Ordering number : ENN8361
FW232A
N-Channel Silicon MOSFET
FW232A
Features
• •
General-Purpose Switching Device Applications
2.5V drive. Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10µs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD PT Tch Tstg Duty cycle≤1% Duty cycle≤1% Mounted on a ceramic board (1500mm2!0.8mm) 1unit, PW≤10s Mounted on a ceramic board (1500mm2!0.8mm), PW≤10s Conditions Ratings 30 ±10 8 9 52 2.3 2.5 150 --55 to +150 Unit V V A A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=4V ID=4A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 ±10 0.5 8.4 14 19 23 1430 195 190 24 200 100 130 26 34 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns
Marking :W232A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PA MS IM TB-00001458 No.8361-1/4
FW232A
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=4V, ID=8A VDS=10V, VGS=4V, ID=8A VDS=10V, VGS=4V, ID=8A IS=8A, VGS=0V Ratings min typ 19 3.2 4.5 0.85 1.2 max Unit nC nC nC V
Package Dimensions unit : mm 7005-003
8 5
0.3
Electrical Connection
8
7
6
5
1
4
0.43 0.2
5.0
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1
Top view
4.4
6.0
1
2
3
4
0.595
1.27
Switching Time Test Circuit
VIN 4V 0V VIN PW=10µs D.C.≤1% VDD=15V ID=8A RL=1.875Ω VOUT
0.1
1.5 1.8 MAX
D
G
P.G
50Ω
FW232A
S
8
ID -- VDS
3.0V 4.0 V
5.0V
8
ID -- VGS
VDS=10V
7 6 5 4 3 2 1 0 0
7 6 5 4
10.0V
Drain Current, ID -- A
2.5V
Drain Current, ID -- A
Ta=7 5°C
0 0.2 0.4 0.6 0.8 1.0 1.2
VGS=1.5V
2 1 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.4
25°
1.6
C
--25°C
3
1.8
Drain-to-Source Voltage, VDS -- V
IT09730
Gate-to-Source Voltage, VGS -- V
IT09731
No.8361-2/4
FW232A
55
RDS(on) -- VGS
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=4A 8A
55 50 45 40 35 30 25 20 15 10 5 0 --60 --40 --20 0
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6
2.5V V S= =4A, G ID 4.0V , V S= I D=8A G
7
8 IT09732
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
3
yfs -- ID
Ambient Temperature, Ta -- °C
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IT09733
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
VDS=10V
2
10 7 5
3 2
25
1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
0.01 0.2
0.4
Ta= 7
5° C 25 °C --2 5°C
0.6
Ta
-25 =-
°C
°C 75 °C
Source Current, IS -- A
0.8
1.0 IT09735
Drain Current, ID -- A
2 1000
IT09734 5
Diode Forward Voltage, VSD -- V
SW Time -- ID
VDD=15V VGS=4V Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
f=1MHz
3 2
Switching Time, SW Time -- ns
7 5 3 2 100 7 5 3 2
Ciss
1000 7 5 3 2
td(off) tf
tr
td(on)
Coss
Crss
100 7
10 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 16
5 7 10 IT09736 100 7 5 3 2
0
5
10
15
20
25
30 IT09737
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=8A Drain Current, ID -- A
IDP=52A
1m
≤10µs
10 7 5 3 2 1.0 7 5 3 2
ID=8A
s
10
10
0m
ms
s
DC
Operation in this area is limited by RDS(on).
10
op
s
era
tio
n
18
20
Total Gate Charge, Qg -- nC
IT09738
0.1 7 5 Ta=25°C 3 Single pulse 2 Mounted on a ceramic board (1500mm2 ! 0.8mm) 1unit 0.01 23 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V IT09739
No.8361-3/4
FW232A
Mounted on a ceramic board (1500mm2 ! 0.8mm), PW≤10s Allowable Power Dissipation (FET1), PD -- W
3.0
PD -- Ta
2.5 2.3
PD -- PD
M ou nte
Allowable Power Dissipation, PD -- W
2.5 2.3 2.0
2.0
do
na
ce
To t
1.5
ram
al
1.5
ic
Di
t
bo
1u
1.0
ss
ard
ip
(15
ni
ati
00
on
1.0
mm
2
!0
.8m
m)
,P
W
0.5
0.5
≤1
0s
0 0 20 40 60 80 100 120 140 160
0 0 0.5 1.0 1.5 2.0 2.3 2.5 IT09743
Ambient Temperature, Ta -- °C
IT09740
Allowable Power Dissipation (FET2), PD -- W
Note on usage : Since the FW232A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice.
PS No.8361-4/4