FTD8007

Ordering number : ENN7921 FTD8007 N-Channel Silicon MOSFET FTD8007 Features • • • • General-Purpose Switching Device Applications Ultralow ON-resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm)1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings 30 ±12 6 40 1.1 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS= ±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=4V ID=3A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.5 9.6 16 16 20 1800 255 200 22 29 Ratings min 30 1 ±10 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : D8007 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2004 TS IM TB-00000069 No.7921-1/4 FTD8007 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=6A VDS=10V, VGS=4V, ID=6A VDS=10V, VGS=4V, ID=6A IS=6A, VGS=0 Ratings min typ 43 190 210 170 26.5 3.9 6.5 0.81 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2155A 0.95 Electrical Connection 8 0.65 8 3.0 5 0.5 76 5 0.425 1 0.25 4 (0.95) 0.125 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 1 23 4 Switching Time Test Circuit VIN 4V 0V VIN PW=10µs D.C.≤1% ID=6A RL=2.5Ω VDD=15V 0.1 1.0 4.5 6.4 D VOUT G FTD8007 P.G 50Ω S No.7921-2/4 FTD8007 5.0 4.5 4.0 ID -- VDS 4 .0 V 8 ID -- VGS VDS=10V 2.0V 7 V Drain Current, ID -- A 2.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.05 Drain Current, ID -- A 1.5 V 6 5 4 3 2 1 Ta= 25 75°C °C 0.4 0.6 0.8 1.0 1.2 VGS=1.0V 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 0 0.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS -- V 50 IT07338 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 40 --25°C IT07339 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 IT07340 35 30 25 20 15 10 5 0 --75 ID=3A 6A 2.5V S= A, VG I D=3 V =4.0 , VGS =6A ID --50 --25 0 25 50 75 100 125 150 175 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IT07341 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 VDS=10V Forward Drain Current, IF -- A °C 25 °C -25 °C =75 Ta 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 3 2 5 7 10 IT07342 0.001 0.1 75 ° 25 C --25 °C °C Ta = 0.9 1.0 SW Time -- ID 7 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT07343 Switching Time, SW Time -- ns 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0.001 2 3 5 70.01 23 VDD=15V VGS=4V Ciss, Coss, Crss -- pF 5 3 2 Ciss 1000 7 5 3 2 td(off) tf tr Coss Crss td(on) 5 7 0.1 23 5 7 1.0 23 5 7 10 IT07344 100 0 1 2 3 4 5 6 7 8 9 10 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V IT07345 No.7921-3/4 FTD8007 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 IT07346 VGS -- Qg VDS=10V ID=6A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=40A 1m s