FW103

Ordering number : EN5305A P-Channel Silicon MOSFET FW103 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance unit: mm • Ultrahigh-speed switching. 2129-SOP8 • Composite type with two 4V-drive P-channel MOSFETs facilitating high-density mounting. • Matched pair capability. [FW103] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions Ratings 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) –30 ±20 –3 –32 1.7 2.0 150 –55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter D-S Breakdown Voltage Zero-Gate-Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) RDS(on) Ciss Coss Crss Conditions ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–3A ID=–3A, VGS=–10V ID=–3A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz Ratings min –30 typ max –100 ±10 –2.5 4 95 150 550 370 70 125 205 Unit V µA µA V S mΩ mΩ pF pF pF –1.0 2 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN O1397TS (KOTO) TA-0255 No.5305-1/3 FW103 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol td(on) tr td(off) tf VSD Conditions See specified Test Circuit. ″ ″ ″ IS=–3A, VGS=0 Ratings min typ 20 110 330 170 –1.0 max Unit ns ns ns ns V –1.2 Switching Time Test Circuit Electrical Connection (Top view) 3 2 IDP 10µs 10 Allowable Power Dissipation, PD(FET2) – W Drain Current, I D – A 1.0 ac era 7 mi cb 5 Operation in this area oar d( is limited by RDS(on). 3 10 00 2 mm 2 ×0 Ta=25°C .8m 0.1 1pulse m) 7 1unit 5 23 5 7 1.0 23 5 7 10 2 ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, 7 5 10 7 5 3 2 ASO 1.8 1.7 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 P D (FET 2) – P D (FET1) M ou nte 1m 10 ms 0µ s s do na ce ram ID ic Mo bo un ted 10 0m ard on s (1 00 0m m2 ×0 .8m m) 3 5 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Drain-to-Source Voltage, VDS – V 2.4 Allowable Power Dissipation, PD(FET1) – W P D – Ta Allowable Power Dissipation, PD – W 2.0 1.7 1.6 To tal di ss ip 1.2 Pe ru nit ati on dis 0.8 sip ati on 0.4 0 0 Mounted on a ceramic board (1000mm2×0.8mm) 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – °C No.5305-2/3 FW103 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property lose. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 1997. Specifications and information herein are subject to change without notice. No.5305-3/3