FTS2001

Ordering number:EN5694 N-Channel Silicon MOSFET FTS2001 DC-DC Converter Applications Features · Low ON resistance. · 2.5V drive. · Mount height 1.1mm. Package Dimensions unit:mm 2147 3.0 0.975 0.65 0.95 [FTS2001] 8 5 0.5 1 4 0.25 0.125 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.1 1:Drain 2:Source 3:Source 4:Gate 5:Drain 6:Source 7:Source 8:Drain SANYO:SOP8 4.5 1.0 1.2max 0.95 6.4 Ratings 20 ±10 5 30 1.5 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta=25˚C Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source "Miller" Charge Gate-to-Drain Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=5A, VGS=0 VDS=10V, VGS=10V, ID=5A ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit 0.4 9 15 23 32 750 520 300 20 200 150 150 30 5 7 1.0 1.2 30 46 Conditons Ratings min 20 100 ±10 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61598TS (KOTO) TA-1232 No.5694-1/3 FTS2001 Switching Time Test Circuit 4V 0V VIN VIN PW=10µs D.C.≤1% VDD=10V ID=5A RL=2Ω D VOUT G FTS2001 P.G 50Ω S 8 I D - VDS 6V 4V 3V 2.5 V 2V 8V 10 9 8 I D - VGS VDS =10V 7 Drain Current, I D – A Drain Current, I D – A 6 5 4 3 2 1 1.5V 7 6 5 25˚C 0.4 0.6 0.8 1.0 1.2 1.4 –V 4 3 2 VGS=1V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0 0 0.2 1.6 1.8 Drain-to-Source Voltage, VDS – V Static Drain-to-Source ON-State Resistance, RDS (on) – mΩ 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 23 5 7 10 2 3 5 7 100 Gate-to-Source Voltage, VGS 60 | yfs | - I D VDS=10V R DS(on) - VGS Tc=25˚C | yfs | – S 50 Forward Transfer Admittance, = Ta -2 5˚C 75 25 ˚C ˚C ID=5A 40 2A 30 20 10 0 0 1 2 3 4 5 6 7 8 Ta = 9 - 25 ˚C 10 Drain Current, ID – A Static Drain-to-Source ON-State Resistance, RDS (on) – mΩ 80 70 60 50 40 30 20 10 0 -60 Gate-to-Source Voltage, VGS 10 7 VGS=0 5 – V R DS(on) - Tc I F - VSD Forward Current, IF – A 3 2 1.0 7 5 3 2 Ta =7 5 25˚C 2.5V ,VGS = ID =2A V GS =4 ID =5A,V 3 2 -40 -20 0 20 40 60 80 100 120 140 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Case Temperature, Tc – ˚C Diode Forward Voltage, VSD – V No.5694-2/3 - 25˚C 0.1 7 5 ˚C 75˚C FTS2001 10000 7 5 Ciss,Coss,Crss - VDS f = 1MHz 10 VGS - Q g VDS=10V 9 ID =5A 8 7 6 5 4 3 2 1 Ciss,Coss,Crss – pF 3 2 1000 7 5 3 2 100 0 Ciss Coss Crss Gate-to-Source Voltage, VGS – V 2 4 6 8 10 12 14 16 18 20 0 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS – V 1000 7 5 3 2 100 7 5 3 2 10 7 0.1 Total Gate Charge, Qg – nC SW Time - I D VDD =10V VGS = 4V Switching Time, SW Time – ns Drain Current, I D – A tf td (of f) ,,,,,, ,,,,,, ,,,,,, 5 3 2 ASO 100 µs 1m 10m s I DP = 3 0 A s 10 7 ID=5A 5 3 2 tr 10 0m s 1.0 7 Operation in this area 5 is limited DC op era by RDS(on). Ta= 25˚C tio n t d(on) 3 2 2 3 5 7 1.0 2 3 5 7 10 2 0.1 1pulse 7 Mounted on ceramic board (1000mm2×0.8mm) 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, I D – A 2.0 Drain-to-Source Voltage, VDS – V PD - Ta Allowable Power Dissipation, PD – W 1.5 M ou nte do nc 1.0 era mi cb oa rd (1 00 0m 0.5 m2 ×0 .8m m) 0 0 20 40 60 80 100 120 140 160 Storage Temperature, Ta – ˚C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 1998. Specifications and information herein are subject to change without notice. PS No.5694-3/3