FW313

Ordering number:ENN6389 N-Channel and P-Channel Silicon MOSFETs FW313 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package. · High-density mounting. Package Dimensions unit:mm 2129 [FW313] 8 5 0.3 4.4 6.0 0.2 5.0 1.5 0.595 1.27 0.43 0.1 1.8max 1 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings N-channel 30 ±20 7 P-channel –30 ±20 –5 –20 1.7 2.0 150 –55 to +150 Unit V V A A W W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) 28 Electrical Characteristics at Ta = 25˚C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=10V ID=4A, VGS=4V 1.0 9 13 25 37 32 50 30 10 ±10 2.4 V µA µA V S mΩ mΩ Symbol Conditions Ratings min typ max Unit Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2373 No.6389-1/6 FW313 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–5A ID=–5A, VGS=–10V ID=–2A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=–10V, VGS=–10V, ID=–5A VDS=–10V, VGS=–10V, ID=–5A VDS=–10V, VGS=–10V, ID=–5A IS=–5A, VGS=0 –1.0 5 8 42 85 820 470 230 15 150 85 90 25 5 7 –1.0 –1.5 53 120 –30 –10 ±10 –2.5 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A IS=7A, VGS=0 Conditions Ratings min typ 700 380 180 15 180 90 80 22 5 6 0.85 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Marking : W313 Electrical Connection D1 D1 D2 D2 S1 G1 S2 G2 (Top view) Switching Time Test Circuit [N-channel] VDD=15V VIN 10V 0V VIN PW=10µs D.C.≤1% ID=4A RL=3.75Ω Switching Time Test Circuit [P-channel] VDD=--15V VIN 0V --10V VIN PW=10µs D.C.≤1% ID=--3A RL=5Ω D G VOUT D G VOUT P.G 50Ω FW313 P.G 50Ω FW313 S S No.6389-2/6 FW313 8 ID -- VDS 8.0V 6.0V 4.0 V 3.5 V [Nch] 10 9 8 ID -- VGS VDS=10V [Nch] 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10.0V Drain Current, ID – A Drain Current, ID – A 3.0 V 7 Ta=75 °C 0 0.5 1.0 1.5 2.0 2.5 2.5V 5 4 3 2 VGS=2.0V 0.8 0.9 1.0 1 0 3.0 3.5 IT00901 Drain-to-Source Voltage, VDS – V 100 90 IT00900 Gate-to-Source Voltage, VGS – V 70 RDS(on) -- VGS [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ RDS(on) -- Ta --25° C 25°C 6 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 60 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 ID=4A 7A 50 40 4A I D= =4V , VGS 30 A, I D=7 =10V VGS 20 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 IT00903 Gate-to-Source Voltage, VGS – V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 yfs -- ID IT00902 Ambient Temperature, Ta – ˚C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 [Nch] VDS=10V IF -- VSD VGS = 0 [Nch] Forward Transfer Admittance, | yfs | – S C 25° °C 25 =-Ta Ta=7 5°C 75 °C Forward Current, IF – A Drain Current, ID – A 5 7 100 IT00904 0 0.1 0.2 0.3 0.4 0.5 0.6 --25°C 0.7 0.8 25°C 0.9 1.0 Diode Forward Voltage, VSD – V 10000 7 5 3 2 IT00905 1000 7 5 SW Time -- ID VDD=15V VGS=10V [Nch] Ciss, Coss, Crss -- VDS [Nch] f=1MHz Switching Time, SW Time – ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 2 3 5 7 Ciss, Coss, Crss – pF td(off) tf tr td(on) 1000 7 5 3 2 100 7 5 3 2 10 0 5 10 Ciss Coss Crss Drain Current, ID – A 1.0 10 15 20 25 30 IT00907 IT00906 Drain-to-Source Voltage, VDS – V No.6389-3/6 FW313 10 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 IT00908 VGS -- Qg VDS=10V ID=7A [Nch] 100 7 5 3 2 ASO IDP=28A ID=7A 1 10 ms ms [Nch] Gate-to-Source Voltage, VGS – V 10µs 100µs Drain Current, ID – A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 op era tio Operation in this n area is limited by RDS(on). Ta=25°C Single pulse 1 unit DC 10 0m s Total Gate Charge, Qg – nC --6 0.01 Mounted on a ceramic 23 5 7 1.0 0.1 board (1000mm2×0.8mm) 2 3 5 7 10 2 3 5 7 100 IT00909 Drain-to-Source Voltage, VDS – V ID -- VDS --8.0V [Pch] --10 ID -- VGS VDS=--10V [Pch] --9 --8 --5 --6.0 V 0V Drain Current, ID – A Drain Current, ID – A .0V --4 --4 --10 . --7 --6 --5 --4 --3 --2 --3 0 --3. V --2.5V --1 Ta= 7 0 --0.5 --1.0 --1.5 --2.0 --2.5 --2 5°C 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 VGS=--2.0V --0.8 --0.9 --1.0 0 --2 5 --1 --3.0 25°C --3.5 °C --4.0 Drain-to-Source Voltage, VDS – V 200 180 IT00910 Gate-to-Source Voltage, VGS – V 140 IT00911 RDS(on) -- VGS [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 120 160 140 120 100 80 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 ID=--2A --5A 100 80 -I D= =--4 VGS 2A, V 60 =--10V A, V GS I D=--5 40 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS – V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.01 2 3 yfs -- ID IT00912 Ambient Temperature, Ta – ˚C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 IT00913 [Pch] VDS=--10V VGS = 0 IF -- VSD [Pch] Forward Transfer Admittance, | yfs | – S Ta= 5°C --2 °C 75 Forward Current, IF – A C 25° Ta=75°C 25 °C 0 --0.2 --0.4 --0.6 5 7 --0.1 2 3 5 7--1.0 23 5 7 --10 23 Drain Current, ID – A 5 7--100 IT00914 --25°C --0.8 --1.0 --1.2 --1.4 Diode Forward Voltage, VSD – V IT00915 No.6389-4/6 FW313 1000 7 SW Time -- ID [Pch] VDD=--15V VGS=--10V 10000 7 5 3 2 Ciss, Coss, Crss -- VDS [Pch] f=1MHz Switching Time, SW Time – ns 5 3 2 tr tf td(off) Ciss, Coss, Crss – pF 1000 7 5 3 2 100 7 5 3 2 10 Ciss Coss Crss 100 7 5 3 2 td(on) 2 3 5 7 --1.0 2 3 5 7 --10 10 --0.1 0 --5 --10 --15 --20 --25 --30 IT00917 Drain Current, ID – A --10 IT00916 Drain-to-Source Voltage, VDS – V --100 7 5 3 2 VGS -- Qg VDS=--10V ID=--5A [Pch] ASO IDP=--20A ID=--5A 1 10 ms ms [Pch] Gate-to-Source Voltage, VGS – V --9 --8 --7 --6 --5 --4 --3 --2 --1 0 0 100µs Drain Current, ID – A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 DC op 0m s era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse 1 unit 5 10 15 20 25 IT00918 Total Gate Charge, Qg – nC Allowable Power Dissipation (FET1), PD – W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 --0.01 Mounted on a ceramic 23 5 7 --1.0 --0.1 board (1000mm2×0.8mm) 2 3 5 7 --10 2 3 5 7 --100 IT00919 Drain-to-Source Voltage, VDS – V PD(FET 1) -- PD(FET 2) M ou nte do [Nch, Pch] 2.5 PD -- Ta [Nch, Pch] Allowable Power Dissipation, PD – W na 2.0 1.7 1.5 ce ram ic bo ard To (1 00 tal 0m Di ss m2 ×0 1.0 .8m 1u ip nit ati on m) 1u nit 0.5 0 1.8 2.0 Mounted on a ceramic board (1200mm2×0.8mm) 0 20 40 60 80 100 120 140 160 Allowable Power Dissipation (FET2), PD – W IT00921 Ambient Temperature, Ta – ˚C IT00920 No.6389-5/6 FW313 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6389-6/6