FW344

Ordering number : ENN7616 FW344 N-Channel and P-Channel Silicon MOSFETs FW344 Motor Driver Applications Features • • • Package Dimensions unit : mm 2129 [FW344] 8 5 0.3 4.4 6.0 0.2 5.0 0.595 1.27 0.43 • Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10µs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg duty cycle≤1% duty cycle≤1% duty cycle≤1% 0.1 Specifications 1.5 1.8max 1 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings N-channel 30 ± 20 3.5 4 6 14 P-channel --30 ± 20 --4 --4.5 --6.5 --16 1.4 1.7 150 --55 to +150 Unit V V A A A A W W °C °C Mounted on a ceramic board (2000mm2!0.8mm)1unit Mounted on a ceramic board (2000mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA 30 1 ± 10 1.2 2.6 V µA µA V Symbol Conditions Ratings min typ max Unit Marking : W344 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71003 TS IM TA-100756 No.7616-1/6 FW344 Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=± 16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-4A ID=--4A, VGS=--10V ID=--2A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A IS=--4A, VGS=0 --30 --1 ± 10 --1.2 3.5 5 58 105 510 115 78 11 55 35 40 11 2.4 1.7 --0.9 --1.5 78 147 --2.3 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=3.5A ID=3.5A, VGS=10V ID=1.8A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A IS=3.5A, VGS=0 Ratings min 3.0 typ 5.3 64 105 180 42 25 7 15 19 5 5.0 0.9 0.6 0.88 1.2 84 150 max Unit S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Electrical Connection 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 (Top view) Switching Time Test Circuit VIN [N-channel] 10V 0V VIN PW=10µs D.C.≤1% VDD=15V [P-channel] VIN 0V --10V VIN PW=10µs D.C.≤1% VDD= --15V ID=3.5A RL=4.3Ω ID= --4A RL=3.75Ω D VOUT D VOUT G G FW344 P.G 50Ω FW344 P.G 50Ω S S No.7616-2/6 FW344 7 ID -- VDS 5V 4V [Nch] 3.5 ID -- VGS [Nch] VDS=10V 8V 6V 6 3.0 Drain Current, ID -- A 5 Drain Current, ID -- A 2.5 V 4 VGS=3V 10 2.0 3 1.5 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2 5 °C 2.5 3.0 2 1.0 Ta= 75°C --25 °C 3.5 4.0 Drain-to-Source Voltage, VDS -- V 300 IT06457 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 200 IT06458 [Nch] Ta=25°C RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 150 200 150 3.5A ID=1.8A 100 I D= , VG 1.8A 4V S= .5A I D=3 50 =10V , VGS 100 50 0 2 3 4 5 6 7 8 9 10 IT06459 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 yfs -- ID Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT06460 [Nch] VDS=10V IF -- VSD Forward Transfer Admittance, yfs -- S 7 5 3 2 [Nch] VGS=0 1.0 7 5 3 2 °C 25 = Ta --2 C 5° °C 75 Forward Current, IF -- A 5°C 25°C 0.6 0.1 0.01 2 3 57 0.1 2 3 57 1.0 2 3 Drain Current, ID -- A 100 7 10 IT06461 57 0.01 0.2 0.3 0.4 0.5 0.7 --25° C 0.8 Ta= 7 0.9 1.0 1.1 1.2 SW Time -- ID [Nch] Switching Time, SW Time -- ns 5 3 2 VDD=15V VGS=10V 1000 7 5 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT06462 [Nch] f=1MHz td(off) Ciss, Coss, Crss -- pF 3 2 Ciss 10 7 5 3 2 td(on) 100 7 5 3 2 tf tr Coss Crss 1.0 0.1 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 IT06463 7 0 5 10 15 20 25 30 IT06464 Drain-to-Source Voltage, VDS -- V No.7616-3/6 FW344 10 9 VGS -- Qg VDS=10V ID=3.5A [Nch] 3 2 10 7 5 ASO IDP=14A ID=3.5A 10 [Nch]