LB11988H

Ordering number : ENA0299A LB11988H Overview Monolithic Digital IC Fan Motor Driver The LB11988H is a motor driver IC optimal for driving the DC fan motors. Features • 3-Phase full-wave current-linear drive system. • Current limiter circuit built in. • Output stage upper/lower over-saturation prevention circuit built in. • Forward/backward rotation direction setting circuit built in. • FG amplifier built in. • Thermal shutdown circuit built in. Absolute Maximum Ratings at Ta = 25°C Parameter Maximum supply voltage Symbol VCC max VS max Maximum output current Allowable power dissipation Operating temperature range Storage temperature range IO max Pd max Topr Tstg Independent IC Conditions Ratings 24 24 1.3 0.8 -30 to +85 -55 to +150 Unit V V A W °C °C Allowable Operating Range at Ta = 25°C Parameter Supply voltage VS VCC Hall input amplitude VHALL Between hall inputs Symbol Conditions Ratings 5 to 22 7 to 22 ±30 to ±80 mVo-p Unit V Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. D2006 SY IM B8-5373 No.A0299-1/8 LB11988H Electrical Characteristics at Ta = 25°C, VCC = 12V, VS = 12V Parameter VCC supply current Output Output saturation voltage VOsat1 VOsat2 IO = 500mA, Rf = 0.5Ω, Sink+Source (with saturation prevention) IO = 1.0A, Rf = 0Ω, Sink+Source (with saturation prevention) Output leakage current Hall amplifier Input offset voltage Input bias current Common-mode input voltage FR Threshold voltage Input bias current Current limit LIM pin current limit level Saturation Saturation prevention circuit lower set voltage FG Amplifier Output “High” voltage Output “Low” voltage Hysteresis width TSD operating temperature Vfgoh(SH) Vfgol(SH) Vhys TTSD Design target value* 23 170 11.8 0.3 mV °C V VOsat(DET) RL = 560Ω (Y),Rf = 0.5Ω Voltage between each OUT and RF 0.28 V ILIM Rf = 0.5Ω, Hall input logic fixed (U, V, W = H, H, L) 1 A VFRTH Ib(FR) 4 -5 8 V μA Voff(HALL) Ib(HALL) Vcm(HALL) VIN, WIN 3 -6 1 +6 3 VCC-3 mV μA V IOleak 2.1 2.6 V 2.6 3.5 1.0 mA Symbol ICC RL = 560Ω (Y) Conditions min Ratings typ 15 max 24 mA unit *: T-TSD is not measured because it stands for design target. Package Dimensions unit : mm (typ) 3234B 15.2 (6.2) 28 15 HEAT SPREADER (4.9) 10.5 7.9 1 0.8 (0.8) 2.0 0.3 14 0.25 2.45 max 0.1 2.7 (2.25) SANYO : HSOP28HC(375mil) 0.65 No.A0299-2/8 LB11988H 1.0 Pd max - Ta Independent IC Allowable power dissipation, Pd max - W 0.8 0.8 0.6 0.42 0.4 0.2 0 -30 -10 10 30 50 70 90 ILB01757 Ambient temperature, Ta - °C Truth Table and Control Function Source → Sink U 1 V→W W→V U→W W→U U→V V→U W→V V→W W→U U→W V→U U→V H Hall Input V H W L H L H L L H L H L H H L L L H H L L H H H L L H L H L FR 2 3 4 5 Note: “H” in the FR column represents a voltage of 8V or more. “L” represents a voltage of 4V or less. (At VCC=12V) Note: “H” under the Hall Input columns represents a state in which “+” has a potential which is higher by 0.01V or more than that of the “-“ phase inputs. Conversely “L” represents a state in which “+” has a potential which is lower by 0.01V or more than that of the “-” phase inputs. Note: Since a 180° energized system is used as a drive system, other phases than the sink and source are not OFF. 6 No.A0299-3/8 LB11988H Pin Assignment VOUT 1 UOUT 2 NC 3 28 WOUT 27 26 NC NC NC NC 4 5 25 24 23 FGOUT NC FR GND RF VS 6 7 22 LB11988H VCC NC 8 9 21 NC FC 20 19 WIN- 10 WIN+ 11 VIN- 12 NC 13 NC 18 17 16 NC UIN+ UINVIN+ NC 14 15 Top view No.A0299-4/8 LB11988H Pin Functions Pin Name GND Pin No. 22 FRAME FGOUT 25 Input/Output Equivalent Circuit Pin Functions GND for others than the output transistor. Minimum potential of output transistor is at RF pin. FG amplifier output pin. Resistive load provided internally. VCC 10kΩ 5k Ω VCC 25 FGOUT FR 23 VCC 200μA Forward/Reverse switching pin. 200Ω FR 23 1/2VCC FC 20 VCC Frequency characteristics compensation pin for over-saturation prevention circuit loop. 10kΩ 20 FC UIN+, UIN- 17,16 Each (+) input 17 Each (-) input 16 U-phase Hall device input pin; logic “H” presents IN+>IN- VIN+, VIN- 15,12 15 11 200Ω 100μA 200Ω 12 10 V-phase Hall device input pin; logic “H” presents IN+>INW-phase Hall device input pin; logic “H” presents IN+>IN- WIN+,WIN- 11,10 VCC 8 Power supply pin for supplying power to all circuits expect output section in IC; this voltage must be stabilized so as to eliminate ripple and noise. Continued on next page. No.A0299-5/8 LB11988H Continued from preceding page. Pin Name UOUT VOUT WOUT RF Pin No. 2 1 28 6 Input/Output Equivalent Circuit Pin Functions U-phase output pin. V-phase output pin. W-phase output pin. (Built-in spark killer diode) 7 VS Each OUT 2 1 28 200Ω VCC 150μA Output current detection pin. Connecting Rf between this pin and GND activates current limiting circuit. Then the lower over-saturation prevention circuit is activated in accordance with this pin voltage. Since the over-saturation prevention level is set with this voltage, the lower over-saturation prevention effect may deteriorate in the high current range if the Rf value is reduced to an extremely low level. Power supply pin for supplying power to output section in IC. 6 VS 7 RF 30kΩ Lower oversaturation prevention circuit block No.A0299-6/8 0.1μF FC 20 7 VS Block Diagram VCC UIN+ 17 16 UINUOUT VOUT WOUT VIN+ 15 12 VIN- WIN+ 11 Hall input combination unit (linear matrix) Combined output logarithmic compression unit Logarithmic inverse transformation & differential distribution 2 1 28 0.1μF×3 10 WIN6 RF FR 23 Forward/Reverse switching 0.5Ω Differential distribution Feedback amplifier LIMREF Upper saturation prevention control Drive distribution circuit & lower saturation prevention control VCC Schmidt amplifier 5k Ω Current limitter TSD UIN+ UIN22 13.6kΩ FG amplifier 30kΩ 25 FGOUT GND LB11988H Bandgap 1.2V VCC 8 Reference voltage No.A0299-7/8 LB11988H Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No.A0299-8/8