FW906

Ordering number : ENA1809 FW906 SANYO Semiconductors DATA SHEET FW906 Features • • • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg Duty cycle≤1% Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Conditions N-channel 30 ±20 8 9 20 52 2.3 2.5 150 --55 to +150 P-channel --30 ±20 --6 --7 --15 --52 Unit V V A A A A W W °C °C Package Dimensions unit : mm (typ) 7005A-003 5.0 0.8 8 5 0.2 0.3 Product & Package Information • Package : SOP8 • JEITA, JEDEC : SC-87, SOT96 • Minimum Packing Quantity : 1,000 pcs./reel Packing Type : TL Marking 0.1 0.8 1 1.27 4 0.43 1.8 MAX 1.5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 W906 TL 6.0 4.4 LOT No. Electrical Connection 8 7 6 5 0.7 1 2 3 4 http://semicon.sanyo.com/en/network 72110PA TK IM TC-00002248 No. A1809-1/6 FW906 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--6A ID=--6A, VGS=--10V ID=--3A, VGS=--4.5V ID=--3A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--6A VDS=--15V, VGS=--10V, ID=--6A VDS=--15V, VGS=--10V, ID=--6A IS=--6A, VGS=0V --1.2 8.5 31 49 57 600 160 120 6.6 37 63 48 12 1.9 2.7 --0.83 --1.2 41 69 80 --30 --1 ±10 --2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=10V ID=4A, VGS=4.5V ID=4A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=15V, VGS=10V, ID=8A VDS=15V, VGS=10V, ID=8A VDS=15V, VGS=10V, ID=8A IS=8A, VGS=0V 30 1 ±10 1.2 4.5 18 29 39 690 120 75 9.2 44 41 26 12 2.5 1.9 0.81 1.2 24 41 55 2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit No. A1809-2/6 FW906 Switching Time Test Circuit [N-channel] 10V 0V VIN VDD=15V [P-channel] 0V --10V VIN VDD= --15V VIN PW=10μs D.C.≤1% G D ID=8A RL=1.87Ω VOUT PW=10μs D.C.≤1% VIN D ID= --6A RL=2.5Ω VOUT G P.G FW906 50Ω S P.G FW906 50Ω S 8 ID -- VDS 1 14.0V 0.0V [Nch] 14 13 12 11 ID -- VGS VDS=10V [Nch] 6.0V 4.5V 7 6 5 4 3 2 1 0 4.0 V Drain Current, ID -- A Drain Current, ID -- A 3.5V 10 9 8 7 6 4 3 2 1 0 5 VGS=2.5V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 25°C 3.5 4.0 3.0V Ta=7 5°C --25°C 4.5 Drain-to-Source Voltage, VDS -- V 80 RDS(on) -- VGS IT15821 Gate-to-Source Voltage, VGS -- V 70 [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta IT15822 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 60 50 40 30 20 10 0 60 50 40 30 20 10 0 --60 ID=4A 8A =4.0 VGS =4A V, I D =4A , ID 4.5V = VGS =8A 0V, I D =10. VGS 0 2 4 6 8 10 12 14 16 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT15823 Ambient Temperature, Ta -- °C IT15824 No. A1809-3/6 FW906 7 | yfs | -- ID VDS=10V [Nch] Forward Transfer Admittance, | yfs | -- S 5 3 2 3 2 10 7 5 3 2 IS -- VSD [Nch] VGS=0V 7 5 3 2 25 °C 3 2 0.1 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 0.2 0.4 Ta= 75° C 25° C --25 °C 0.6 0.8 1.0 = Ta --2 C 5° °C 75 Source Current, IS -- A 1.0 7 5 1.0 1.2 IT15826 Drain Current, ID -- A 100 7 SW Time -- ID td(off) IT15825 [Nch] 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Nch] f=1MHz Switching Time, SW Time -- ns 5 3 2 1000 Ciss, Coss, Crss -- pF 7 5 3 2 Ciss tf td(on) 10 7 5 3 2 1.0 0.1 tr 100 7 Coss Crss VDD=15V VGS=10V 2 3 5 7 1.0 2 3 5 7 10 2 3 5 3 0 5 10 15 20 25 30 IT15828 Drain Current, ID -- A 10 9 VGS -- Qg IT15827 Drain-to-Source Voltage, VDS -- V 100 7 5 3 2 [Nch] ASO [Nch] Gate-to-Source Voltage, VGS -- V VDS=15V ID=8A Drain Current, ID -- A IDP=52A (PW≤10μs) 10 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=8A 10 10 10 1m ms 10 μs 0μ s s 0m s DC Operation in this area is limited by RDS(on). s op era tio n 0.01 0.01 Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Total Gate Charge, Qg -- nC --6 ID -- VDS --3 .5 V IT15829 Drain-to-Source Voltage, VDS -- V --9 [Pch] ID -- VGS IT15830 [Pch] --14.0V -10.0V --4. 0V VDS= --10V --8 --7 --5 .5 V Drain Current, ID -- A --4 --3.0V Drain Current, ID -- A --4 --6 --5 --4 --3 --3 --2 --6 . 0V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 --25 --2.5 --3.0 --1 Ta= °C --1 VGS= --2.5V 75 °C 25° --2 C --3.5 Drain-to-Source Voltage, VDS -- V IT15831 Gate-to-Source Voltage, VGS -- V IT15832 No. A1809-4/6 FW906 120 RDS(on) -- VGS [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 100 ID= --3A 80 --6A 80 60 60 = -VGS 40 40 20 20 A = --3 V, I D --4.5 = VGS 6A , I D= ---10.0V V GS= = --3 , ID 4.0V A 0 0 --2 --4 --6 --8 --10 --12 --14 --16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 | yfs | -- ID IT15833 2 --10 7 5 Ambient Temperature, Ta -- °C Forward Transfer Admittance, | yfs | -- S 2 10 5 3 2 1.0 7 5 3 2 0.1 --0.01 [Pch] VDS= --10V IS -- VSD IT15834 [Pch] VGS=0V Ta= 75°C °C -25 =Ta °C 25 °C 75 Source Current, IS -- A 7 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 --0.01 --0.2 --0.4 --0.6 --25° C --0.8 25°C --1.0 --1.2 IT15836 Drain Current, ID -- A 2 SW Time -- ID td(off) IT15835 Switching Time, SW Time -- ns 100 7 5 3 2 [Pch] VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Pch] f=1MHz 1000 7 5 3 2 tf Ciss 10 7 5 3 2 --0.1 2 3 5 7 --1.0 tr td(on) 100 7 2 3 5 7 --10 2 IT15837 5 0 --5 --10 Coss Crss --15 --20 --25 --30 IT15838 Drain Current, ID -- A --10 --9 VGS -- Qg Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 [Pch] ASO [Pch] Gate-to-Source Voltage, VGS -- V VDS= --15V ID= --6A Drain Current, ID -- A IDP= --52A (PW≤10μs) 10 10 0μ s μs --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --6A 10 10 ms 0m s 10 1m s DC s op era tio Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 1unit 5 7 --0.1 23 5 7--1.0 n --0.01 --0.01 2 3 23 5 7 --10 23 5 Total Gate Charge, Qg -- nC IT15839 Drain-to-Source Voltage, VDS -- V IT15840 No. A1809-5/6 FW906 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Allowable Power Dissipation(FET1), PD -- W 3.0 PD -- Ta [Nch/Pch] Allowable Power Dissipation, PD -- W 2.4 2.3 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 PD (FET1) -- PD (FET2) [Nch/Pch] When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.5 2.3 2.0 To t 1.5 al di 1u ss ip nit ati on 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Ambient Temperature, Ta -- °C IT15841 Allowable Power Dissipation(FET2), PD -- W IT15842 Note on usage : Since the FW906 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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