FW217A

Ordering number : EN8994A FW217A SANYO Semiconductors DATA SHEET FW217A Features • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications On-state resistance RDS(on)1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP IDP PD PT Tch Tstg Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Conditions Ratings 35 ±20 6 6.5 24 1.8 2.2 150 --55 to +150 Unit V V A A A W W °C °C Package Dimensions unit : mm (typ) 7072-001 4.9 8 5 0.22 Product & Package Information • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2,500 pcs./reel Packing Type : TL Marking 0.375 1 1.27 4 0.445 0.254 (GAGE PLANE) 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOIC8 0.715 FW217 TL 6.0 3.9 A LOT No. Electrical Connection 8 7 6 5 1.375 0.175 1.55 1 2 3 4 http://semicon.sanyo.com/en/network 31412 TKIM/22212PA TKIM TC-00002682 No.8994-1/4 FW217A Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=6A, VGS=0V VDS=20V, VGS=10V, ID=6A See specified Test Circuit. VDS=20V, f=1MHz Conditions ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=3A, VGS=4.5V Ratings min 35 1 ±10 1.7 3 30 50 470 70 35 8 34 31 30 10 2 2 0.84 1.2 39 70 2.6 typ max Unit V μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 10V 0V VIN VDD=20V VIN PW=10μs D.C.≤1% G D ID=6A RL=3Ω VOUT P.G FW217A 50Ω S 6 ID -- VDS 16.0V 10.0V 10 ID -- VGS VDS=10V 4.5 V 4.0 V 6.0V 3.5V Drain Current, ID -- A 9 8 7 6 5 4 3 5 Drain Current, ID -- A 4 3 Ta=75° C 0 1 2 3.0V 2 1 VGS=2.5V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0 3 4 5 IT16779 0 Drain-to-Source Voltage, VDS -- V IT16778 Gate-to-Source Voltage, VGS -- V 25° 2 C --25°C No.8994-2/4 FW217A 100 RDS(on) -- VGS Ta=25°C ID=3A 6A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 80 60 60 =3.0 , ID 4.5V = VGS A 40 40 =10.0 VGS =6.0A V, I D 20 20 0 0 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID IT16780 10 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT16781 Forward Transfer Admittance, | yfs | -- S 7 5 3 2 VDS=10V VGS=0V 25° C 5° --2 = Ta °C 75 C 1.0 7 5 °C 0 0.2 0.4 7 5 3 2 0.1 0.01 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT16784 0.01 0.6 0.8 1.0 1.2 IT16783 Drain Current, ID -- A 100 7 SW Time -- ID td(off) tf VDD=20V 1000 7 5 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V Ta=7 5 1.0 3 2 25°C --25°C f=1MHz Switching Time, SW Time -- ns 5 3 2 Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 1.0 0.1 td(on) tr 100 7 5 3 2 10 Coss Crss 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 9 VGS -- Qg 10 IT16784 100 7 5 3 2 7 0 5 10 15 20 25 30 35 IT16785 Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=4.5A Drain Current, ID -- A IDP=24A(PW≤10μs) ID=6A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 IT16786 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 0μ 1m s 10 s 10 ms 0m s DC 10 s op er ati on Operation in this area is limited by RDS(on). 0.01 0.01 Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 100 IT16787 No.8994-3/4 FW217A When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Allowable Power Dissipation(FET1), PD -- W 2.4 PD -- Ta 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 PD (FET1) -- PD (FET2) When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Allowable Power Dissipation, PD -- W 2.2 2.0 1.8 1.6 tal To 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 a ip ss di n tio t 100 125 150 175 IT16789 1u ni 75 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Ambient Temperature, Ta -- °C Allowable Power Dissipation(FET2), PD -- W IT16790 Note on usage : Since the FW217A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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