FW377

Ordering number : ENA0977 FW377 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW377 Features • • General-Purpose Switching Device Applications • For motor drivers, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10µs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg duty cycle≤1% duty cycle≤1% duty cycle≤1% Mounted on a ceramic board (1500mm2✕0.8mm)1unit, PW≤10s Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s Conditions N-channel 35 ±20 6 7 10 24 1.8 2.2 150 --55 to +150 P-channel --35 ±20 --5 --6 --10 --20 Unit V V A A A A W W °C °C Marking : W377 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2107PA TI IM TC-00001038 No. A0977-1/6 FW377 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0V VDS=-35V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-5A ID=-5A, VGS=-10V ID=-3A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-20V, VGS=--10V, ID=-5A VDS=-20V, VGS=--10V, ID=-5A VDS=-20V, VGS=--10V, ID=-5A IS=--5A, VGS=0V --35 --1 ±10 --1.2 4.5 7.5 37 62 1200 190 140 13 47 101 69 24 3.7 5.4 -0.85 --1.5 49 87 --2.6 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=3A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=10V, ID=6A IS=6A, VGS=0V 35 1 ±10 1.2 4.6 7.8 25 43 1050 150 100 13 43 76 48 20 3.3 4.5 0.84 1.2 33 61 2.6 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7005-003 Electrical Connection 8 7 6 5 8 5 0.3 1 4 0.43 0.2 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 4.4 6.0 0.595 1.27 0.1 1.5 1.8 MAX Top view No. A0977-2/6 FW377 Switching Time Test Circuit [N-channel] 10V 0V VIN ID=6A RL=3.3Ω VIN VDD=20V [P-channel] 0V --10V VIN VDD= --20V VIN ID= --5A RL=4Ω D PW=10µs D.C.≤1% VOUT PW=10µs D.C.≤1% D VOUT G G FW377 P.G 50Ω FW377 P.G 50Ω S S 6.0 ID -- VDS 16V [Nch] 12 11 10 ID -- VGS VDS=10V [Nch] 5.5 5.0 6V 3.5 V 4V 10 V Drain Current, ID -- A Drain Current, ID -- A 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 9 8 7 6 5 4 3V Ta= 75°C 0 0.5 1.0 1.5 2.0 2.5 3 2 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 --25 3.0 3.5 VGS=2.5V 1 °C 25°C 4.0 Drain-to-Source Voltage, VDS -- V 90 IT13051 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 80 IT13052 [Nch] Ta=25°C RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 70 60 50 40 30 20 10 0 --60 ID=3A 6A =3A , ID =4V VGS 6A , I D= =10V VGS --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 IT13053 Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 2 IT13054 ⏐yfs⏐ -- ID [Nch] IS -- VSD Forward Transfer Admittance, ⏐yfs⏐ -- S 7 5 3 2 VDS=10V [Nch] VGS=0V 1.0 7 5 3 2 2 C 5° = Ta C 5° --2 °C 75 Source Current, IS -- A °C 3 2 2 3 57 2 3 57 2 3 57 0.01 0.2 0.4 0.6 0.8 1.0 1.2 IT13056 0.1 0.01 0.1 1.0 Drain Current, ID -- A 10 IT13055 Diode Forward Voltage, VSD -- V Ta=7 5 0.1 7 5 --25°C 25°C No. A0977-3/6 FW377 5 3 SW Time -- ID [Nch] VDD=20V VGS=10V Ciss, Coss, Crss -- pF 3 2 Ciss, Coss, Crss -- VDS [Nch] f=1MHz Switching Time, SW Time -- ns 2 1000 7 5 3 2 Ciss 100 7 5 3 2 td(off) tr td(on) 10 7 5 0.1 tf Coss Crss 100 7 5 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 9 10 IT13057 7 0 5 10 15 20 25 30 35 IT13058 Drain-to-Source Voltage, VDS -- V 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 VGS -- Qg VDS=20V ID=6A [Nch] ASO IDP=24A ID=6A [Nch] PW≤10µs 10 0 1m µs s 10 m s 10 0m s Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 IT13059 Drain Current, ID -- A DC Operation in this area is limited by RDS(on). 10 op s era tio n 0.01 0.01 Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57 Total Gate Charge, Qg -- nC --16V --5.0 --4.5 --4.0 ID -- VDS --4V --10V --6V Drain-to-Source Voltage, VDS -- V --10 IT13060 [Pch] ID -- VGS [Pch] --3 --3V .5 V VDS= --10V --9 --8 Drain Current, ID -- A Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.1 --7 --6 --5 --4 --3 --2 --1 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 Ta=7 5°C -25°C 25 ° C --2.5 --3.0 --3.5 V GS= --2.5 V --4.0 Drain-to-Source Voltage, VDS -- V 140 IT13061 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 120 IT13062 [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 100 80 80 ID= --3A --5A 60 = VGS = -, ID --4V 3A 60 40 40 = --10 VGS = --5A V, I D 20 0 0 --2 --4 --6 --8 --10 --12 --14 --16 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT13063 Ambient Temperature, Ta -- °C IT13064 No. A0977-4/6 FW377 10 ⏐yfs⏐ -- ID VDS= --10V [Pch] Forward Transfer Admittance, ⏐yfs⏐ -- S 7 5 3 2 --10 7 5 3 2 --1.0 7 5 IS -- VSD [Pch] VGS=0V 7 5 3 2 --0.1 7 5 3 2 0.1 --0.01 2 3 57 --0.1 2 3 57 --1.0 2 3 Drain Current, ID -- A 5 3 --10 IT13065 57 --0.01 --0.2 --0.4 Ta=7 5 1.0 3 2 --0.6 25°C --25°C --0.8 °C 2 C 5° °C -25 =Ta °C 75 Source Current, IS -- A --1.0 --1.2 IT13066 Diode Forward Voltage, VSD -- V 3 SW Time -- ID [Pch] VDD= --20V VGS= --10V 2 Ciss, Coss, Crss -- VDS Ciss [Pch] f=1MHz Switching Time, SW Time -- ns 2 td(off) 100 7 5 3 2 Ciss, Coss, Crss -- pF 1000 7 5 3 tf tr Coss 2 td(on) 10 7 5 --0.1 2 3 5 7 --1.0 2 3 5 --10 IT13067 7 100 7 5 0 --5 --10 --15 Crss --20 --25 --30 --35 IT13068 Drain Current, ID -- A --10 --9 Drain-to-Source Voltage, VDS -- V VGS -- Qg [Pch] 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --20A ID= --5A 10 m [Pch] Gate-to-Source Voltage, VGS -- V VDS= --20V ID= --5A PW≤10µs --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 IT13069 10 s Drain Current, ID -- A 10 DC 10s op er ati o 0m 0µ s 1m s s Operation in this area is limited by RDS(on). n --0.01 --0.01 2 3 Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm) 1unit 5 7--0.1 23 5 7--1.0 23 5 7 --10 23 57 IT13070 Drain-to-Source Voltage, VDS -- V PD(FET1) -- PD(FET2) [Nch, Pch] Total Gate Charge, Qg -- nC 2.6 Allowable Power Dissipation, PD -- W 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Mounted on a ceramic board (1500mm2✕0.8mm) PW≤10s Allowable Power Dissipation, PD (FET1) -- W PD -- Ta [Nch, Pch] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Mounted on a ceramic board (1500mm2✕0.8mm) PW≤10s To t 1u al di ss ip nit ati on 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ambient Temperature, Ta -- °C IT13071 Allowable Power Dissipation, PD (FET2) -- W IT13072 No. A0977-5/6 FW377 Note on usage : Since the FW377 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2007. Specifications and information herein are subject to change without notice. PS No. A0977-6/6