FTD2019A

Ordering number : ENN7911A FTD2019A FTD2019A Features • • • • N-Channel Silicon MOSFET Transistor Load Switching Applications Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm)1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings 30 ±12 6 40 1.3 1.4 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS= ±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=4V ID=3A, VGS=3.1V ID=3A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 ±10 0.5 7.8 13 19 21 23 1430 195 190 26 32 34 1.3 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF Marking : D2019A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61005PA MS IM TB-00001472 / 93004 TS IM TB-00000046 No.7911-1/4 FTD2019A Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=6A VDS=10V, VGS=4V, ID=6A VDS=10V, VGS=4V, ID=6A IS=6A, VGS=0V Ratings min typ 24 165 110 130 19 3.2 4.5 0.83 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7006-002 3.0 Electrical Connection 8 7 6 5 8 5 0.95 0.65 0.425 0.95 1 4 0.25 1.0 0.125 0.05 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Top view 1 2 3 4 Switching Time Test Circuit VIN 4V 0V VIN PW=10µs D.C.≤1% ID=6A RL=2.5Ω VDD=15V 6.4 4.5 D 0.5 VOUT G FTD2019A P.G 50Ω S No.7911-2/4 FTD2019A 6 ID -- VDS 5.0V 8 ID -- VGS VDS=10V 2.5 V 7 6 5 4 3 2 1 4.0V 5 Drain Current, ID -- A 3.0 V 4 3 Drain Current, ID -- A 2 1 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS -- V 60 IT07368 40 Gate-to-Source Voltage, VGS -- V --25°C VGS=1.5V Ta=7 5°C 25°C IT07369 RDS(on) -- VGS RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 55 50 45 40 35 30 25 20 15 10 0 2 4 6 8 10 IT07370 35 6A ID=3A 30 25 20 5V =2. GS .1V ,V 3A =3 I D= , V GS 3A V I D= =4.0 , VGS 6A I D= 15 10 --75 --50 --25 0 25 50 75 100 125 150 175 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT07371 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 3 2 VDS=10V 3 2 1.0 7 5 3 2 0.1 0.01 = Ta 5°C --2 °C 75 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 10000 7 5 5 7 10 IT07372 0.01 0.3 0.4 0.5 75 °C 25 °C --2 5°C 0.6 0.7 °C 25 Source Current, IS -- A 10 7 5 Ta = 0.8 0.9 1.0 IT07373 SW Time -- ID VDD=15V VGS=4V Ciss, Coss, Crss -- pF 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 3 2 1000 7 5 3 2 100 7 5 3 2 10 0.001 2 3 5 70.01 23 5 7 0.1 Ciss 1000 7 5 3 2 td (off) tf tr td(on) Coss Crss 100 23 5 7 1.0 23 5 7 10 IT07374 0 5 10 15 20 25 30 IT09859 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No.7911-3/4 FTD2019A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 16 18 20 VGS -- Qg VDS=10V ID=6A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=40A 1m s 10