FW344A

Ordering number : EN8998A FW344A SANYO Semiconductors DATA SHEET FW344A Features • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • • • ON-resistance Nch : RDS(on)1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP IDP PD PT Tch Tstg Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (2000mm2×0.8mm) Conditions N-channel 30 ±20 4.5 5 18 1.4 1.7 150 --55 to +150 P-channel --30 ±20 --3.5 --4 --14 Unit V V A A A W W °C °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7072-001 4.9 8 5 0.22 Product & Package Information • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2,500 pcs./reel Packing Type : TL Marking 1 1.27 4 0.445 0.254 (GAGE PLANE) 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOIC8 TL FW344 A LOT No. 7 6 5 6.0 3.9 0.375 0.715 Electrical Connection 8 1.375 0.175 1.55 1 2 3 4 http://semicon.sanyo.com/en/network 31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/6 FW344A Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=--3.5A, VGS=0V VDS=--10V, VGS=--10V, ID=--3.5A VDS=--10V, f=1MHz ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--3.5A ID=--3.5A, VGS=--10V ID=--2A, VGS=--4.5V ID=--2A, VGS=--4V --1.2 3.9 78 125 145 250 65 46 5.4 See specified Test Circuit. 34 28 24 5 1 1.2 --0.88 --1.5 102 175 205 --30 --1 ±10 --2.3 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=4.5A, VGS=0V VDS=10V, VGS=10V, ID=4.5A VDS=10V, f=1MHz ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4.5A ID=4.5A, VGS=10V ID=2A, VGS=4.5V ID=2A, VGS=4V 30 1 ±10 1.2 2.6 49 80 100 280 60 30 6 See specified Test Circuit. 21 20 10 5.6 1.2 0.8 0.85 1.2 64 112 140 2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit No.8998-2/6 FW344A Switching Time Test Circuit [N-channel] 10V 0V VIN VDD=15V [P-channel] 0V --10V VIN VDD= --15V VIN PW=10μs D.C.≤1% G D ID=4.5A RL=3.3Ω VOUT PW=10μs D.C.≤1% VIN D ID= --3.5A RL=4.3Ω VOUT G P.G FW344A 50Ω S P.G FW344A 50Ω S 4.5 ID -- VDS 10.0V 8.0V [Nch] 9 8 7 ID -- VGS VDS=10V [Nch] 4.5V 6.0V 4.0 3.5 4.0 V Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Drain Current, ID -- A 6 5 4 2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 25 2.5 1 Ta= 75° --2 C 5°C 3.0 4.0 VGS=3.0V 3 °C 3.5 4.5 5.0 Drain-to-Source Voltage, VDS -- V 300 RDS(on) -- VGS IT16697 Gate-to-Source Voltage, VGS -- V 200 [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta IT16698 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 ID=2.0A 4.5A 150 200 150 100 100 50 A =2.0 V, I D =4.0 A VGS =2.0 V, I D =4.5 VGS 4.5A V, I D= =10.0 V GS 50 0 0 2 4 6 8 10 IT16699 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT16700 No.8998-3/6 FW344A 10 | yfs | -- ID [Nch] VDS=10V Forward Transfer Admittance, | yfs | -- S 7 5 10 7 5 3 2 1.0 7 5 IS -- VSD [Nch] VGS=0V 2 C 25° = Ta --2 5°C Source Current, IS -- A 3 1.0 7 5 3 2 0.1 0.01 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 100 7 SW Time -- ID 5 7 10 IT16701 0.01 0 0.2 0.4 Ta= 7 °C 75 3 2 5°C 25°C --25° C 0.6 0.8 1.0 1.2 IT16702 Switching Time, SW Time -- ns 5 3 2 [Nch] VDD=15V VGS=10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Nch] f=1MHz td(off) Ciss 10 7 5 3 2 1.0 0.1 td(on) tf 100 7 5 3 2 10 Coss Crss tr 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 9 VGS -- Qg 10 IT16703 7 0 10 20 30 IT16704 Drain-to-Source Voltage, VDS -- V 100 7 5 3 2 [Nch] ASO [Nch] Gate-to-Source Voltage, VGS -- V VDS=10V ID=4.5A Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT16705 IDP=18A (PW≤10μs) ID=4.5A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 DC 0.01 0.01 ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 op 0μ 1m s 10 s 10 ms 0m s 10 s er 10 Total Gate Charge, Qg -- nC --3.5 ID -- VDS Drain-to-Source Voltage, VDS -- V --7 [Pch] ID -- VGS 5 7 100 IT16749 [Pch] 0V --8.0V --3.0 --6. 0V --4 .5V --4 .0V VDS= --10V --6 Drain Current, ID -- A --2.0 --1.5 --1.0 --0.5 0 --10 . --2.5 Drain Current, ID -- A --5 --4 --3 --2 --1 0 --3.0V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 25 --2.0 VGS= --2.5V --2 Ta= 5° 75° C C --2.5 --3.0 °C --3.0 --4.0 Drain-to-Source Voltage, VDS -- V IT16750 Gate-to-Source Voltage, VGS -- V IT16751 No.8998-4/6 FW344A 300 RDS(on) -- VGS ID= --2A --3.5A [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 250 200 200 150 150 = -VGS = --2 , ID 4.0V .0A .0A A 100 100 = VGS = --2 V, I D --4.5 50 50 --10.0 V GS= --3.5 V, I D= 0 0 --2 --4 --6 --8 --10 IT16752 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID Ambient Temperature, Ta -- °C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 [Pch] VDS= --10V IS -- VSD IT16753 [Pch] VGS=0V Forward Transfer Admittance, | yfs | -- S 7 5 2 1.0 7 5 3 2 0.1 --0.01 25 °C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 100 7 SW Time -- ID 5 7 --10 IT16754 --0.01 0 --0.2 --0.4 Ta=7 5°C 25°C --0.6 --25°C --0.8 °C -25 =°C Ta 75 Source Current, IS -- A 3 --1.0 --1.2 IT16755 Switching Time, SW Time -- ns 5 3 2 [Pch] VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Pch] f=1MHz td(off) tf Ciss 10 7 5 3 2 1.0 --0.1 100 7 5 3 2 10 td(on) tr Coss Crss 2 3 5 7 --1.0 2 3 5 7 --10 0 --5 --10 --15 --20 --25 --30 IT13192 Drain Current, ID -- A --10 --9 VGS -- Qg IT16756 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 [Pch] ASO [Pch] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --3.5A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 IT16757 IDP= --14A(PW≤10μs) ID= --3.5A DC Drain Current, ID -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 op era 100 μs 1 10 ms ms 10 0m s s Operation in this area tion is limited by RDS(on). Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) 5 7--0.1 23 5 7--1.0 23 5 7--10 23 --0.01 --0.01 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 57 --100 IT16758 No.8998-5/6 FW344A 2.0 PD -- Ta [Nch/Pch] Allowable Power Dissipation (FET1), PD -- W Allowable Power Dissipation, PD -- W 1.7 1.5 1.4 When mounted on ceramic substrate (2000mm2×0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 PD (FET1) -- PD (FET2) When mounted on ceramic substrate (2000mm2×0.8mm) To t 1.0 al Di ss 1u 0.5 ip nit ati on 0 0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ambient Temperature, Ta -- °C IT16759 Allowable Power Dissipation (FET1), PD -- W IT16760 Note on usage : Since the FW344A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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