FTS2012

Ordering number:ENN6360 N-Channel Silicon MOSFET FTS2012 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 4V drive. · Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS2012] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 0.125 7 : Source 8 : Drain SANYO : TSSOP8 4.5 Conditions 6.4 Ratings 30 ±20 8 32 1.3 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=10V ID=4A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 9.8 14 14 22 1550 350 220 19 31 Conditions Ratings min 30 1 ±10 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : S2012 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-1937 No.6360-1/4 FTS2012 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A IS=8A, VGS=0 Ratings min typ 12 210 110 95 40 5 7 0.82 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=15V VIN 10V 0V VIN PW=10µs D.C.≤1% ID=8A RL=1.87Ω D VOUT G P.G 50Ω FTS2012 S 15 ID -- VDS 10.0V 16 14 12 10 8 6 4 2 ID -- VGS VDS=10V 12 Drain Current, ID – A VGS=2.5V 9 6 Drain Current, ID – A 6.0V 3.5V 4.0V 3.0 V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00733 Drain-to-Source Voltage, VDS – V 60 IT00732 Gate-to-Source Voltage, VGS – V 40 35 RDS(on) -- VGS Ta=25°C RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) – mΩ Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 50 30 25 20 15 10 5 0 --50 40 30 8A ID=4A 4A I D= =4V , VGS 20 , VG I D=8A 0V S=1 10 0 0 2 4 6 8 10 12 14 16 18 20 --25 0 25 50 75 100 --25 125 °C 3 Ta= 7 5°C 25°C 150 IT00735 Gate-to-Source Voltage, VGS – V IT00734 Ambient Temperature, Ta – ˚C No.6360-2/4 FTS2012 Forward Transfer Admittance, | yfs | – S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 yfs -- ID VDS=10V 5 -- 2 Ta= °C Forward Current, IF – A 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IF -- VSD VGS=0 °C 75 25 °C 0.1 7 5 3 2 0.01 0.001 2 3 5 7 0.01 2 3 5 70.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID – A 10000 7 5 2 3 57 100 IT00736 0.01 7 5 3 2 0.001 0.2 Ta= 75° C 25° C 0.3 0.4 --25 °C 0.6 0.5 0.7 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD – V 10 IT00737 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS – V VGS -- Qg VDS=10V ID=8A 9 8 7 6 5 4 3 2 1 Ciss, Coss, Crss – pF 3 2 Ciss 1000 7 5 3 2 Coss Crss 100 0 5 10 15 20 25 30 IT00738 0 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS – V 1000 7 5 Total Gate Charge, Qg – nC 100 7 5 3 2 IT00739 SW Time -- ID VDD=15V VGS=10V Drain Current, ID – A ASO IDP=32A ID=8A 10