FW907

Ordering number : ENA1810 FW907 SANYO Semiconductors DATA SHEET FW907 Features • • • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications ON-resistance Nch: RDS(on)1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg Duty cycle≤1% Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Conditions N-channel 30 ±20 10 11.5 24 52 2.3 2.5 150 --55 to +150 P-channel --30 ±20 --8 --9 --19 --52 Unit V V A A A A W W °C °C Package Dimensions unit : mm (typ) 7005A-003 5.0 0.8 8 5 0.2 0.3 Product & Package Information • Package : SOP8 • JEITA, JEDEC : SC-87, SOT96 • Minimum Packing Quantity : 1,000 pcs./reel Packing Type : TL Marking 0.1 0.8 1 1.27 4 0.43 1.8 MAX 1.5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 W907 TL 6.0 4.4 LOT No. Electrical Connection 8 7 6 5 0.7 1 2 3 4 http://semicon.sanyo.com/en/network 72810PA TK IM TC-00002249 No. A1810-1/6 FW907 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--8A ID=--8A, VGS=--10V ID=--4A, VGS=--4.5V ID=--4A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--8A VDS=--15V, VGS=--10V, ID=--8A VDS=--15V, VGS=--10V, ID=--8A IS=--8A, VGS=0V --1.2 10 20 32 36 875 200 150 8.1 73 84 74 18 2.1 4.7 --0.82 --1.2 26 45 51 --30 --1 ±10 --2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V ID=5A, VGS=4.5V ID=5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=15V, VGS=10V, ID=10A VDS=15V, VGS=10V, ID=10A VDS=15V, VGS=10V, ID=10A IS=10A, VGS=0V 30 1 ±10 1.2 5.2 13 21 27 1000 170 100 12 75 57 44 17 3.6 3.0 0.85 1.2 17 30 38 2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit No. A1810-2/6 FW907 Switching Time Test Circuit [N-channel] 10V 0V VIN VDD=15V [P-channel] 0V --10V VIN VDD= --15V VIN PW=10μs D.C.≤1% G D ID=10A RL=1.5Ω VOUT PW=10μs D.C.≤1% VIN D ID= --8A RL=1.87Ω VOUT G P.G FW907 50Ω S P.G FW907 50Ω S 1 14.0V 0.0V 10 9 8 ID -- VDS 4.5V 4.0 V [Nch] 15 14 13 12 11 10 9 8 7 6 5 3 ID -- VGS VDS=10V [Nch] V Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 3.5V Drain Current, ID -- A 6.0 VGS=2.5V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 25°C 3.5 4.0 3.0V 2 Ta=7 5°C 4 --25°C 4.5 Drain-to-Source Voltage, VDS -- V 80 RDS(on) -- VGS IT15843 Gate-to-Source Voltage, VGS -- V 50 [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta IT15844 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 60 50 40 30 20 10 0 ID=5A 10A 40 30 20 =5A 4.0V, I D V GS= 5A , I D= 4.5V S= VG =10A V, I D =10.0 VGS 10 0 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT15845 Ambient Temperature, Ta -- °C IT15846 No. A1810-3/6 FW907 10 | yfs | -- ID VDS=10V [Nch] Forward Transfer Admittance, | yfs | -- S 7 5 3 2 10 7 5 3 2 IS -- VSD [Nch] VGS=0V 2 = Ta 1.0 7 5 3 2 0.1 0.01 --2 C 5° °C 75 Source Current, IS -- A 3 °C 25 3 2 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 0.2 0.4 Ta= 75° C 25° C --25 °C 0.6 0.8 1.0 7 5 1.0 1.2 IT15848 Drain Current, ID -- A 2 SW Time -- ID IT15847 [Nch] VDD=15V VGS=10V 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Nch] f=1MHz Switching Time, SW Time -- ns 100 7 5 td(off) Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss 3 2 tf Coss Crss td(on) 10 7 0.01 23 5 7 0.1 23 5 7 1.0 tr 100 7 23 5 7 10 2 3 5 0 5 10 15 20 25 30 IT15850 Drain Current, ID -- A 10 9 VGS -- Qg IT15849 Drain-to-Source Voltage, VDS -- V 100 7 5 3 2 [Nch] ASO Gate-to-Source Voltage, VGS -- V VDS=15V ID=10A Drain Current, ID -- A IDP=52A (PW≤10μs) 10 [Nch] 10 μs 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 IT15851 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=10A 10 m 0m s s 10 1m 0μ s s DC Operation in this area is limited by RDS(on). 10 op s era tio n 0.01 0.01 Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Total Gate Charge, Qg -- nC --8 ID -- VDS 5V --3 . Drain-to-Source Voltage, VDS -- V --12 --11 [Pch] ID -- VGS IT15852 [Pch] --14.0V --10.0V --7 --6 --5 --4 --3 --2 --4. 0 VDS= --10V V --3.0V Drain Current, ID -- A --10 --9 --8 --7 --6 --5 --4 Drain Current, ID -- A --6 . 0V --4 . 5V VGS= --2.5V --1 0 --1 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 --25 °C --2.5 --3.0 --2 Ta= 75° C --3 25° C --3.5 Drain-to-Source Voltage, VDS -- V IT15853 Gate-to-Source Voltage, VGS -- V IT15854 No. A1810-4/6 FW907 80 RDS(on) -- VGS [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 60 50 40 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 60 50 40 30 20 10 0 ID= --4A --8A = VGS 30 20 10 0 --60 = -, ID .0V --4 4A = -VGS = -, ID 4.5V 4A .0 = --10 VGS = --8A V, I D 0 --2 --4 --6 --8 --10 --12 --14 --16 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 | yfs | -- ID IT15855 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Ambient Temperature, Ta -- °C Forward Transfer Admittance, | yfs | -- S 2 10 5 3 2 1.0 7 5 3 2 0.1 --0.01 [Pch] VDS= --10V IS -- VSD IT15856 [Pch] VGS=0V Ta= 75°C 25°C 7 C 5° 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 --0.01 --0.2 --0.4 --0.6 --25° --0.8 C = Ta C 5° --2 °C 25 Source Current, IS -- A 7 --1.0 --1.2 IT15858 Drain Current, ID -- A 3 2 SW Time -- ID IT15857 [Pch] VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Pch] f=1MHz Switching Time, SW Time -- ns 100 7 5 3 2 td(off) tf 1000 7 5 3 2 Ciss tr 10 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 td(on) 100 7 0 --5 --10 Coss Crss --15 --20 --25 --30 IT15860 Drain Current, ID -- A --10 --9 VGS -- Qg IT15859 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 [Pch] ASO Gate-to-Source Voltage, VGS -- V VDS= --15V ID= --8A Drain Current, ID -- A IDP= --52A (PW≤10μs) 10 --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 IT15861 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --8A 10 1m ms 0m s 10 0μ [Pch] 10 μs s s DC 10 s op era tio Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 1unit 5 7 --0.1 23 5 7--1.0 n --0.01 --0.01 2 3 23 5 7 --10 23 5 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V IT15862 No. A1810-5/6 FW907 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Allowable Power Dissipation(FET1), PD -- W 3.0 PD -- Ta [Nch/Pch] Allowable Power Dissipation, PD -- W 2.4 2.3 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 PD (FET1) -- PD (FET2) [Nch/Pch] When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.5 2.3 2.0 To t 1.5 al di 1u ss ip nit ati on 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Ambient Temperature, Ta -- °C IT15863 Allowable Power Dissipation(FET2), PD -- W IT15864 Note on usage : Since the FW907 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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