FTS2057

Ordering number : EN8989 FTS2057 SANYO Semiconductors DATA SHEET FTS2057 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=96mΩ(typ.) Input capacitance Ciss=1030pF(typ.) 4V drive Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) Conditions Ratings 100 ±20 3 12 1.3 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7006A-009 0.9 5 3.0 8 5 0.5 0.125 Product & Package Information • Package : TSSOP8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking LOT No. 6.4 4.5 TL S2057 1 0.95 4 0.25 0.65 0.05 1.0 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : No Contact 6 : No Contact 7 : No Contact 8 : Drain SANYO : TSSOP8 Electrical Connection 1, 8 0.425 4 2, 3 http://semicon.sanyo.com/en/network 82411PE TKIM TC-00002632 No.8989-1/4 FTS2057 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=3A, VGS=0V VDS=50V, VGS=10V, ID=3A VDS=20V, f=1MHz Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=10V ID=1.5A, VGS=4.5V ID=1.5A, VGS=4V Ratings min 100 1 ±10 1.2 5.2 96 105 110 1030 80 42 13 See specified Test Circuit. 13 62 24 19.4 2.7 4.0 0.81 1.2 125 150 155 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 10V 0V VIN VDD=50V ID=3A RL=16.7Ω D VOUT VIN PW=10μs D.C.≤1% G FTS2057 P.G 50Ω S 3.0 ID -- VDS 6.0V V 10.0V 2.5 3.0 V 3.5 Ta=25°C 6 ID -- VGS VDS=10V V 5 4.0 V Drain Current, ID -- A 16.0 4.5 V 2.0 2.8V Drain Current, ID -- A 4 1.5 3 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 2.5 --25 °C 3.0 25 °C 0.5 VGS=2.5V 1 Ta= 75°C 1.0 2 3.5 IT16576 Drain-to-Source Voltage, VDS -- V IT16575 Gate-to-Source Voltage, VGS -- V No.8989-2/4 FTS2057 200 RDS(on) -- VGS Ta=25°C ID=1.5A 3.0A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 160 140 120 100 80 60 0 200 150 100 = V GS = , ID .0V 4 A 1.5 VG =4 S =1 , ID .5V .5A 50 =1 VGS =3. , ID 0.0V 0A 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID C 25° IT16577 10 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT16578 Forward Transfer Admittance, | yfs | -- S 7 5 3 2 VDS=10V C 25° = -Ta C 75° VGS=0V Source Current, IS -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT16580 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 1000 7 5 SW Time -- ID 10 IT16579 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 7 0.001 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V Ta= 7 7 5°C 1.0 --25° C 25°C VDD=50V VGS=10V f=1MHz Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT16581 Ciss td(off) tf td(on) tr Coss Crss 0 10 20 30 40 50 60 70 80 90 100 10 Drain Current, ID -- A 10 VGS -- Qg Drain-to-Source Voltage, VDS -- V 100 7 5 3 2 ASO IT16582 Gate-to-Source Voltage, VGS -- V VDS=50V ID=3A Drain Current, ID -- A 8 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IDP=12A (PW≤10μs) ID=3A DC op 1 1 ms 10 0ms 0m s 100 μs 6 4 tio n Operation in this area is limited by RDS(on). era 2 0 0 2 4 6 8 10 12 14 16 18 20 0.01 7 5 Ta=25°C 3 Single pulse 2 When mounted on ceramic substrate (2000mm2×0.8mm) 0.001 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 23 Total Gate Charge, Qg -- nC IT16583 Drain-to-Source Voltage, VDS -- V 5 71000 IT16584 No.8989-3/4 FTS2057 1.4 PD -- Ta Allowable Power Dissipation, PD -- W 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16585 Note on usage : Since the FTS2057 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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