FW216A

Ordering number : ENA0176A FW216A SANYO Semiconductors DATA SHEET FW216A Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance Nch : RDS(on)1=49mΩ (typ.) 4.0V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Conditions Ratings 35 ±20 4.5 18 1.6 2.2 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7072-001 4.9 8 5 0.22 Product & Package Information • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT96 • Minimum Packing Quantity : 2,500 pcs./reel Packing Type : TL Marking 0.375 1 1.27 4 0.445 0.254 (GAGE PLANE) 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOIC8 0.715 FW216 TL 6.0 3.9 A LOT No. 1.375 1.55 Electrical Connection 8 7 6 5 0.175 1 2 3 4 http://semicon.sanyo.com/en/network 31412 TKIM/20112PA TKIM TC-00002686 No. A0176-1/4 FW216A Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=4.5A, VGS=0V VDS=10V, VGS=10V, ID=4.5A VDS=10V, f=1MHz Conditions ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4.5A ID=4.5A, VGS=10V ID=2A, VGS=4.5V ID=2A, VGS=4.0V Ratings min 35 1 ±10 1.5 2.6 49 80 100 280 60 30 6 See specified Test Circuit. 21 20 10 5.6 1.2 0.8 0.85 1.2 64 112 140 2.5 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 10V 0V VIN VDD=15V VIN PW=10μs D.C.≤1% G D ID=4.5A RL=3.3Ω VOUT P.G FW216A 50Ω S 4.5 ID -- VDS 10.0V 8.0V 9 8 7 ID -- VGS VDS=10V 4.5V 6.0V 4.0 3.5 4.0 V Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Drain Current, ID -- A 6 5 4 2 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 25 °C 2.5 3.0 --2 5 °C 4.0 Ta= 75° C VGS=3.0V 3 3.5 4.5 5.0 Drain-to-Source Voltage, VDS -- V IT16697 Gate-to-Source Voltage, VGS -- V IT16698 No. A0176-2/4 FW216A 300 RDS(on) -- VGS Ta=25°C ID=2.0A 4.5A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 150 200 150 100 100 50 A =2.0 V, I D =4.0 A VGS =2.0 V, I D =4.5 VGS .5A , I =4 10.0V D V GS= 50 0 0 2 4 6 8 10 IT16699 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 IS -- VSD IT16700 Forward Transfer Admittance, | yfs | -- S 7 5 VDS=10V VGS=0V 2 25° C 1.0 7 5 3 2 0.1 0.01 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 100 7 SW Time -- ID 5 7 10 IT16701 0.01 0 0.2 0.4 Ta= 7 °C -25 =Ta °C 75 Source Current, IS -- A 3 3 2 5°C 25°C --25° C 0.6 0.8 1.0 1.2 IT16702 Switching Time, SW Time -- ns 5 3 2 VDD=15V VGS=10V td(off) 1000 7 5 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V f=1MHz Ciss, Coss, Crss -- pF 3 2 Ciss 10 7 5 3 2 1.0 0.1 td(on) tf 100 7 5 3 2 10 Coss Crss tr 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 9 VGS -- Qg 10 IT16703 100 7 5 3 2 7 0 10 20 30 IT16704 Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=4.5A Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT16705 IDP=18A (PW≤10μs) ID=4.5A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Operation in this area is limited by RDS(on). 10 0 1m μs 10 s 10 ms 0m s DC 10 s op er ati on 0.01 0.01 Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 100 IT16706 No. A0176-3/4 FW216A When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Allowable Power Dissipation(FET1), PD -- W 2.5 PD -- Ta 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 PD (FET1) -- PD (FET2) When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Allowable Power Dissipation, PD -- W 2.2 2.0 1.6 1.5 To t al di 1.0 1u ss nit ip ati on 0.5 0 0 20 40 60 80 100 120 140 160 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ambient Temperature, Ta -- °C IT16707 Allowable Power Dissipation(FET2), PD -- W IT16708 Note on usage : Since the FW216A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2012. Specifications and information herein are subject to change without notice. PS No. A0176-4/4