FW812

Ordering number : ENA1806 FW812 SANYO Semiconductors DATA SHEET FW812 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance 4V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW=10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD PT Tch Tstg Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Conditions Ratings 35 ±20 10 11.5 52 2.3 2.5 150 --55 to +150 Unit V V A A A W W °C °C Package Dimensions unit : mm (typ) 7005A-003 5.0 0.8 8 5 0.2 0.3 Product & Package Information • Package : SOP8 • JEITA, JEDEC : SC-87, SOT96 • Minimum Packing Quantity : 1,000 pcs./reel Packing Type : TL Marking 0.1 0.8 1 1.27 4 0.43 1.8 MAX 1.5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 W812 TL 6.0 4.4 LOT No. Electrical Connection 8 7 6 5 0.7 1 2 3 4 http://semicon.sanyo.com/en/network 81110PA TK IM TC-00002270 No. A1806-1/4 FW812 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V ID=5A, VGS=4.5V ID=5A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=20V, VGS=10V, ID=10A VDS=20V, VGS=10V, ID=10A VDS=20V, VGS=10V, ID=10A IS=10A, VGS=0V Ratings min 35 1 ±10 1.2 5.2 13 21 27 960 130 80 13.5 46.6 57.0 38.9 19 3.9 3.8 0.85 1.2 17 30 38 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 10V 0V VIN VDD=20V ID=10A RL=2.0Ω D VOUT VIN PW=10μs D.C.≤1% G FW812 P.G 50Ω S 14.0V 10.0V 10 9 8 ID -- VDS 6.0V 4.5V 16 14 12 10 8 6 4 2 0 ID -- VGS VDS=10V 4.0 V Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 3.5V Drain Current, ID -- A Ta=7 5° 1 2 C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 25 °C VGS=3.0V --25° C 3 0 4 IT15794 Drain-to-Source Voltage, VDS -- V IT15793 Gate-to-Source Voltage, VGS -- V No. A1806-2/4 FW812 80 RDS(on) -- VGS Ta=25°C ID=5A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 10A 50 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 40 30 20 I =5A 4.0V, D V GS= =5A V, I D =4.5 VGS =10A V, I D =10.0 VGS 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID C 25° IT15891 3 2 10 7 5 Ambient Temperature, Ta -- °C IS -- VSD IT15796 Forward Transfer Admittance, | yfs | -- S 7 5 3 2 VDS=10V VGS=0V Source Current, IS -- A 7 5 3 2 0.1 0.01 3 2 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 2 SW Time -- ID 5 7 10 2 IT15797 0.01 0.2 0.4 Ta= 75 1.0 0.6 --25° C 0.8 25° C °C Ta -2 =- C 5° °C 75 3 2 1.0 7 5 1.0 1.2 IT15798 3 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 100 7 5 3 2 VDD=20V VGS=10V Ciss, Coss, Crss -- pF td(off) f=1MHz 2 1000 7 5 3 2 Ciss tf td(on) 10 7 5 3 0.1 tr Coss 100 7 Crss 0 5 10 15 20 25 30 35 IT15800 2 3 5 7 1.0 2 3 5 7 10 2 IT15892 5 Drain Current, ID -- A 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V 100 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS=20V ID=10A Drain Current, ID -- A IDP=52A (PW≤10μs) 10 ID=10A 10 DC 10 s 10 1m s 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 0μ s 10 μs 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0m ms s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57 0.01 0.01 Total Gate Charge, Qg -- nC IT15801 Drain-to-Source Voltage, VDS -- V IT15802 No. A1806-3/4 FW812 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Allowable Power Dissipation(FET1), PD -- W 3.0 PD -- Ta Allowable Power Dissipation, PD -- W 2.4 2.3 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 PD (FET1) -- PD (FET2) When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.5 2.3 2.0 To t 1.5 al di 1u ss ip nit ati on 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Ambient Temperature, Ta -- °C IT15803 Allowable Power Dissipation(FET2), PD -- W IT15804 Note on usage : Since the FW812 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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