FTD7011

Ordering number : ENA1316 FTD7011 SANYO Semiconductors DATA SHEET FTD7011 Features • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-reisistance. 1.8V drive. Mount heigt 1.1mm. Coposite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm2×0.8mm) 1unit When mounted on ceramic substrate (1000mm2×0.8mm) Conditions Ratings --12 ±10 -7 --30 1.2 1.3 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | Conditions ID=- 1mA, VGS=0V VDS=- 8V, VGS=0V VDS=- 12V, VGS=0V VGS=±8V, VDS=0V VDS=- 6V, ID=- 1mA VDS=- 6V, ID=- 6A --0.4 10 18 Ratings min --12 -1 --10 ±10 --1.3 typ max Unit V μA μA μA V S Marking : D7011 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 91008PA TI IM TC-00001562 No. A1316-1/4 FTD7011 Continued from preceding page. Parameter Symbol RDS(on)1 Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=- 3A, VGS=- 4.5V ID=- 1.5A, VGS=- 2.5V ID=- 0.5A, VGS=- 1.8V VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--7A VDS=--6V, VGS=--4.5V, ID=--7A VDS=--6V, VGS=--4.5V, ID=--7A IS=--7A, VGS=0V Ratings min typ 14 20 32 1780 540 390 22 170 145 128 18 2.8 4.9 --0.78 --1.2 max 19 28 56 Unit mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7006A-002 0.9 5 3.0 8 5 0.5 0.125 Electrical Connection 8 7 6 5 1 0.95 4 0.25 0.65 0.05 1.0 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Top view 1 2 3 4 Switching Time Test Circuit VIN VDD= --6V 0V --4.5V 0.425 6.4 4.5 VIN PW=10μs D.C.≤1% G D ID= --7A RL=0.86Ω VOUT P.G 50Ω S FTD7011 No. A1316-2/4 FTD7011 --8.0V --6.0V --7 --6 ID -- VDS --4.5 --2.5 V V --10 --9 --8 ID -- VGS VDS= --6V --1.8 V Drain Current, ID -- A --5 --4 --3 --2 --1 Drain Current, ID -- A --7 --6 --5 --3 --2 Ta=7 5°C 0 --0.5 --1.5V --4 VGS= --1.2V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1 0 25 °C --25° C --1.0 --1.5 --2.0 --2.5 IT13986 Drain-to-Source Voltage, VDS -- V 50 RDS(on) -- VGS IT13985 50 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta Ta=25°C ID= --0.5A --1.5A --3.0A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 45 40 35 30 25 20 15 10 5 0 0 --1 --2 --3 --4 --5 --6 --7 --8 45 40 35 30 25 20 15 10 5 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 --1.8 V GS= V, I D= --0.5A --1.5A , I D= --2.5V V GS= .0A I = --3 --4.5V, D V GS= Gate-to-Source Voltage, VGS -- V 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 --0.01 | yfs | -- ID C IT13987 2 --10 7 5 Ambient Temperature, Ta -- °C IS -- VSD IT13988 Forward Transfer Admittance, | yfs | -- S VDS= --6V 25° 5°C --2 a= T C 75° VGS=0V Source Current, IS -- A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 2 1000 SW Time -- ID 5 7 --10 IT13989 --0.01 0 --0.2 --0.4 Ta= 7 5°C 25°C --25° C --0.6 --0.8 --1.0 --1.2 IT13990 5 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V VDD= --6V VGS= --4.5V Ciss, Coss, Crss -- pF f=1MHz 3 2 Switching Time, SW Time -- ns 7 5 3 2 100 7 5 3 2 10 --0.01 Ciss td(off) tf 1000 7 5 3 2 Coss Crss tr td(on) 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 IT13991 100 0 --2 --4 --6 --8 --10 --12 IT13992 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A1316-3/4 FTD7011 --4.5 --4.0 --3.5 VGS -- Qg VDS= --6V ID= --7A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --30A PW≤10μs 10 ID= --7A DC op era ms 1ms --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 6 8 10 12 14 16 18 10 tio 0m s n( Ta = Operation in this area is limited by RDS(on). 25 °C ) --0.01 --0.01 Ta=25°C Single pulse When mounted on ceramic substrate (1000mm2×0.8mm) 1unit 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 2 3 Total Gate Charge, Qg -- nC 1.6 PD -- Ta IT13993 Drain-to-Source Voltage, VDS -- V IT13994 Allowable Power Dissipation, PD -- W 1.4 1.3 1.2 1.0 0.8 When mounted on ceramic substrate (1000mm2×0.8mm) To t 1u al di ss 0.6 0.4 0.2 0 0 20 40 60 nit ip ati on 80 100 120 140 160 Ambient Temperature, Ta -- °C IT13995 Note on usage : Since the FTD7011 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice. PS No. A1316-4/4