FTS2022

Ordering number : ENN7700 FTS2022 FTS2022 Features • • • • N-Channel Silicon MOSFET DC / DC Converter Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Mounting height 1.1mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm) 1unit Conditions Ratings 30 ±20 7 28 1.3 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) 1 RDS(on) 2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=10V ID=4A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 ±10 1.0 7.7 11 19 27 750 300 120 25 38 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : S2022 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61504PA TS IM TA-2610 No.7700-1/4 FTS2022 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A IS=7A, VGS=0 Ratings min typ 10 147 53 58 14 2.5 1.3 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2147A 0.65 Switching Time Test Circuit 0.95 3.0 0.425 VDD=15V 10V 0V VIN VIN ID=7A RL=2.1Ω 8 5 0.5 4.5 6.4 1 0.25 4 0.95 0.125 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8 PW=10µs D.C.≤1% D G VOUT P.G 50Ω S FTS2022 0.1 1.0 10 ID -- VDS 4.5V 8.0V 12 ID -- VGS Ta= --2 5°C 75°C 25°C 5°C Ta= 7 0.5 1.0 1.5 2.0 VDS=10V 9 8 10 10.0V Drain Current, ID -- A 6.0V 7 6 5 4 3 2 1 0 0 3.0 V Drain Current, ID -- A 3.5 V 8 6 VGS=2.5V 4 2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 --2 2.5 5° C 25° 3.0 C 3.5 4.0 Drain-to-Source Voltage, VDS -- V 60 IT00524 Gate-to-Source Voltage, VGS -- V 60 IT00525 RDS(on) -- VGS Ta=25°C RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 55 50 40 ID=4A 7A 30 A, I D=4 =4.5 VGS V V 20 10.0 V S= =7A, G ID 10 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V IT06786 Ambient Temperature, Ta -- °C IT06787 No.7700-2/4 FTS2022 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00528 yfs -- ID VDS=10V Forward Drain Current, IF -- A Forward Transfer Admittance, yfs -- S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IF -- VSD VGS=0 --2 Ta= C 75° 5°C °C 25 0.01 7 5 3 2 0.001 0.2 5°C Ta= 7 25° C 0.5 0.3 0.4 -25° 0.6 0.7 C 0.8 0.9 1.0 1.1 1.2 Drain Current, ID -- A 1000 7 5 SW Time -- ID VDD=15V VGS=10V 10000 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT00529 Switching Time, SW Time -- ns 3 2 Ciss, Coss, Crss -- pF 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 td(off) tf tr 1000 7 5 3 2 100 7 5 3 2 10 Ciss Coss Crss td(on) 5 7 1.0 2 3 5 Drain Current, ID -- A 10 9 7 10 IT00532 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 5 10 15 20 25 30 IT00530 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=7A Drain Current, ID -- A IDP=28A 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 ID=7A