FW231

Ordering number:ENN6071A N-Channel Silicon MOSFET FW231 Load Switching Applications Features · Low ON resistance. · 2.5V drive. Package Dimensions unit:mm 2129 [FW231] 8 5 0.3 4.4 6.0 0.2 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 Conditions 0.1 1.8max 1 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Ratings 20 ±10 9 Unit V V A A W W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) 52 1.7 2.0 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=9A ID=9A, VGS=4V ID=2A, VGS=2.5V Conditions Ratings min 20 1 ±10 0.4 16 24 15 20 20 27 1.3 typ max Unit V µA µA V S mΩ mΩ Marking : W231 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52200TS (KOTO) TA-2076 No.6071-1/4 FW231 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=9A VDS=10V, VGS=10V, ID=9A VDS=10V, VGS=10V, ID=9A IS=9A, VGS=0 Conditions Ratings min typ 1950 550 370 24 440 200 300 60 2.8 10 0.82 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 4V 0V VIN VIN PW=10µs D.C.≤1% D Electrical Connection VDD=10V ID=9A RL=1.1Ω VOUT D1 D1 D2 D2 8 7 6 5 G P.G 50Ω S FW231 1 2 3 4 S1 G1 S2 G2 A11946 A12026 18 16 14 I D - VDS 3.5V 3.0V 2.5V 4.0V 18 16 14 12 10 8 6 4 2 ID - VGS Drain Current, ID – A 2.0V 12 10 8 6 4 2 0 1.5V Drain Current, ID – A VGS=1.0V 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 25° C 75° C Ta= -2 5 °C 1.4 1.6 1.8 Drain-to-Source Voltage, VDS – V 5 Gate-to-Source Voltage, VGS – V 60 | yfs | - I D VDS=10V Static Drain-to-Source On-State Resistance, RDS (on) – mΩ R DS(on) - VGS Ta=25°C Forward Transfer Admittance, | yfs | – S 3 2 Ta 10 7 5 3 2 25 =- °C 7 5°C 25° C 50 ID=9A 40 ID=2A 30 20 10 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0 0 2 4 6 8 10 12 Drain Current, ID – A Gate-to-Source Voltage, VGS – V No.6071-2/4 FW231 40 35 30 25 20 15 10 5 0 -50 R DS(on) - Ta 3 2 10 7 5 3 2 1.0 7 5 I F - VSD VGS=0 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Ta= 75° C 0.1 7 5 3 2 -25 0 25 50 75 100 125 150 0.01 0.2 0.3 0.4 0.5 0.6 -25° C 0.7 0.8 25° C V =2.5 ,VGS =2A ID =4V A,VGS I D=9 Forward Current, IF – A 3 2 0.9 1.0 Ambient Temperature, Ta – ˚C 10000 7 5 Diode Forward Voltage, VSD – V f=1MHz Gate-to-Source Voltage, VGS – V 10 9 8 7 6 5 4 3 2 1 Ciss, Coss, Crss - VDS VGS - Qg Ciss, Coss, Crss – pF 3 2 Ciss 1000 7 5 3 2 Coss Crss 100 0 2 4 6 8 10 12 14 16 18 20 0 0 10 20 30 40 50 60 Drain-to-Source Voltage, VDS – V 1000 7 Total Gate Charge, Qg – nC SW Time - I D VDD =10V VGS=4V Drain Current, ID – A td(off) tf 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO I DP =52A 10 Switching Time, SW Time – ns 5 3 2 10µs 1m s ID=9A DC ms 10 op era 0m s 100 7 5 3 2 tr td(on) Operation in this area is limited by RDS(on). tio n 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 0.01 0.01 Ta=25°C Single pulse 1 unit Mounted on a ceramic board (1000mm2×0.8mm) 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID – A 2.4 Drain-to-Source Voltage, VDS – V PD - Ta Allowable Power Dissipation, PD – W 2.0 1.7 1.6 To 1.2 tal 1u 0.8 Di nit ss ip ati on 0.4 0 Mounted on a ceramic board (1000mm2×0.8mm) 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C No.6071-3/4 FW231 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2000. Specifications and information herein are subject to change without notice. PS No.6071-4/4