FTD2022

Ordering number:ENN6462 N-Channel Silicon MOSFET FTD2022 Load Switching Applications Features · Low ON resistance. · 4V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2022] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 30 ±20 4.5 20 0.8 1.3 150 –55 to +150 Unit V V A A W W Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) 0.1 Specifications 1.0 0.5 1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=4.5A ID=4.5A, VGS=10V ID=4A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 5.6 8 26 39 530 170 90 34 55 Conditions Ratings min 30 1 ±10 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : D2022 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30100TS (KOTO) TA-2670 No.6462–1/4 FTD2022 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=4.5A, VGS=0 VDS=10V, VGS=10V, ID=4.5A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 9 73 41 54 10 1.5 1.0 0.79 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=15V 10V 0V Vin Electrical Connection D2 S2 S2 G2 ID=4.5A RL=3.33Ω Vin PW=10µs D.C.≤1% D G VOUT P.G 50Ω S FTD2022 D1 S1 S1 G1 (Top view) 10 ID -- VDS 10.0V 10 9 8 ID -- VGS VDS=10V 8.0V V 8 6.0 5V 9 Drain Current, ID – A V Drain Current, ID – A 4.5 3. 7 6 5 4 3 2 1 0 0 3.0 V 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 Ta= 7 VGS=2.5V 25° 2.5 3.0 C 5°C --25° C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3.5 4.0 Drain-to-Source Voltage, VDS – V 60 55 IT00557 Gate-to-Source Voltage, VGS – V 60 IT00558 RDS(on) -- VGS Ta=25°C RDS(on) -- Ta 4. S= , VG 5V Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 50 ID=4.5A 4.0A 40 4. I D= 0A 30 I D= , VG 4.5A 10. S= 0V 20 10 0 --50 --25 Gate-to-Source Voltage, VGS – V IT00559 Ambient Temperature, Ta – °C 0 25 50 75 100 125 150 IT00560 No.6462-2/4 FTD2022 Forward Transfer Admittance, | yfs | – S 100 7 5 3 yfs -- ID VDS=10V 10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF – A 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00561 25° C Ta 5°C =--2 1.0 7 5 3 2 0.1 7 5 3 2 75°C Ta=7 5°C 25°C 0.5 0.01 7 5 3 2 0.001 0.2 0.3 0.4 0.6 --25° 0.7 C 0.8 0.9 1.0 1.1 1.2 Drain Current, ID – A 1000 7 5 Diode Forward Voltage, VSD – V 10 IT00562 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS – V VGS -- Qg VDS=10V ID=4.5A Ciss 9 8 7 6 5 4 3 2 1 Ciss, Coss, Crss – pF 3 2 Coss 100 7 5 3 2 Crss 10 0 5 10 15 20 25 30 IT00563 0 0 1 2 Drain-to-Source Voltage, VDS – V 1000 7 5 Total Gate Charge, Qg – nC 3 4 5 6 7 8 9 10 IT00564 SW Time -- ID VDD=15V VGS=10V Drain Current, ID – A Switching Time, SW Time – ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=20A ID=4.5A