FW216

Ordering number : ENA0074 FW216 N-Channel Silicon MOSFET FW216 Features • • General-Purpose Switching Device Applications Motor drive applications. 4.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (2000mm2!0.8mm) 1unit, PW≤10s Mounted on a ceramic board (2000mm2!0.8mm), PW≤10s Conditions Ratings 35 ±20 3.5 14 1.6 2.2 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=3.5A, VGS=10V ID=2A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 35 1 ±10 1.5 2.4 4 70 140 260 65 40 9 8 19 8 90 196 2.5 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : W216 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83005PA MS IM TB-00001339 No. A0074-1/4 FW216 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A IS=3.5A, VGS=0V Ratings min typ 6 1.2 1.0 0.88 1.2 max Unit nC nC nC V Package Dimensions unit : mm 7005-003 8 5 0.3 Switching Time Test Circuit VIN 10V 0V VIN VDD=15V ID=3.5A RL=4.3Ω 4.4 6.0 PW=10µs D.C.≤1% D VOUT 1 4 0.43 0.2 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 G FW216 P.G 50Ω 0.595 1.27 0.1 1.5 1.8 MAX S 3.5 ID -- VDS 8.0V 6.0V 4.5 V 4.0 V 10.0 V 5.5 5.0 4.5 ID -- VGS Ta= -0 1 2 3 3.0 Drain Current, ID -- A Drain Current, ID -- A 2.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 2.0 3.0V 1.5 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VGS=2.5V 0 0.8 0.9 1.0 25° 5°C --25°C C 4 1.0 Ta= 7 25° 75°C C 5 25°C VDS=10V 6 IT10126 Drain-to-Source Voltage, VDS -- V 300 IT10125 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 300 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 200 200 3.5A 150 150 2. I D= =4.5 , VGS 0A V ID=2.0A 100 100 .5A I D=3 =10.0 , V GS V 50 50 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT10127 Ambient Temperature, Ta -- °C IT10128 No. A0074-2/4 FW216 10 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IS -- VSD VGS=0V °C 25 °C -25 C =75° Ta 1.0 7 5 3 2 0.1 0.01 Source Current, IS -- A 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT10129 0.01 0.2 0.4 Ta=7 5°C 0.6 25°C --25°C 0.8 1.0 1.2 1.4 IT10130 Drain Current, ID -- A 100 7 SW Time -- ID 7 5 3 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=15V VGS=10V Ciss td(off) tf Ciss, Coss, Crss -- pF 2 10 7 5 3 2 1.0 0.1 td(on) 100 7 5 3 2 Coss tr Crss 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 10 IT10131 3 2 10 7 5 7 0 5 10 15 20 25 30 35 IT10132 Drain-to-Source Voltage, VDS -- V VGS -- Qg ASO IDP=14A 10 ≤10µs 1m Gate-to-Source Voltage, VGS -- V VDS=10V ID=3.5A 8 Drain Current, ID -- A ID=3.5A 10 DC 10 0µ s 3 2 1.0 7 5 3 2 0.1 7 5 3 2 6 10 ms 0m s s 4 s era Operation in this tio area is limited by RDS(on). n op 2 0 0 1 2 3 4 5 6 7 IT10133 0.01 0.1 Ta=25°C Single pulse Mounted on a ceramic board (2000mm2 ! 0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Total Gate Charge, Qg -- nC 2.5 Mounted on a ceramic board (2000mm2 ! 0.8mm), PW≤10s Allowable Power Dissipation (FET1), PD -- W PD -- Ta Drain-to-Source Voltage, VDS -- V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT10134 PD (FET1) -- PD (FET2) Mounted on a ceramic board (2000mm2 ! 0.8mm), PW≤10s Allowable Power Dissipation, PD -- W 2.2 2.0 1.6 1.5 To t al Di ss 1.0 1u ip nit ati on 0.5 0 0 20 40 60 80 100 120 140 160 1.6 1.8 Ambient Temperature, Ta -- °C IT10135 Allowable Power Dissipation (FET2), PD -- W IT10136 No. A0074-3/4 FW216 Note on usage : Since the FW216 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2005. Specifications and information herein are subject to change without notice. PS No. A0074-4/4