 4 8 0.8 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=10V 4V 0V VIN VIN ID=5A RL=2Ω Electrical Connection D2 S2 S2 G2 PW=10µs D.C.≤1% D G VOUT P.G 50Ω S FTD2017 D1 S1 S1 G1 10 ID -- VDS 3.5V 3.0V 2.5V 10 9 8 ID -- VGS VDS=10V 9 8 4.0V Drain Current, ID – A 2.0V 7 6 5 4 3 2 1 0 0 0.1 1.5V Drain Current, ID – A 7 6 5 4 3 2 Ta= 7 VGS=1.0V 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 --2 5 1.4 °C 1.6 25°C 1.8 5°C 2.0 Drain-to-Source Voltage, VDS – V 60 IT00922 Gate-to-Source Voltage, VGS – V 50 IT00923 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 50 40 40 30 30 ID=2A 5A 20 A, VG I D=2 2.5V S= 20 =4.0V , V GS I D=5A 10 10 0 0 2 4 6 8 10 12 IT00924 0 --50 --25 Gate-to-Source Voltage, VGS – V Ambient Temperature, Ta – °C 0 25 50 75 100 125 150 IT00925 No.6361-2/4 FTD2017 Forward Transfer Admittance, | yfs | – S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 yfs -- ID VDS=10V 10 7 5 3 2 IF -- VSD VGS = 0 Forward Current, IF – A = Ta 5°C --2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 C 25° 75 °C 0.1 7 5 3 2 0.01 0.001 2 3 Ta= 75° C 0.3 0.4 5 70.01 23 5 7 0.1 23 5 7 1.0 23 Drain Current, ID – A 1000 7 5 5 7 10 IT00926 0.001 0.2 25° C --25 °C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD – V 10000 IT00927 SW Time -- ID VDD=10V VGS=4V td(off) tf td(on) tr Ciss, Coss, Crss -- VDS f=1MHz 7 5 3 2 Switching Time, SW Time – ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 2 3 5 7 Ciss, Coss, Crss – pF Ciss 1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16 18 20 Coss Crss 1.0 10 Drain Current, ID – A 10 IT00928 100 7 5 3 2 Drain-to-Source Voltage, VDS – V IT00929 VGS -- Qg VDS=10V ID=5A ASO IDP=20A ID=5A Gate-to-Source Voltage, VGS – V 9 8 7 6 5 4 3 2 1 0 0