FW213

Ordering number:EN5908 P-Channel Silicon MOSFET FW213 DC-DC Converter Applications Features · Low ON resistance. · 4V drive. Package Dimensions unit:mm 2129 [FW213] 8 5 0.3 4.4 6.0 0.2 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 Conditions Ratings 30 ±20 7 Unit V V A A W W PW≤10µs, duty cycle≤1% 52 1.7 2.0 150 –55 to +150 Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 7 10 25 37 700 380 180 32 50 Conditions Ratings min 30 100 ±10 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1498TS (KOTO) TA-1283 No.5908-1/4 FW213 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=5A, VGS=0 VDS=10V, VGS=10V, ID=5A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 15 180 90 80 22 5 6 1.0 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VIN VDD=10V ID=5A RL=2Ω 10V 0V VIN PW=10µs D.C.≤1% D VOUT G P.G 50Ω FW213 S 8 I D - VDS 6V 4 3.5 V V 10 9 8 I D - VGS VDS =10V 8V 7 Drain Current, ID – A Drain Current, ID – A 6 5 4 3 2 1 0 0 10V 3V 7 6 5 4 3 2 1 75˚C 0.5 1.0 1.5 2.0 2.5V VGS=2V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 25˚C 2.5 Ta = 3.0 Drain-to-Source Voltage,VDS – V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Gate-to-Source Voltage, VGS – V VDS=10V 60 | yf s | - I D Static Drain-to-Source On-State Resistance, RDS (on) – mΩ R DS(on) - VGS Tc=25˚C Forward Transfer Admittance, | yfs | – S 50 ˚C 25 =C Ta 75˚ 25˚C 40 30 ID=5A 20 10 0 0 2 4 6 8 10 12 14 16 18 25˚C 20 Drain Current, ID – A Gate-to-Source Voltage, VGS – V No.5908-2/4 FW213 100 90 R DS(on) - Tc 10 7 5 I F - VSD VGS= 0 Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 70 60 50 40 30 20 10 0 -60 -40 -20 0 20 40 60 80 100 120 140 Forward Current, IF – A 80 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 5˚C 25˚C ID =5A ,VGS = 4V V ID =5A,VG S =10 Case Temperature, Tc – ˚C 10000 7 5 3 2 Diode Forward Voltage, VSD – V f = 1MHz 10 Ciss,Coss,Crss - VDS VGS - Qg VDS=10V 9 ID =5A 8 7 6 5 4 3 2 1 1000 7 5 3 2 100 7 5 3 2 10 0 5 10 15 20 25 Ciss Coss Crss Gate-to-Source Voltage, VGS – V Ciss,Coss,Crss – pF 30 0 0 5 10 15 - 25˚C 20 Ta =7 25 Drain-to-Source Voltage,VDS – V 1000 Total Gate Charge, Qg – nC 100 7 I DP =52A 5 3 2 SW Time – I D VDD =15V 7 VGS=10V 5 3 2 Switching Time, SW Time – ns Drain Current, ID – A t d(off) 100 7 5 3 2 10 0.1 10 7 5 3 2 ,,,,,, ,,,,,, ,,,,,, ,,,,,, I D =7A Ta=25˚C ASO 10 1m 0µs s 10m s tr 100 ms tf 1.0 7 5 Operation in this area 3 is limited by RDS(on). 2 DC op era tio n t d(on) 2 3 5 7 1.0 2 3 5 7 10 2 0.1 1pulse 7 1unit 5 Mounted on a ceramic board (1000mm2×0.8mm) 3 23 5 7 1.0 2 3 5 7 10 2 3 5 Drain Current, ID – A Allowable Power Dissipation, PD (FET2) – W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS – V 2.5 P D (FET2) - P D (FET1) M ou P D - Ta nte Allowable Power Dissipation, PD – W do 2.0 1.7 na ce ram ic bo 1.5 ard To tal (1 00 Di ss 0m ip m2 ×0 ati 1.0 .8m 1u on m) nit 0.5 0 0 Mounted on a ceramic board( 1000mm2×0.8mm) 20 40 60 80 100 120 140 160 Allowable Power Dissipation, PD (FET1) – W Ambient Temperature, Ta – ˚C No.5908-3/4 FW213 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 1998. Specifications and information herein are subject to change without notice. PS No.5908-4/4