FW507

Ordering number : ENN8403 FW507 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW507 Features • General-Purpose Switching Device Applications • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and a short reverse recovery time, low forward voltage schottky barrier diode facilitating high-density mounting. The FW507 incorporates two chips being equivalent to the MCH3312 and the SB1003M in one package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 1 5 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (3000mm2!0.8mm) ≤10s 1unit --30 ±20 --3 --12 2 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : W507 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81205PA MS IM TB-00001717 No.8403-1/6 FW507 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=200µA IF=1A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 30 0.47 27 10 0.55 15 V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-3A ID=--3A, VGS=--10V ID=--1.5A, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--3A VDS=--10V, VGS=-10V, ID=--3A VDS=--10V, VGS=-10V, ID=--3A IS=--3A, VGS=0V --1.2 1.9 3.3 115 210 200 47 32 7.2 6.8 18 8.0 5.5 0.98 0.82 --0.91 --1.2 150 295 --30 --1 ±10 --2.6 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 7005-012 8 5 0.3 Electrical Connection 8 7 6 5 1 : Anode 2 : Anode 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view 4.4 6.0 1 4 0.43 0.2 5.0 1 : Anode 2 : Anode 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : SOP8 1 2 3 4 0.595 1.27 0.1 1.5 1.8 MAX No.8403-2/6 FW507 Switching Time Test Circuit [MOSFET] VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --3A RL=5Ω VDD= --15V trr Test Circuit [SBD] Duty≤10% 100mA 100mA 10mA 50Ω 10µs 100Ω 10Ω D VOUT --5V G trr FW507 P.G 50Ω S V --2.0 ID -- VDS V --10. 0 [MOSFET] --5.0 ID -- VGS VDS= --10V [MOSFET] --6.0 0V --4. --4.5 --4.0 --1.6 Drain Current, ID -- A . --3 --1.2 5V Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --0.8 VGS= --3.0V --0.4 --1.0 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 25 --3.0 --3.5 5°C °C --25° C --1.5 Ta= 7 --4.0 --4.5 400 Drain-to-Source Voltage, VDS -- V IT03223 [MOSFET] RDS(on) -- VGS Ta=25°C 400 Gate-to-Source Voltage, VGS -- V IT03224 [MOSFET] RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 250 200 150 100 50 0 --60 --1.0A 200 -I D= , VG 0.5A --4 S= V ID= --0.5A 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 V S= 1.0A, G I D= -- --10V --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT03225 Ambient Temperature, Ta -- °C IT03226 No.8403-3/6 FW507 10 yfs -- ID [MOSFET] VDS= --10V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IS -- VSD [MOSFET] VGS=0V Forward Transfer Admittance, yfs -- S 7 5 3 2 25 °C °C 1.0 7 5 3 2 = Ta 5 --2 °C 75 Source Current, IS -- A °C --0.3 --0.4 --0.5 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 2 100 5 7 --10 IT03227 --0.01 --0.2 Ta=7 5 --0.6 25°C --25°C --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 SW Time -- ID [MOSFET] 3 2 IT03228 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF f=1MHz Ciss Switching Time, SW Time -- ns 7 5 3 2 10 7 5 3 2 1.0 --0.1 10 2 3 5 7 --1.0 2 3 5 IT03229 0 --5 --10 --15 --20 --25 --30 100 7 5 td(off) td(on) tf Coss 3 2 Crss tr Drain Current, ID -- A --10 --9 VGS -- Qg [MOSFET] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --2A Drain Current, ID -- A 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V IT03230 ASO [MOSFET] IDP= --12A ID= --3A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 IT03231 10