FW282

Ordering number : ENA1549 FW282 SANYO Semiconductors DATA SHEET FW282 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD PT Tch Tstg Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Conditions Ratings 35 ±20 6 6.5 24 1.8 2.2 150 --55 to +150 Unit V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=3A, VGS=4.5V ID=3A, VGS=4V 1.5 1.8 3 28 43 52 37 61 73 Ratings min 35 1 ±10 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ Marking : W282 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 90209PA TK IM TC-00002093 No. A1549-1/4 FW282 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=10V, ID=6A IS=6A, VGS=0V Ratings min typ 470 70 35 8 34 31 30 10 2 2 0.84 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7005A-003 5.0 0.8 8 5 0.2 0.3 Electrical Connection 8 7 6 5 0.1 6.0 4.4 1 2 3 4 0.8 1 1.27 4 0.43 1.8 MAX 1.5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view Switching Time Test Circuit VIN VDD=20V ID=6A RL=3Ω D VOUT 10V 0V 0.7 VIN PW=10μs D.C.≤1% G FW282 P.G 50Ω S No. A1549-2/4 FW282 6.0V 4.5V 4 .0 V 8.0V 6 ID -- VDS 16.0V 10.0V 6 ID -- VGS VDS=10V 5 V 3.5 Ta=25°C 5 Drain Current, ID -- A 4 Drain Current, ID -- A =3.0V VGS 4 3 3 Ta=7 5°C 0 0.5 1.0 1.5 2.0 2.5 2 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 25° 3.0 3.5 C 1 1 --25°C 4.0 Drain-to-Source Voltage, VDS -- V 100 RDS(on) -- VGS IT14971 100 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta IT14972 Ta=25°C 6A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 70 60 50 40 30 20 10 0 0 2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 ID=3A 90 80 70 60 50 40 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 =3A V, I D =4.0 =3A VGS V, I D =4.5 VGS =6A V, I D =10.0 VGS 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 | yfs | -- ID IT14973 10 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT14974 Forward Transfer Admittance, | yfs | -- S VDS=10V VGS=0V = Ta -- °C 25 75 °C Source Current, IS -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 25 °C Drain Current, ID -- A 100 7 SW Time -- ID 5 7 10 IT14975 0.001 0.4 Ta= 7 0.6 --25°C 0.8 5°C 25°C 1.0 1.2 IT14976 VDD=20V VGS=10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 5 td(off) 3 2 tf 100 10 7 5 3 2 0.1 2 3 5 7 1.0 tr td(on) 7 5 3 2 10 Coss Crss 2 3 5 7 10 0 5 10 15 20 25 30 35 IT14978 Drain Current, ID -- A IT14977 Drain-to-Source Voltage, VDS -- V No. A1549-3/4 FW282 10 9 VGS -- Qg VDS=20V ID=6A Drain Current, ID -- A 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=24A ID=6A 10 PW≤10μs Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 1m 10 0μ s s DC op er ati on 10 ms 0m s 10 s (T a= 2 Operation in this area is limited by RDS(on). 5° C ) 0.01 0.01 Ta=25°C Single pulse When mounted on ceramic substrate(2000mm2×0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57 Total Gate Charge, Qg -- nC 2.6 PD -- Ta IT14979 Drain-to-Source Voltage, VDS -- V IT14980 Allowable Power Dissipation, PD -- W 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s To t 1u al di ss ip nit ati on 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT14981 Note on usage : Since the FW282 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2009. Specifications and information herein are subject to change without notice. PS No. A1549-4/4