FX506

Ordering number:EN4880 FX506 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features · Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX506 houses two chips, each being equivalent to the 2SD1803, in one package. · Matched pair characteristics. Package Dimensions unit:mm 2118 [FX506] 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on ceramic board (750mm2×0.8mm) 1unit Mounted on ceramic board (750mm2×0.8mm) Conditions Ratings 60 50 6 5 8 1 1.5 2 150 –55 to +150 Unit V V V A A A W W ˚C ˚C · Marking:506 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO (KOTO) BX-1391 No.4880-1/4 FX506 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 hFE(small/ large) fT Cob VCE(sat) VBE(sat) VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=4A VCE=2V, IC=500mA VCE=5V, IC=500mA VCB=10V, f=1MHz IC=3A, IB=150mA 60 50 6 50 500 20 140 35 0.8 180 40 220 0.95 400 1.3 MHz pF mV V V V V ns ns ns Conditions Ratings min typ max 1 1 400 Unit µA µA IC=3A, IB=150mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ V(BR)EBO ton tstg tf IE=10µA, IC=0 See sepcified Test Circuit See sepcified Test Circuit See sepcified Test Circuit No.4880-2/4 FX506 No.4880-3/4 FX506 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4880-4/4