FW513

Ordering number : ENA1870 FW513 SANYO Semiconductors DATA SHEET FW513 Features • • • MOSFET : N-Channel Silicon MOSFET FRD : Ultrahigh-Speed Switching Diode General-Purpose Switching Device Applications FET RDS(on)=5.8Ω (typ.), 10V drive FRD VF=1.1V (typ.), trr=40ns (typ.) Nch MOSFET+FRD Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm2×0.8mm) 1unit 600 ±30 0.35 1.4 1.5 150 --55 to +150 V V A A W °C °C Symbol Conditions Ratings Unit Continued on next page. Package Dimensions unit : mm (typ) 7005A-009 5.0 0.8 8 5 0.2 0.3 Product & Package Information • Package : SOP8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 1,000 pcs./reel Packing Type : TL Marking 0.1 W513 1 1.27 4 0.43 6.0 4.4 1.8 MAX 1.5 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : SOP8 TL LOT No. 0.8 Electrical Connection 8 7 6 5 0.7 1 2 3 4 http://semicon.sanyo.com/en/network N1710PB TKIM TC-00002515 No. A1870-1/5 FW513 Continued from preceding page. Parameter [FRD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg Sine wave, 10ms 600 600 1 4 150 --55 to +150 V V A A °C °C Symbol Conditions Ratings Unit Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [FRD] Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=1A VR=600V IF=1A, di / dt=100A/μs IF=0.5A, IR=1A Junction -Case 600 1.1 40 16 6 1.3 10 50 V V μA ns ns °C / W V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±24V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=0.2A ID=0.2A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=300V, VGS=10V, ID=0.35A VDS=300V, VGS=10V, ID=0.35A VDS=300V, VGS=10V, ID=0.35A IS=0.35A, VGS=0V 3 0.48 5.8 130 25 4.0 9.1 15 18 19 6.2 0.9 3.8 0.76 1.2 7.6 600 1 ±10 5 V mA μA V S Ω pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Switching Time Test Circuit [MOSFET] 10V 0V VIN VDD=200V ID=0.2A RL=1000Ω D VOUT VIN PW=10μs D.C.≤1% G FW513 P.G 50Ω S No. A1870-2/5 FW513 2.0 1.8 1.6 ID -- VDS 10 V [MOSFET] 8V 2.0 1.8 ID -- VGS Ta= --2 5°C VDS=10V [MOSFET] V 15 25°C 7V 1.6 Drain Current, ID -- A Drain Current, ID -- A 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 75°C 6V VGS=5V 0 2 4 6 8 10 12 14 16 18 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IT16051 10 Drain-to-Source Voltage, VDS -- V IT15875 RDS(on) -- VGS [MOSFET] Gate-to-Source Voltage, VGS -- V 20 18 RDS(on) -- Ta [MOSFET] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 ID=0.2A 8 16 14 12 10 8 6 4 2 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 7 6 = V GS =0. , ID 0V 1 2A 5 4 0 4 8 12 16 20 24 3 IT16052 Gate-to-Source Voltage, VGS -- V | yfs | -- ID [MOSFET] Ambient Temperature, Ta -- °C 3 2 1.0 7 5 IT16053 IS -- VSD [MOSFET] Forward Transfer Admittance, | yfs | -- S 2 1.0 VDS=10V VGS=0V Source Current, IS -- A 7 5 3 2 0.1 7 5 3 2 0.01 0.001 °C 25 3 2 0.1 7 5 Ta= 75° C 3 2 0.01 7 5 3 2 2 3 5 7 0.01 2 3 5 7 0.1 2 3 Drain Current, ID -- A 100 7 5 7 1.0 2 IT16077 0.001 0.2 0.4 0.6 --25° C 0.8 25°C C 5° --2 = Ta °C 75 1.0 1.2 IT16054 SW Time -- ID [MOSFET] VDD=200V VGS=10V Ciss, Coss, Crss -- pF 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [MOSFET] f=1MHz Switching Time, SW Time -- ns 5 Ciss 100 7 5 3 2 10 7 5 3 2 tf 3 2 td (off) Coss tr 10 7 5 0.1 2 3 5 7 2 3 td(on) Crss 1.0 1.0 0 5 10 15 20 25 30 35 40 45 50 Drain Current, ID -- A IT15893 Drain-to-Source Voltage, VDS -- V IT15894 No. A1870-3/5 FW513 16 14 12 10 8 6 4 2 0 VGS -- Qg VDS=300V ID=0.35A [MOSFET] Gate-to-Source Voltage, VGS -- V 10 7 5 3 2 ASO [MOSFET] IDP=1.4A (PW≤10μs) ID=0.35A 10 Drain Current, ID -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 10 DC op era μs 1 m ms s 100 0m s Operation in this area is limited by RDS(on). tio n 0 1 2 3 4 5 6 7 8 9 0.001 0.1 Ta=25°C Single pulse When mounted on ceramic substrate (1000mm2×0.8mm) 1unit 23 5 7 1.0 23 5 7 10 23 5 7 100 23 Total Gate Charge, Qg -- nC 1.8 PD -- Ta IT16055 Drain-to-Source Voltage, VDS -- V 5 71000 IT16075 [MOSFET] When mounted on ceramic substrate (1000mm2×0.8mm) 1unit Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 10 IF -- VF IT16076 [FRD] 100 IR -- VR Ta=150°C [FRD] Forward Current, IF -- A 1.0 Reverse Current, IR -- μA 10 125°C °C 75 100°C 1.0 0°C -25 °C 0° C 10 0.1 75°C 0.1 °C 50° C 125 50°C 0.01 0.01 25° C Ta= 1 50°C 25°C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT15497 0.001 0 100 200 300 400 500 600 IT15498 Forward Voltage, VF -- V 5 3 Cj -- VR Reverse Voltage, VR -- V 14 [FRD] Surge Forward Current, IFSM(Peak) -- A f=100kHz IFSM -- t [FRD] 12 10 8 Junction Capacitance, Cj -- pF 2 10 7 5 3 2 6 4 2 0 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Reverse Voltage, VR -- V 5 7 100 IT15499 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s IT15500 No. A1870-4/5 FW513 Note on usage : Since the FW513 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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