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LB11980H

LB11980H

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    LB11980H - Monolithic Digital IC For VCR Capstan Three-Phase Brushless Motor Driver - Sanyo Semicon ...

  • 详情介绍
  • 数据手册
  • 价格&库存
LB11980H 数据手册
Ordering number : EN8798 Monolithic Digital IC LB11980H Overview For VCR Capstan Three-Phase Brushless Motor Driver LB11980H is a 3-phase brushless motor driver optimal for driving the VCR capstan motors. Features • 3-Phase full-wave current-linear drive system. • Torque ripple correction circuit built-in.(correction factor variable) • Current limiter circuit built in. • Output stage upper/lower over-saturation prevention circuit built in. (No external capacitor required) • FG amplifier built in. • Thermal shutdown circuit built in. Absolute Maximum Ratings at Ta = 25°C Parameter Maximum supply voltage Symbol VCC max VS max Maximum output current Allowable power dissipation IO max Pd max Mounted on a specified board * Independent IC Operating temperature Storage temperature Topr Tstg Conditions Ratings 7 25 1.3 1.81 0.77 -20 to +75 -55 to +150 Unit V V A W W °C °C * Mounted on a specified board: 114mm×71.1mm×1.6mm, glass epoxy board Allowable Operating Range at Ta = 25°C Parameter Supply voltage Symbol VS VCC Hall input amplitude GSENSE input range VHALL VGSENSE Between hall inputs With respect to the control system ground Conditions Ratings 5 to 24 4.5 to 5.5 ±30 to ±80 -0.20 to +0.20 Unit V V mVo-p V Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. D2706 MS IM B8-5775 No.8798-1/11 LB11980H Electrical Characteristics at Ta = 25°C, VCC = 5V, VS = 15V Ratings Parameter VCC supply current Output Output saturation voltage VOsat1 VOsat2 Output leakage current FR FR pin input threshold voltage FR pin input input bias current Control CTL pin input Input bias current CTL pin input motor current CTL pin control start voltage CTL pin control Gm Current limit LIM pin input current LIM pin motor current LIM current limit offset voltage LIM pin control Gm Hall amplifier Hall amplifier input offset voltage Hall amplifier input bias current Hall amplifier common-mode input voltage TRC Torque ripple correction ratio TRC For the high and low peaks in the Rf waveform when IO = 200mA (Rf = 0.5Ω, ADJ-OPEN) Note.2 ADJ pin voltage FG Amplifier FG amplifier input offset voltage FG amplifier input bias current FG amplifier output saturation voltage FG amplifier voltage gain FG amplifier common-mode input voltage Schmitt amplifier Duty ratio Upper side output saturation voltage Lower side output saturation voltage Hysteresis width FGS output pin pull-up resistance Saturation Saturation prevention circuit lower set voltage TSD TSD operating temperature T-TSD (Design target) Note.1 180 °C VO sat (DET) Voltage between each OUT and Rf with IO = 10mA, Rf = 0.5Ω, VCTL = VLIM = 5V 0.175 0.25 0.325 V DUTY Vsatu (SH) Vsatd (SH) Vhys RFGout Under specified conditions (RF = 39kΩ) Note 3 IO = -20µA IO = 100µA 32 46 4.7 49.0 4.8 0.2 60 50 51.0 % V V mV kΩ VG (FG) VCM (FG) For open loop at f = 10kHz 41.5 0.5 44.5 47.5 4.0 dB V VOFF (FG) Ib (FG) VOsat (FG) Sink side; With internal pull-up resistance load -8 -100 0.5 0.6 +8 mV nA V VADJ 2.37 2.50 2.63 V 13 % VOFF (HALL) Ib (HALL) VCM (HALL) 1.3 1.0 3.0 3.3 µA V -6 +6 mV Ilim Imlim Voff (LIM) Gm (lim) VLIM = 3V VLIM = 0V Rf = 0.5Ω, VCTL = 5V, IO ≥ 10mA Hall input logic fixed (U, V, W = H, H, L) Rf = 0.5Ω, VCTL = 5V Hall input logic fixed (U, V, W = H, H, L) 1.0 0.59 1.25 0.71 1.5 3 5 1.5 0.83 µA mA V A/V Ib (CTL) Imctl VCTL (ST) Gm (CTL) VCTL = 5V VCTL = 0V Rf = 0.5Ω, VLIM = 5V, IO ≥ 10mA Hall input logic fixed (U, V, W = H, H, L) Rf = 0.5Ω, ∆IO = 200mA Hall input logic fixed (U, V, W = H, H, L) 2.25 0.86 2.50 1.06 1.5 3 5 2.75 1.26 µA mA V A/V VFSR Ib (FSR) VFR = 3V 1.0 100 1.25 150 2 200 V µA IOleak IO = 500mA, Rf = 0.5Ω, sink+source VCTL = VLIM = 5V (With saturation prevention) IO = 1.0A, Rf = 0.5Ω, sink+source VCTL = VLIM = 5V (With saturation prevention) 2.1 2.6 2.6 3.5 1.0 V V mA Symbol ICC Conditions RL = ∞, VCTL = 0, VLIM = 0V (Quiescent) min typ 12 max 18 Unit mA Note 1. No measurements are made on the parameters with Note (Design target). No.8798-2/11 LB11980H Note 2. The torque ripple compensation ratio is determined as follows from the Rf voltage waveform. Vp Vb I II III IV V VI Each hall logic setting GND level 2* (Vp - Vb) Correnction ratio = Vp + Vb 100* (%) Note 3. Apply the sine wave of 1kHz, 20mVP-P under conditions with a sample circuit installed externally as shown above. Package Dimensions unit : mm (typ) 3233B 15.2 (6.2) 28 15 (4.9) 10.5 7.9 1 0.8 (0.8) 2.0 0.3 14 0.25 2.7 0.1 (2.25) 2.45max SANYO : HSOP28H(375mil) 2.0 Pd max - Ta 1.81 Allowable power dissipation, Pd max - W 1.8 1.6 1.4 1.2 1.0 0.77 0.8 0.6 0.4 0.2 0 -20 0 20 25 Mounted on a specified board (114mm×71.1mm×1.6mm glass epoxy) Independent IC 1.09 0.46 40 60 75 80 100 ILB01492 Ambient temperature, Ta - °C 0.65 HEAT SPREADER No.8798-3/11 LB11980H Pin Assignment WOUT NC NC RF GSENSE FR GND 1 2 3 4 5 6 7 28 27 26 25 24 23 22 VOUT UOUT NC NC RF ADJ VS FRAME GND LB11980H 8 9 10 11 12 13 14 21 20 19 18 17 16 15 FRAME GND FGINFGIN+ FGOUT FGS CTL LIM FC VCC HWHW+ HVHV+ HUHU+ Top view No.8798-4/11 LB11980H Block Diagram 12 FC Output stage VS UIN+ UINlogarithmic compression block U Hall input combination block U U-OUT Combined output ( linear matrix) Logarithmic inverse transformation V V-OUT VIN+ V VIN- WIN+ W WIN- W W-OUT Rf (PWR) Upper saturation prevention control gm Rf (SENSE) gm Drive distribution circuit & lower saturation prevention control Differential distribution and torque ripple correction block Control amplifier CTL Feedback amplifier ADJ Approx.1/2VCC LIMREF GSENSE LIM FR Forward/ reverse selection TSD FG amplifier FGIN+ FGIN- GND FGOUT FGS VCC Reference voltage Bandgap 1.25V No.8798-5/11 LB11980H Truth Table and Control Function Source → Sink 1 2 3 4 5 6 V→W W→V U→W W→U U→V V→U W→V V→W W→U U→W V→U U→V Hall input U H H H L L L V H L L L H H W L L H H H L FR H L H L H L H L H L H L Note: “H” in the FR column represents a voltage of 2.75V or more. “L” represents a voltage of 2.25V or less. (At VCC = 5V) Note: “H” under the Hall Input columns represents a state in which “+” has a potential which is higher by 0.01V or more than that of the “-” phase inputs. Conversely “L” represents a state in which “+” has a potential which is lower by 0.01V or more than that of the “-” phase inputs. Note: Since a 180° energized system is used as a drive system, other phases than the sink and source are not OFF. [Control Function & Current Limiter Function] C ontrol characteristics VLIM = 5V 1OUT 1OUT Current limiter characteristics VCTL = 5V Gm = 1.06A/Vtyp 2.50Vtyp V CTL 0 1 2 3 4 5 0 1 1.25Vtyp 2 3 Slope = 0.71A/Vtyp V LIM 4 No.8798-6/11 LB11980H Pin Functions Pin name FR GND FGIN (-) FGIN (+) FG-OUT CTL LIM Pin no 6 7 8 9 10 12 13 Forward/reverse select pin. This pin voltage determines forward/reverse. (Vth = 1.25V TYP at VCC = 5V) GND for others than the output transistor. Minimum potential of output transistor is at Rf pin. Input pin for the FG amplifier to be used with inverted input. A feedback resistor is connected between this pin and FG OUT. Non-inverted input pin for the FG amplifier to be used as differential input. No bias is applied internally. FG amplifier output pin. Resistive load provided internally. Speed control pin. Control is performed by means of constant current drive which is applied by current feedback from Rf. Gm = 1.06A/VTYP at Rf = 0.5Ω Current limiter function control pin. This pin voltage is capable of varying the output current linearly. Slope = 0.71A/VTYP at Rf = 0.5Ω FC UIN+, UINVIN+, VINWIN+, WINVCC VS ADJ 14 15, 16 17, 18 19, 20 21 22 23 Speed control loop’s frequency characteristics correction pin. U-phase Hall device input pin; logic “H” presents IN+>INV-phase Hall device input pin; logic “H” presents IN+>INW-phase Hall device input pin; logic “H” presents IN+>INPower supply pin for supplying power to all circuits expect output section in IC; this voltage must be stabilized so as to eliminate ripple and noise. Power supply pin for supplying power to output section in IC. Pin to be used to adjust the torque ripple correction factor externally. When adjusting the correction factor, apply voltage externally to the ADJ pin through a low impedance. Increasing the applied voltage decreases the correction factor; lowering the applied voltage increases the correction factor. The rate of change, when left open, ranges approximately from 0 to 2 times. (Approximately VCC/2 is set internally and the input impedance is approximately 5kΩ.) Rf (PWR) Rf (SNS) 24 4 Output current detection pins. Current feedback is provided to the control blocks by connecting Rf between the pins and GND. The operation of the lower over-saturation prevention circuit and torque ripple correction circuit depends on the pin voltage. In particular, since the oversaturation prevention level is set by the pin voltage, decreasing the Rf value extermely may cause the lower over-saturation prevention to work less efficiently in the large current region. The PWR pin and SENSE pin must be connected. FGS UOUT VOUT WOUT GSENSE 11 27 28 1 5 FG Schmidt amp output pin, that is pulled up with 4.7kΩ. U-phase output pin. V-phase output pin. W-phase output pin. GND sensing pin. By connecting this pin to GND in the vicinity of the Rf resistor side of the Rf included motor GND wiring, the influence that the GND common impedance exerts on Rf can be excluded. (Must not be left open.) (Built-in spark killer diode) Functions No.8798-7/11 LB11980H Each Input/Output Equivalent Circuit Pin No. 15 16 17 18 19 20 Pin name UIN (+) UIN (-) VIN (+) VIN (-) WIN (+) WIN (-) Input/Output equivalent circuit Each (+) input 200Ω 100µA 200Ω Each (-) input 27 28 1 22 24 4 UOUT VOUT WOUT VS Rf (POWER) Rf (SENSE) VS VCC 150µA Lower oversaturation prevention circuit block VCC 10 µ A 200Ω Rf (SENSE) VCC VCC 200µA max LIM 200Ω VCC 20 µ A VCC 10kΩ VCC Each OUT 200Ω 30kΩ Rf (POWER) 12 13 CTL LIM VCC 5k Ω 200Ω 100µA 200Ω 5k Ω VCC 200µA CTL 6 23 FR ADJ FR 200Ω 20kΩ 1.25V ADJ 6k Ω 10kΩ 500Ω 6k Ω 10kΩ Continued on next page. No.8798-8/11 10kΩ LB11980H Continued from preceding page. Pin No. 8 9 Pin name FGIN (-) FGIN (+) Input/output equivalent circuit VCC 5µ A FGIN (-) 300Ω FGIN (+) 10 14 FGOUT FC VCC VCC VCC 10kΩ 2k Ω FGOUT 300Ω 10kΩ FC VCC FGS 300Ω 11 FGS VCC VCC 4.7kΩ 10kΩ No.8798-9/11 LB11980H Sample Application Circuit 2 NC 3 NC 0.5Ω 4 RF 5 GSENSE 6 FR 7 GND UOUT 27 NC 26 NC 25 RF 24 ADJ 23 VS 22 0.1µF 0.1µF 15V 5V Hall element 1 WOUT VOUT 28 FRAME GND VCC 1µF 39kΩ MR 8 FGIN9 FGIN+ 10 FGOUT FGS pulse output Torque instruction voltage supply pin 12 CTL Current limiter setting voltage supply pin 13 LIM 0.1µF 14 FC 11 FGS FRAME GND VCC 21 HW- 20 HW+ 19 HV- 18 HV+ 17 HU- 16 HU+ 15 HSOP28H Top view Note) The constant shown in this example is only for reference and does not guarantee the characteristics. Connect a capacitor between power supply and GND and between Hall inputs as required. 2.5V 0.1µF No.8798-10/11 LB11980H Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No.8798-11/11
LB11980H
物料型号: - 型号:LB11980H

器件简介: - LB11980H是一款三相无刷电机驱动IC,适用于驱动VCR卡斯坦电机。

引脚分配: - FR(6号引脚):正反转选择引脚,电压决定正反转(Vth=1.25V,典型值,Vcc=5V)。 - GND(7号引脚):除输出晶体管外的其他GND。 - FGIN()(8号引脚):FG放大器的反相输入引脚。 - FGIN(+)(9号引脚):FG放大器的非反相输入引脚。 - FG-OUT(10号引脚):FG放大器输出引脚。 - CTL(12号引脚):速度控制引脚。 - FC(14号引脚):速度控制环的频率特性校正引脚。 - UIN+,UIN-, VIN+,VIN-, WIN+,WIN-:各相霍尔器件输入引脚。 - Vcc(21号引脚):除输出部分外所有电路的供电引脚。 - VS(22号引脚):输出部分的供电引脚。 - ADJ(23号引脚):调整扭矩波动校正因子的引脚。 - Rf(PWR), Rf(SNS)(24号引脚和4号引脚):输出电流检测引脚。 - FGS(11号引脚):FG Schmidt放大器输出引脚。 - UOUT, VOUT, WOUT:电机驱动输出引脚。 - GSENSE(5号引脚):GND感应引脚。

参数特性: - 最大供电电压:7V - 最大输出电流:1.3A - 允许功耗:1.81W(安装在指定板上),0.77W(独立IC) - 工作温度:-20至+75℃ - 存储温度:-55至+150℃

功能详解: - 三相全波电流线性驱动系统。 - 内置扭矩波动校正电路。 - 内置电流限制电路。 - 防止上下过饱和的输出阶段电路(无需外部电容)。 - 内置FG放大器。 - 内置热关闭电路。

应用信息: - 任何需要极高可靠性的应用,如生命维持系统、飞机控制系统等,都不应在未咨询三洋半导体代表的情况下使用。

封装信息: - 封装类型:HSOP28H(375mil) - 尺寸:2.45mm(最大值)x 2.7mm x 10.5mm
LB11980H 价格&库存

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